SLVK154 September   2023 TPS7H2211-SEP

PRODUCTION DATA  

  1.   1
  2.   TPS7H2211-SEP Neutron Displacement Damage (NDD) Characterization
  3.   Trademarks
  4. 1Overview
  5. 2Test Procedures
  6. 3Facility
  7. 4Results
    1. 4.1 Data Sheet Electrical Parameters and Associated Tests
  8.   A Appendix: NDD Report Data

1 Overview

The TPS7H2211-SEP is a radiation-tolerant single channel eFuse (integrated FET load switch with additional features) that provides reverse current protection, overvoltage protection, and a configurable rise time to minimize inrush current (soft start). The device contains P-channel MOSFETs that operate over an input voltage range of 4.5 V to 14 V and supports a maximum continuous current of 3.5 A

The TPS7H2211-SEP is controlled by an on and off input (EN), which is capable of interfacing directly with low-voltage control signals. Overvoltage protection and soft start are programmable with few external components through the OVP and SS pins. The TPS7H2211-SEP is available in a ceramic and plastic package with an exposed thermal pad allowing for improved thermal performance. A standard microcircuit drawing (SMD) is available for the QML 5962R1822001VXC. A vendor item drawing (VID) is available for the -SEP variant, V62/23609.

Table 1-1 Overview Information
TI Part NumberTPS7H2211-SEP
VID NumberV62/23609
Device NamePTPS7H2211MDAPSEP
Device FunctionLoad switch
TechnologyLinear BiCMOS 7 (LBC7)
Assembly Lot Number / Lot Trace Code3113811 / 32AHRYK
Unbiased Quantity Tested9
Exposure FacilityVPT Rad
Neutron Fluence (1-MeV equivalent)1.0 × 1012, 5.0 × 1012, 1.0 × 1013 n/cm2
Irradiation TemperatureRoom temperature
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