SLVK158 November   2023 TPS7H6003-SP

PRODUCTION DATA  

  1.   1
  2.   TPS7H6003-SP Single-Event Effects (SEE)
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

5 Depth, Range, and LETEFF Calculation

GUID-20230927-SS0I-CL3V-NRVK-8HPSDKRTXHPT-low.svg Figure 5-1 Generalized Cross-Section of the LBC7 Technology BEOL Stack on the TPS7H6003-SP (Left) and SEUSS 2020 Application Used to Determine Key Ion Parameters (Right)

The TPS7H6003-SP is fabricated in the TI Linear BiCMOS 250-nm process with a 4LM back-end-of-line (BEOL) stack. The total stack height from the surface of the passivation to the silicon surface is 9.8 μm based on nominal layer thickness as shown in Figure 5-1. Accounting for energy loss through the 1-mil thick Aramica beam port window, the 40-mm air gap, and the BEOL stack over the TPS7H6003-SP, the effective LET (LETEFF) at the surface of the silicon substrate and the depth was determined with the SEUSS 2020 Software (provided by the Texas A&M Cyclotron Institute and based on the latest SRIM-2013 [7] models). The results are shown in Ion LETEFF, Depth, and Range in SiliconIon LETEFF, Depth, and Range in SiliconIon LETEFF, Depth, and Range in Silicon.

Table 5-1 Ion LETEFF, Depth, and Range in Silicon
Ion TypeBeam Energy (MeV / nucleon)Angle of IncidenceDegrader Steps (Number)Degrader AngleRange in Silicon (µm)LETEFF (MeV × cm2/ mg)
109Ag1500095.148
141Pr15000100.865
165Ho1500097.275