SBOK061 October   2022 SN54SLC8T245-SEP

 

  1.   SN54SLC8T245-SEP Single-Event Effects (SEE)
  2.   Trademarks
  3. 1Overview
  4. 2SEE Mechanisms
  5. 3Test Device and Test Board Information
  6. 4Irradiation Facility and Setup
  7. 5Results
    1. 5.1 Single Event Latchup (SEL) Results
    2. 5.2 Single Event Transient (SET) Results
    3. 5.3 Event Rate Calculations
  8. 6Summary
  9.   A References

A References

  1. M. Shoga and D. Binder, "Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp. 1714-1717.
  2. G. Bruguier and J. M. Palau, "Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2), Mar. 1996, pp. 522-532.
  3. TAMU Radiation Effects Facility website. https://cyclotron.tamu.edu/ref/
  4. "The Stopping and Range of Ions in Matter" (SRIM) software simulation tools website. www.srim.org/index.htm#SRIMMENU
  5. D. Kececioglu, “Reliability and Life Testing Handbook”, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp. 186-193.
  6. ISDE CRÈME-MC website.https://creme.isde.vanderbilt.edu/CREME-MC
  7. A. J. Tylka, J. H. Adams, P. R. Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec. 1997, pp. 2150-2160.
  8. A. J. Tylka, W. F. Dietrich, and P. R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp. 2140-2149.