SLVAG00 January   2026 BZX84C15V

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2Zener Operation and Key Parameters
    1. 2.1 Operation
      1. 2.1.1 Device Operation Under Breakdown
    2. 2.2 Key Parameters
  6. 3Zener Diode Manufacturing Process
    1. 3.1 Manufacturing
      1. 3.1.1 Wafer Fabrication
      2. 3.1.2 Complete Manufacturing Flow
      3. 3.1.3 Process Control and Capability
  7. 4Why Choose TI Zener Diodes?
  8. 5Selecting the Correct Protection Diode
    1. 5.1 Zener Diode
    2. 5.2 ESD Diode
    3. 5.3 TVS Diode
  9. 6Typical Applications
    1. 6.1 Zener Diode
      1. 6.1.1 Voltage Regulation
      2. 6.1.2 MOSFET Gate Overvoltage Clamping
      3. 6.1.3 CAN Bus Overvoltage Protection
    2. 6.2 ESD Diode
    3. 6.3 TVS Diode
  10. 7Summary
  11. 8References

Abstract

In the expanding electronics industry, we see a growing need for discrete protection designs. Integrated circuit scaling to smaller geometries and rising system voltages that creep closer to absolute max ratings of pins create increased risks from transients and ESD strikes. In this case, discrete diodes allow hardware designers the freedom to place these transient suppressors close to the source of ESD or surge events and protect systems. To properly implement a protection scheme however, it is important to understand the various diodes and how each performs under a transient event. One of the most critical of these protection devices is the zener diode.

Zener diodes are the latest release of TI's growing protection devices portfolio. This article helps the reader understand the basic operation of a zener diode, how they can properly be used in circuit protection applications, and differentiate vs other protection designs. This document also explain why TI's zener diodes are making an impact in this market to solve key customer challenges.