SLVK174 September   2024 TPS7H1121-SP

 

  1.   1
  2.   TPS7H1121-SP Single-Event Effects (SEE)
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
    1. 3.1 Device and Test Board Information Continued
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A Total Ionizing Dose from SEE Experiments
  15.   B References

3 Device and Test Board Information

The TPS7H1121-SP is packaged in a 22-pin thermally-enhanced ceramic package as shown in Figure 3-1. The TPS7H1121EVM-CVAL evaluation module was used to evaluate the performance and characteristics of the TPS7H1121-SP under heavy ion radiation. The TPS7H1121EVM-CVAL (Evaluation Module) is shown in Figure 3-2. The EVM schematic is shown in Figure 3-3.

Photograph of Delidded TPS7H1121-SP [Left] and Pinout Diagram [Right]Figure 3-1 Photograph of Delidded TPS7H1121-SP [Left] and Pinout Diagram [Right]
Note: The package was delidded to reveal the die face for all heavy-ion testing.
TPS7H1121-SP EVM Top View Figure 3-2 TPS7H1121-SP EVM Top View