SBOK049 November   2023 OPA4H014-SEP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Overview
  5. 2Test Procedures
  6. 3Facility
  7. 4Results
    1. 4.1 Input Bias Current Parametric Shift
    2. 4.2 Input Offset Voltage Parametric Shift
    3. 4.3 Other Parametric Shifts
  8. 5Summary of Results
  9.   A Test Results

5 Summary of Results

While there were no functional failures at any irradiation level, degradation of parameters was readily apparent for the device when exposed to neutron irradiation. This degradation significantly worsened as the dosage increased beyond 1 × 1012 n/cm2. The specifications most significantly affected were the input offset voltage and input bias current (and related input offset current). Some devices experienced parametric drift to levels in excess of the data sheet specifications for open-loop gain (at and above 5 × 1012 n/cm2). The data suggest that circuit designers seeking to use the OPA4H014-SEP must consider the possible effects of parametric drift of the IB, IOS, VOS, and AOL specifications when assessing circuits for fault-planning purposes.