SLVK225 August   2025 TPS7H5020-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

8 Single-Event Transients (SET)

SETs are defined as heavy-ion-induced transient upsets on the GATE (OUTH and OUTL tied together) of the TPS7H5020-SEP.

Testing was performed at room temperature (no external temperature control applied). The heavy-ions species used for the SET testing was 109Ag (TAMU) at 15MeV/nucleon and 109Ag (KSEE) at 19.5MeV/nucleon (for more details refer to Table 5-1). Flux of ≈105 ions/(cm2×s) and a fluence of ≈107 ions/cm2 per run were used for the SET characterization discussed in this chapter.

Waveform size, sample rate, trigger type, value, and signal for all scopes used are presented on Table 8-1.

Table 8-1 Scope Settings

Scope Model

Trigger Signal

Trigger Type

Trigger Value

Record Length

Sample Rate
PXIe-5110

GATE

 Pulse-Width ± 20%

50k

 100MS/s

Open-Loop Configuration

The primary focus of SETs were heavy-ion-induced transient upsets on output signal GATE (OUTH and OUTL tied together). SET testing was done at room temperature at 109Ag (TAMU) and 109Ag (KSEE) which produced a LETEFF of ≈48MeV·cm2/mg. GATE was monitored using a NI PXIe-5110. During testing the scope was set to trigger if the signal exceeded |20%| from nominal using a pulse width trigger. During all SET testing, there was one type of transient recorded that was self-recoverable.

The SET results for 6 devices are shown below in Table 8-4. The transient signature on GATE is shown and the number of transients across the runs and voltages are shown. Since only this transient signature occurred there is high confidence that the TPS7H5020-SEP is SEFI free and the recorded transient signature does not show any overshoot indicating that the TPS7H5020-SEP is safe for GaN operations. Note that for all testing VLDO was programmed to be 5V.

The upper-bound cross-sections for all bias conditions are shown in Table 8-4.

Table 8-2 Summary of TPS7H5020-SEP Open-Loop SET Test Condition and Results
RUN # UNIT #

Facility

Device Type

Mode

VIN (V)

FSW (Hz)

 ION LETEFF (MeV·cm2/mg) FLUX (ions/(cm2×s)) FLUENCE (ions/cm2) # GATE ≥ |20%|

19

1

TAMU

TPS7H5020-SEP

Silicon

12

 500k

109Ag

47.7

9.88× 104

 1.00 × 107

20

20

2

 TAMU

TPS7H5020-SEP

Silicon

12

500k

 109Ag

47.7

 1.07 × 105 1.00 × 107

18

21

3

 TAMU

TPS7H5020-SEP

GaN

12

500k

109Ag

47.7

 1.21 × 105 1.00 × 107

68

22

4

 TAMU

TPS7H5020-SEP

GaN

12

 500k

109Ag

47.7

 1.22 × 105 1.00 × 107

55

23

5

KSEE

 TPS7H5020-SEP Silicon

12

500k

109Ag

49.1

9.70 × 104

 1.00 × 107

5

24

6

KSEE

 TPS7H5020-SEP GaN

12

500k

 109Ag

49.1

1.20 × 105

 1.00 × 107

44
TPS7H5020-SEP Silicon Mode GATE Pulse-Width Transient (Run #19)Figure 8-1 TPS7H5020-SEP Silicon Mode GATE Pulse-Width Transient (Run #19)
TPS7H5020-SEP Silicon Mode GATE Pulse-Width Deviation Histogram (Run #19) Figure 8-2 TPS7H5020-SEP Silicon Mode GATE Pulse-Width Deviation Histogram (Run #19)
TPS7H5020-SEP GaN Mode GATE Pulse-Width Transient (Run #21) Figure 8-3 TPS7H5020-SEP GaN Mode GATE Pulse-Width Transient (Run #21)
TPS7H5020-SEP GaN Mode GATE Pulse-Width Deviation Histogram (Run #21) Figure 8-4 TPS7H5020-SEP GaN Mode GATE Pulse-Width Deviation Histogram (Run #21)
Table 8-3 TPS7H5020-SEP SET Cross-Sections

LETEFF (MeV·cm2/mg)

Mode

Parameters

 VIN

(V)

Fluence (ions/cm2)

# Transients

Upper-Bound Cross-Section (cm2)

48

Silicon

500k

12

 3 × 107

43

1.93 × 10-6

GaN

500k

12

 3 × 107

167

6.48 × 10-6