SFFSB64 June 2026 TPS2HC120-Q1
This section provides a failure mode analysis (FMA) for the pins of the TPS2HC120-Q1. The failure modes covered in this document include the typical pin-by-pin failure scenarios:
Table 4-2 through Table 4-5 also indicate how these pin conditions can affect the device as per the failure effects classification in Table 4-1.
| Class | Failure Effects |
|---|---|
| A | Potential device damage that affects functionality. |
| B | No device damage, but loss of functionality. |
| C | No device damage, but performance degradation. |
| D | No device damage, no impact to functionality or performance. |
Figure 4-1 shows the TPS2HC120-Q1 pin diagram. For a detailed description of the device pins, see the Pin Configuration and Functions section in the TPS2HC120-Q1 datasheet.
Following are the assumptions of use and the device configuration assumed for the pin FMA in this section:
| Pin Name | Pin No. | Description of Potential Failure Effects | Failure Effect Class |
|---|---|---|---|
| NC | 1 | There is no effect on the device. | D |
| EN1 | 2 | The FET of CH1 is turned off and an erroneous open-load fault reports for no-load conditions when the DIAG_EN pin is high. | B |
| EN1_AUX | 3 | There is no effect if EN1 is not also shorted to ground. | D |
| EN2_AUX | 4 | There is no effect if EN2 is not also shorted to ground. | D |
| EN2 | 5 | The FET of CH2 is turned off and an erroneous open-load fault reports for no-load conditions when the DIAG_EN pin is high. | B |
| DNC | 6 | There is no effect on the device. | D |
| SEL | 7 | The reported SNS current or fault status on the SNS pin is always of CH1 when the DIAG_EN pin is high. | B |
| DIAG_EN | 8 | The diagnostic features do not function, including current sense and fault reporting. | B |
| FLT | 9 | The reported fault status is potentially erroneous. | B |
| LPM | 10 | The reported LPM status is potentially erroneous. | B |
| SNS | 11 | The reported SNS current or fault status on the SNS pin is erroneous. | B |
| ILIM | 12 | The current limit is set per the shorted to ground setting of the ILIM pin of the device, as mentioned in the datasheet. | C |
| GND | 13 | Any GND network, connected for protection, is bypassed. | B |
| NC | 14 | There is no effect on the device. | D |
| VOUT2 | 15 | The current limit of the device engages, and thermal protection turns off the FET of CH2. | B |
| 16 | |||
| NC | 17 | There is no effect on the device. | D |
| 18 | |||
| 19 | |||
| VBB | 20 | The output stages are not powered, and the FET of both channels do not turn ON. | B |
| 21 | |||
| 22 | |||
| 23 | |||
| NC | 24 | There is no effect on the device. | D |
| 25 | |||
| 26 | |||
| VOUT1 | 27 | The current limit of the device engages, and thermal protection turns off the FET of CH1. | B |
| 28 |
| Pin Name | Pin No. | Description of Potential Failure Effects | Failure Effect Class |
|---|---|---|---|
| NC | 1 | There is no effect on the device. | D |
| EN1 | 2 | The FET of CH1 is turned off and an erroneous open-load fault reports for no-load conditions when the DIAG_EN pin is high (internal pulldown). | B |
| EN1_AUX | 3 | There is no effect if EN1 is also not open circuited. | D |
| EN2_AUX | 4 | There is no effect if EN2 is also not open circuited. | D |
| EN2 | 5 | The FET of CH2 is turned off and an erroneous open-load fault reports for no-load conditions when the DIAG_EN pin is high (internal pulldown). | B |
| DNC | 6 | The operation is as expected. | D |
| SEL | 7 | The reported SNS current or fault status on the SNS pin is always of CH1 when the DIAG_EN pin is high. (internal pulldown). | B |
| DIAG_EN | 8 | The diagnostic features do not function, including current sense and fault reporting (internal pulldown). | B |
| FLT | 9 | The fault condition is not reported. | B |
| LPM | 10 | The LPM condition is not reported. | B |
| SNS | 11 | The current sense and fault at the SNS pin are not reported. | B |
| ILIM | 12 | The current limit is set per the OPEN setting of the ILIM pin of the device, as mentioned in the datasheet. | C |
| GND | 13 | The loss of ground detection engages, and the device turns OFF. | B |
| NC | 14 | There is no effect on the device. | D |
| VOUT2 | 15 | During the ON state of the device, CH2 is disconnected. During the OFF state of the device, if the DIAG_EN pin is high, an open-load fault reports. | B |
| 16 | |||
| NC | 17 | There is no effect on the device. | D |
| 18 | |||
| 19 | |||
| VBB | 20 | The device is not powered and both the channels are kept OFF. | B |
| 21 | |||
| 22 | |||
| 23 | |||
| NC | 24 | There is no effect on the device. | D |
| 25 | |||
| 26 | |||
| VOUT1 | 27 | During the ON state of the device, CH1 is disconnected. During the OFF state of the device, if the DIAG_EN pin is high, an open-load fault reports. | B |
| 28 |
| Pin Name | Pin No. | Shorted to | Description of Potential Failure Effects | Failure Effect Class |
|---|---|---|---|---|
| NC | 1 | 2 (EN1) | There is no effect on the device. | D |
| EN1 | 2 | 3 (EN1_AUX) | There is no effect on the device. | D |
| EN1_AUX | 3 | 4 (EN2_AUX) | There is a loss of enable control for both channels and an erroneous fault is potentially reported at the SNS and FLT pins when the DIAG_EN pin is high. | B |
| EN2_AUX | 4 | 5 (EN2) | There is no effect on the device. | D |
| EN2 | 5 | 6 (DNC) | Channel control of CH2 and channel selection is affected. | B |
| DNC | 6 | 7 (SEL0) | Channel selection is affected. | B |
| SEL0 | 7 | 8 (DIAG_EN) | There is a loss of control of the DIAG_EN and SEL0 pins and the current and fault reporting of the SNS pin is erroneous. | B |
| DIAG_EN | 8 | 9 (FLT) | The reported fault status and fault reporting of the SNS pin are erroneous. | B |
| FLT | 9 | 10 (LPM) | The reported fault status and LPM status are erroneous. | B |
| LPM | 10 | 11 (SNS) | The reported LPM status and the SNS pin output are erroneous. | B |
| SNS | 11 | 12 (ILIM) | The current limit setting and the SNS pin output are erroneous. | B |
| ILIM | 12 | 13 (GND) | The current limit is set per the shorted to ground setting of the ILIM pin of the device, as mentioned in the datasheet. | C |
| GND | 13 | 14 (NC) | There is no effect on the device. | D |
| VOUT2 | 15, 16 | 17, 18, 19 (NC) | There is no effect on the device. | D |
| NC | 17, 18, 19 | 20, 21, 22, 23 (VBB) | There is no effect on the device. | D |
| VBB | 20, 21, 22, 23 | 24, 25, 26 (NC) | There is no effect on the device. | D |
| NC | 24, 25, 26 | 27, 28 (VOUT1) | There is no effect on the device. | D |
| Pin Name | Pin No. | Description of Potential Failure Effects | Failure Effect Class |
|---|---|---|---|
| NC | 1 | There is no effect on the device. | D |
| EN1 | 2 | If pin voltage exceeds the absolute maximum rating, device damage is possible due to voltage breakdown on the ESD circuit. | A |
| EN1_AUX | 3 | If pin voltage exceeds the absolute maximum rating, device damage is possible due to voltage breakdown on the ESD circuit. | A |
| EN2_AUX | 4 | If pin voltage exceeds the absolute maximum rating, device damage is possible due to voltage breakdown on the ESD circuit. | A |
| EN2 | 5 | If pin voltage exceeds the absolute maximum rating, device damage is possible due to voltage breakdown on the ESD circuit. | A |
| DNC | 6 | If pin voltage exceeds the absolute maximum rating, device damage is possible due to voltage breakdown on the ESD circuit. | A |
| SEL | 7 | If pin voltage exceeds the absolute maximum rating, device damage is possible due to voltage breakdown on the ESD circuit. | A |
| DIAG_EN | 8 | If pin voltage exceeds the absolute maximum rating, device damage is possible due to voltage breakdown on the ESD circuit. | A |
| FLT | 9 | If pin voltage exceeds the absolute maximum rating, device damage is possible due to voltage breakdown on the ESD circuit. | A |
| LPM | 10 | If pin voltage exceeds the absolute maximum rating, device damage is possible due to voltage breakdown on the ESD circuit. | A |
| SNS | 11 | If pin voltage exceeds the absolute maximum rating, device damage is possible due to voltage breakdown on the ESD circuit. | A |
| ILIM | 12 | If pin voltage exceeds the absolute maximum rating, device damage is possible due to voltage breakdown on the ESD circuit. | A |
| GND | 13 | The supply power is bypassed, and the device stays OFF. | B |
| NC | 14 | There is no effect on the device. | D |
| VOUT2 | 15 | The output of CH2 is pulled to the supply voltage. A short-to-battery detection triggers during the OFF state if the DIAG_EN pin is high. | B |
| 16 | |||
| NC | 17 | There is no effect on the device. | D |
| 18 | |||
| 19 | |||
| VBB | 20 | There is no effect on the device. | D |
| 21 | |||
| 22 | |||
| 23 | |||
| NC | 24 | There is no effect on the device. | D |
| 25 | |||
| 26 | |||
| VOUT1 | 27 | The output of CH1 is pulled to the supply voltage. A short-to-battery detection triggers during the OFF state if the DIAG_EN pin is high. | B |
| 28 |