SLVK145 august   2023 TPS7H2201-SEP

PRODUCTION DATA  

  1.   1
  2.   Single-Event Effects Test Report of the TPS7H2201-SEP eFuse
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-Up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
    1. 8.1 Single Event Transients
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

Abstract

The purpose of this study is to characterize the Single-Event-Effects (SEE) performance due to heavy-ion irradiation of the TPS7H2201-SEP. Heavy-ions with LETEFF (Effective Linear Energy Transfer) of 48 MeV·cm2/mg were used to irradiate 5 devices. A flux of ≈ 105 ions/(cm2·s) and fluence of ≈ 107 ions/cm2 per run were used for the characterization. The results demonstrated that the TPS7H2201-SEP is Single Event Latch-Up, Single-Event-Burnout/Single-Event-Gate-Rupture (EN = High)-free at T = 125°C and 25°C, respectively, using 109Ag across the full electrical specifications. The device is Single-Event-Burnout/Single-Event-Gate-Rupture (EN = Low)-free up to VIN = 7V. Not a single Transient was observed from VIN of 1.5 to 7 V at LEFEFF ≤ 48 MeV∙cm2/mg. Refer to the SET section for more details.