SLAZ184P October   2012  – May 2021 MSP430F249 , MSP430F249-EP

 

  1. 1Functional Advisories
  2. 2Preprogrammed Software Advisories
  3. 3Debug Only Advisories
  4. 4Fixed by Compiler Advisories
  5. 5Nomenclature, Package Symbolization, and Revision Identification
    1. 5.1 Device Nomenclature
    2. 5.2 Package Markings
      1.      PM64
      2.      RGC64
    3. 5.3 Memory-Mapped Hardware Revision (TLV Structure)
  6. 6Advisory Descriptions
    1. 6.1  ADC25
    2. 6.2  BCL12
    3. 6.3  BCL13
    4. 6.4  BCL15
    5. 6.5  COMP2
    6. 6.6  CPU19
    7. 6.7  FLASH19
    8. 6.8  FLASH24
    9. 6.9  FLASH25
    10. 6.10 FLASH27
    11. 6.11 FLASH36
    12. 6.12 JTAG23
    13. 6.13 PORT11
    14. 6.14 PORT12
    15. 6.15 TA12
    16. 6.16 TA16
    17. 6.17 TA21
    18. 6.18 TAB22
    19. 6.19 TB2
    20. 6.20 TB16
    21. 6.21 TB24
    22. 6.22 USCI20
    23. 6.23 USCI21
    24. 6.24 USCI22
    25. 6.25 USCI23
    26. 6.26 USCI24
    27. 6.27 USCI25
    28. 6.28 USCI26
    29. 6.29 USCI28
    30. 6.30 USCI30
    31. 6.31 USCI34
    32. 6.32 USCI35
    33. 6.33 USCI40
    34. 6.34 XOSC5
    35. 6.35 XOSC6
    36. 6.36 XOSC8
  7. 7Revision History

6.11 FLASH36

FLASH Module

Category

Functional

Function

Flash content may degrade due to aborted page erases

Description

If a page erase is aborted by EEIEX, the flash page containing the last instruction before erase operation will start to degrade. This effect is incremental and, after repetitions, may lead to corrupted flash content.

Workaround

- Use the EEI (interrupted erasing) feature instead of EEIEX (abort erasing).
or
- A PSA checksum can be calculated over affected flash page using the marginal read mode (marginal 0). If PSA sum differs from expected PSA value the affected flash page has to be reprogrammed.
or
- Start flash erasing from RAM and limit system frequency to <1MHz (to ensure 6-us delay after EEIEX).  If the last instruction before erasing is located in RAM, flash cell degradation does not occur.