SBOK092 December   2024 OPA4H199-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A Total Ionizing Dose from SEE Experiments
  15.   B References

3 Device and Test Board Information

The OPA4H199-SP is packaged in a 14-pin plastic SOT-23-THIN (DYY) package as shown in Figure 3-1. The AMP-PDK-EVM evaluation module (EVM) was used to evaluate the performance and characteristics of the OPA4H199-SP under heavy ion radiation. The OPA4H199-SP devices were decapsulated to reveal the bare die face for all heavy-ion testing. The device under test (DUT) was inserted into a socket into the AMP-PDK-EVM in order to test various units with the same EVM. Each device was configured in a buffer configuration. For more information about the AMP-PDK-EVM evaluation module, click here.

OPA4H199-SP Photograph of OPA4H199-SP Figure 3-1 Photograph of OPA4H199-SP
OPA4H199-SP AMP-PDK-EVM Evaluation Module Used for OPA4H199-SP SEE Testing Top View Figure 3-2 AMP-PDK-EVM Evaluation Module Used for OPA4H199-SP SEE Testing Top View
OPA4H199-SP AMP-PDK-EVM Socket Angled View Figure 3-3 AMP-PDK-EVM Socket Angled View
OPA4H199-SP AMP-PDK-EVM Board Figure 3-4 AMP-PDK-EVM Board