SBOK102 July   2025 INA1H94-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1Overview
  5. 2SEE Mechanisms
  6. 3Irradiation Facilities and Telemetry
  7. 4Test Device and Test Board Information
    1. 4.1 Qualification Circuits and Boards
    2. 4.2 Characterization Devices and Test Board Schematics
  8. 5Results
    1. 5.1 SEL Qualification Results
    2. 5.2 SET Characterization Results: MSU FRIB Linac
    3. 5.3 Analysis
    4. 5.4 Weibull Fit
  9. 6Summary
  10.   A MSU Results Appendix
  11.   B Confidence Interval Calculations
  12.   C References

SEL Qualification Results

During SEL qualification, the device was heated using forced hot air, maintaining an IC temperature at 125°C. The temperature was monitored using a thermal camera. The species used for the SEL testing was a thulium (169Tm) ion with an angle-of-incidence of 0° and an air gap of 70mm, for an LETEFF = 75MeV-cm2/mg. A nominal flux of 105 ions / s-cm2 and fluence of 107 ions / cm2 were targeted for each run. A total of five different DUTs were used for this testing, together experiencing a cumulative total fluence of approximately 30 × 107 ions / cm2 with no failures observed.

An exhaustive summary of the conditions for the 3 SEL test runs performed is provided in Table 5-1. The run numbers listed are the actual run numbers from the testing session, and the flux, fluence, and dose in silicon for each run are pulled from the test session log provided by the MSU FRIB. Note that some runs, such as 13-15, from the session are excluded from the table because these runs were used to test other non-INA1H94-SP devices. Figure 5-2 and related figures show example plots of the supply currents versus time.

Table 5-1 INA1H94-SP SEL Testing Summary, 169Tm Ion, 125°C Die Temperature
Run #DUTV+ Supply

(V)

V- Supply

(V)

VCM| VDIFFInput

(V)

Mean Flux
(ions × cm2/mg)
Fluence
(Number ions)
Dose in Silicon
(rad)
1SEL1_12.5-2.5VDIFF11×1041×10712000
2SEL1_19-9VDIFF51×1049.24×10611085
3SEL1_19-9VDIFF51×1051×10712000
4SEL1_12.5-2.5VDIFF11×1051×10712000
5SEL2_12.5-2.5VCM101×1051×10712000
6SEL2_12.5-2.5VCM-22.51×1051×10712000
7SEL2_12.5-2.5VCM22.51×1051×10712000
8SEL2_19-9VCM101×1051×10712000
9SEL2_19-9VCM1501×1051×10712000
10SEL2_19-9VCM-1501×1051×10712000
11SEL2_112-12VCM1501×1051×10712000
12SEL2_112-12VCM-1501×1051×10712000
16SEL1_22.5-2.5VCM22.51×1051×10712000
17SEL1_22.5-2.5VCM-22.51×1051×10712000
18SEL1_29-9VCM-1501×1051×10712000
19SEL1_29-9VCM1501×1051×10712000
20SEL1_29-9VDIFF-7.51×1051×10712000
21SEL1_29-9VDIFF7.51×1051×10712000
22SEL1_22.5-2.5VDIFF11×1051×10712000
23SEL2_22.5-2.5VCM-22.51×1051×10712000
24SEL2_22.5-2.5VCM22.51×1051×10712000
25SEL2_29-9VCM1501×1051×10712000
26SEL2_29-9VCM-1501×1051×10712000
27SEL2_29-9VDIFF-7.51×1051×10712000
28SEL2_29-9VDIFF7.51×1051×10712000
29SEL2_22.5-2.5VDIFF11×1051×10712000
32SEL2_32.5-2.5VCM | VDIFF22.5 | 1V1×1051×10712000
33SEL2_32.5-2.5VCM | VDIFF-22.5 | -1V1×1051×10712000
34SEL2_39-9VCM | VDIFF-150 | 7.5V1×1051×10712000
35SEL2_39-9VCM | VDIFF150 | -7.5V1×1051×10712000
 Thermal Image During Set UpFigure 5-1 Thermal Image During Set Up

No SEL events were observed, which indicates that the INA1H94-SP is SEL-immune at LETEFF = 75MeV-cm2/ mg and T = 125°C.

σSEL ≤ 1.84 × 10–7 cm2 for LETEFF = 75MeV-cm2/ mg and T = 125°C.

 Current Versus Time (I Versus t) Data for V+ Current During SEL Run 4Figure 5-2 Current Versus Time (I Versus t) Data for V+ Current During SEL Run 4
 Current Versus Time (I Versus t) Data for IIN Current During SEL Run 4Figure 5-4 Current Versus Time (I Versus t) Data for IIN Current During SEL Run 4
 Current Versus Time (I Versus t) Data for V+ Current During SEL Run 2 (Zoom In)Figure 5-6 Current Versus Time (I Versus t) Data for V+ Current During SEL Run 2 (Zoom In)
 Current Versus Time (I Versus t) Data for V- Current During SEL Run 2 (Zoom In)Figure 5-8 Current Versus Time (I Versus t) Data for V- Current During SEL Run 2 (Zoom In)
 Current Versus Time (I Versus t) Data for IIN Current During SEL Run 2 (Zoom In)Figure 5-10 Current Versus Time (I Versus t) Data for IIN Current During SEL Run 2 (Zoom In)
 Current Versus Time (I Versus t) Data for V- Current During SEL Run 4Figure 5-3 Current Versus Time (I Versus t) Data for V- Current During SEL Run 4
 Current Versus Time (I Versus t) Data for V+ Current During SEL Run 2Figure 5-5 Current Versus Time (I Versus t) Data for V+ Current During SEL Run 2
 Current Versus Time (I Versus t) Data for V- Current During SEL Run 2Figure 5-7 Current Versus Time (I Versus t) Data for V- Current During SEL Run 2
 Current Versus Time (I Versus t) Data for IIN Current During SEL Run 2Figure 5-9 Current Versus Time (I Versus t) Data for IIN Current During SEL Run 2

An additional SMU SEL session was performed with 3 fresh devices. A summary of the conditions in test runs performed is provided in Table 5-2. On this session, devices were tested up to the absolute maximum supply of 24V without any failures observed.

Table 5-2 Second Session INA1H94-SP SEL Test Summary, 169Tm Ion, 125°C Die Temperature
Run #DUTV+ Supply

(V)

V- Supply

(V)

VCM| VDIFFInput

(V)

Mean Flux
(ions × cm2/mg)
Fluence
(Number ions)
Dose in Silicon
(rad)

24

C0

9

-9

VDIFF

2

1×105

1×107

11957

25

C0

12

-12

VDIFF

2

1×105

1×107

11957

26

C0

12

-12

VDIFF

2

1×105

2×107

23904

27

C0

12

-12

VDIFF

2

1×105

1×107

11957

28

C0

12

-12

VDIFF

2

1×105

1×107

11957

29

C0

12

-12

VDIFF

2

1×105

1×107

11957

30

C0

12

-12

VDIFF

2

1×105

1×107

11957

31

C1

9

-9

VDIFF

2

1×105

3×107

36484

32

C1

12

-12

VDIFF

2

1×105

2×107

23904

33

C2

12

-12

VDIFF

2

1×105

2×107

23904

34

C2

12

-12

VDIFF

2

1×105

3×107

36484

35

C2

12

-12

VDIFF

2

1×105

5×107

59978