SLVK262 February   2026 TPS7H5030-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. Introduction
  5. Single-Event Effects (SEE)
  6. Device and Test Board Information
  7. Irradiation Facility and Setup
  8. LETEFF and Range Calculation
  9. Test Setup and Procedures
  10. Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. Single-Event Transients (SET)
  12. Event Rate Calculations
  13. 10Summary
  14.   A References

Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results

During the SEB/SEGR characterization, the device was tested at room temperature of approximately 25°C. The device was tested under both the enabled and disabled mode. For the SEB-OFF mode the device was disabled using the EN-pin by forcing 0V (using CH # 1 of a E36311A Keysight PS). During the SEB/SEGR testing with the device enabled/disabled, not a single input current event was observed.

The species used for the SEB testing was 109Ag (TAMU) at 15MeV/nucleon and 109Ag (KSEE) at 19.5 MeV/nucleon. For both ions an angle of 0° was used to achieve a LETEFF of ≈ 48 MeV·cm2/mg (for more details refer to Table 5-1). The kinetic energy in the vacuum for 109Ag (TAMU) is 1.635GeV and 109Ag (KSEE) is 2.125GeV. Flux of ≈9.67 × 104 to 1.26 × 105 ions/cm2/s and a fluence of ≈107 ions/cm2 per run was used. Run duration to achieve this fluence was ≈2 minutes. 7 devices (U1-U6 were the same as used in SEL testing) were powered up and exposed to the heavy-ions using the maximum recommended bias conditions. No SEB/SEGR current events were observed during the 12 runs, indicating that the TPS7H5030-SEP is SEB/SEGR-free up to LETEFF = 48 MeV·cm2/mg and across the full electrical specifications.Table 8-4shows the SEB/SEGR test conditions and results.

Table 7-2 Summary of TPS7H5030-SEP SEB/SEGR Test Condition and Results
RUN #UNIT #

Facility

Device Type

IONLETEFF (MeV·cm2/mg)FLUX (ions/cm2/s)FLUENCE (ions/cm2)ENABLED STATUS

VIN/PVIN (V)

VLDO (V)

SEB EVENT?

7

1

KSEE

TPS7H5030-SEP

109Ag

49.1

9.89 x 104

1.00 x 107

EN

14

5

No

8

1

KSEETPS7H5030-SEP109Ag

49.1

1.03 x 105

1.00 x 107DIS

14

5

No

9

2

KSEETPS7H5030-SEP109Ag

49.1

1.10 x 105

1.00 x 107

EN

14

5

No

10

2

KSEETPS7H5030-SEP109Ag

49.1

1.13 x 105

1.00 x 107

DIS

14

5

No

11

3

KSEETPS7H5030-SEP109Ag

49.1

9.00 x 104

1.00 x 107

EN

14

5

No

12

3

KSEETPS7H5030-SEP109Ag

49.1

9.85 x 104

1.00 x 107

DIS

14

5

No

13

4

KSEETPS7H5030-SEP109Ag

49.1

8.50 x 104

1.00 x 107

EN

14

5

No

14

4

KSEETPS7H5030-SEP109Ag

49.1

9.85 x 104

1.00 x 107

DIS

14

5

No

15

5

TAMU

TPS7H5030-SEP109Ag

47.7

1.27 x 1051.00 x 107EN145No

16

5

TAMU

TPS7H5030-SEP109Ag47.7

1.62 x 105

1.00 x 107DIS145No

17

6

TAMU

TPS7H5030-SEP109Ag47.7

1.32 x 105

1.00 x 107EN145No

18

7

TAMU

TPS7H5030-SEP109Ag47.7

1.00 x 105

1.00 x 107DIS145No

Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report, the upper-bound cross-section (using a 95% confidence level) is calculated as:

σSEB ≤ 3.07x 10-8 cm2/device for LETEFF = 48 MeV·cm2/mg and T = 25°C.

 Current versus Time for Run # 7 of the TPS7H5030-SEP at T = 25°CFigure 7-2 Current versus Time for Run # 7 of the TPS7H5030-SEP at T = 25°C
 Current versus Time for Run # 8 of the TPS7H5030-SEP at T = 25°CFigure 7-3 Current versus Time for Run # 8 of the TPS7H5030-SEP at T = 25°C