SLVK225 August   2025 TPS7H5020-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. Introduction
  5. Single-Event Effects (SEE)
  6. Device and Test Board Information
  7. Irradiation Facility and Setup
  8. LETEFF and Range Calculation
  9. Test Setup and Procedures
  10. Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. Single-Event Transients (SET)
  12. Event Rate Calculations
  13. 10Summary
  14.   A References

Device and Test Board Information

The TPS7H5020-SEP is packaged in a 24-pin HTSSOP PWP plastic package as shown in Figure 3-1. A custom TPS7H5020-SEP evaluation module, designed for open-loop SEE testing was used to evaluate the performance and characteristics of the TPS7H5020-SEP under heavy ion radiation. The evaluation module is shown in Figure 3-2. The schematics are shown in Figure 3-2 and Figure 3-4.

 Photograph of Delidded TPS7H5020-SEP [Left] and Pinout Diagram [Right]Figure 3-1 Photograph of Delidded TPS7H5020-SEP [Left] and Pinout Diagram [Right]
Note: The package was delidded/decapped to reveal the die face for all heavy-ion testing.
 TPS7H5020-SEP Custom EVM Top ViewFigure 3-2 TPS7H5020-SEP Custom EVM Top View
 TPS7H5020-SEP EVM SchematicsFigure 3-3 TPS7H5020-SEP EVM Schematics
 TPS7H5020-SEP Custom EVM Auxiliary SchematicFigure 3-4 TPS7H5020-SEP Custom EVM Auxiliary Schematic