SBOS343D Data sheet | 德州仪器 TI.com.cn

SBOS343D September 2007 – October 2015 VCA822

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

DGS|10
- MPDS035C
D|14
- MPDS177G

散热焊盘机械数据 (封装 | 引脚)

D|14
- QFND304D

订购信息

7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range, unless otherwise noted.⁽¹⁾

	MIN	MAX	UNIT
Power supply		±6.5	V
Internal power dissipation	See Thermal Information
Input voltage		±V_S	V
Lead temperature (soldering, 10 s)		260	°C
Junction temperature (T_J)		150	°C
Junction temperature (T_J), maximum continuous operation		140	°C
Storage temperature	–65	125	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
		Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500
		Machine model (MM)	±200

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
Operating voltage		7	10	12	V
Operating temperature		–40	25	85	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		VCA822		UNIT
		D [SOIC]	DGS [VSSOP]
		14 PINS	10 PINS
R_θJA	Junction-to-ambient thermal resistance	90.3	173.1	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	49.8	46.6	°C/W
R_θJB	Junction-to-board thermal resistance	44.9	94.3	°C/W
ψ_JT	Junction-to-top characterization parameter	13.8	2.2	°C/W
ψ_JB	Junction-to-board characterization parameter	44.6	92.7	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	n/a	n/a	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics: V_S = ±5 V

At A_VMAX = +10 V/V, R_F = 1 kΩ, R_G = 200 Ω, and R_L = 100 Ω, 25°C, unless otherwise noted.

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT	TEST LEVEL⁽³⁾
AC PERFORMANCE
	Small-signal bandwidth (SOIC-14 Package)	A_VMAX = +2V/V, V_O = 1 V_PP, V_G = 1 V			168		MHz	C
		A_VMAX = +10V/V, V_O = 1 V_PP, V_G = 1 V			150		MHz	C
		A_VMAX = +100V/V, V_O = 1 V_PP, V_G = 1 V			118		MHz	C
	Large-signal bandwidth	A_VMAX = +10V/V, V_O = 5V_PP, V_G = 1 V			137		MHz	C
	Gain control bandwidth	V_G = 0V_DC + 10 mV_PP	25°C⁽¹⁾	170	200		MHz	B
			0°C to 70°C⁽²⁾	170
			–40°C to +85°C⁽²⁾	165
	Bandwidth for 0.1dB flatness	A_VMAX = +10V/V, V_O = 1V_PP, V_G = 1 V			28		MHz	C
	Slew rate	A_VMAX = +10V/V, V_O = 5-V Step, V_G = 1 V	25°C⁽¹⁾	1500	1700		V/μs	B
			0°C to 70°C⁽²⁾	1500
			–40°C to +85°C⁽²⁾	1450
	Rise-and-fall time	A_VMAX = +10V/V, V_O = 5-V Step, V_G = 1 V	25°C⁽¹⁾		2.5	3.1	ns	B
			0°C to 70°C⁽²⁾			3.2
			–40°C to +85°C⁽²⁾			3.2
	Settling time to 0.01%	A_VMAX = +10V/V, V_O = 5V Step, V_G = 1 V			11		ns	C
	Harmonic distortion, 2nd-harmonic	V_O = 2V_PP, f = 20MHz, V_G = 1 V	25°C⁽¹⁾	–60	–62		dBc	B
			0°C to 70°C⁽²⁾	–60
			–40°C to +85°C⁽²⁾	–60
	Harmonic distortion, 3rd-harmonic	V_O = 2V_PP, f = 20MHz, V_G = 1 V	25°C⁽¹⁾	–66	–68		dBc	B
			0°C to 70°C⁽²⁾	–66
			–40°C to +85°C⁽²⁾	–66
	Input voltage noise	f > 100kHz, V_G = 1 V			8.2		nV/√Hz	C
	Input current noise	f > 100kHz, V_G = 1 V			2.6		pA/√Hz	C
GAIN CONTROL
	Absolute gain error	A_VMAX = +10V/V, V_G = 1 V	25°C⁽¹⁾		±0.1	±0.4	dB	A
			0°C to 70°C⁽²⁾			±0.5
			–40°C to +85°C⁽²⁾			±0.6
	Gain deviation	A_VMAX = +10V/V, 0 < V_G < 1 V	25°C⁽¹⁾		±0.05	±0.3	dB	A
			0°C to 70°C⁽²⁾			±0.34
			–40°C to +85°C⁽²⁾			±0.37
	Gain deviation	A_VMAX = +10V/V, –0.8 < V_G < 1 V	25°C⁽¹⁾		±1.06	±1.9	dB	A
			0°C to 70°C⁽²⁾			±2.1
			–40°C to +85°C⁽²⁾			±2.2
	Gain at V_G = –0.9V	Relative to maximum gain	25°C⁽¹⁾		–26	–24	dB	A
			0°C to 70°C⁽²⁾			–24
			–40°C to +85°C⁽²⁾			–23
	Gain control bias current	V_G = 0 V	25°C⁽¹⁾		22	30	μA	A
			0°C to 70°C⁽²⁾			35
			–40°C to +85°C⁽²⁾			37
	Average gain control bias current drift	V_G = 0 V	0°C to 70°C⁽²⁾			±100	nA/°C	B
	Average gain control bias current drift	V_G = 0 V	–40°C to +85°C⁽²⁾			±100	nA/°C	B
	Gain control input impedance				70 \|\| 1		kΩ \|\| pF	C
DC PERFORMANCE
	Input offset voltage	A_VMAX = +10V/V, V_CM = 0 V, V_G = 0 V	25°C⁽¹⁾		±4	±17	mV	A
			0°C to 70°C⁽²⁾			±17.8
			–40°C to +85°C⁽²⁾			±19
	Average input offset voltage drift	A_VMAX = +10V/V, V_CM = 0 V, V_G = 0 V	0°C to 70°C⁽²⁾			±30	μV/°C	B
	Average input offset voltage drift	A_VMAX = +10V/V, V_CM = 0 V, V_G = 0 V	–40°C to +85°C⁽²⁾			±30	μV/°C	B
	Input bias current	A_VMAX = +10V/V, V_CM = 0 V, V_G = 0 V	25°C⁽¹⁾		19	25	μA	A
			0°C to 70°C⁽²⁾			29
			–40°C to +85°C⁽²⁾			31
	Average input bias current drift	A_VMAX = +10V/V, V_CM = 0 V, V_G = 0 V	0°C to 70°C⁽²⁾			±90	nA/°C	B
	Average input bias current drift	A_VMAX = +10V/V, V_CM = 0 V, V_G = 0 V	–40°C to +85°C⁽²⁾			±90	nA/°C	B
	Input offset current	A_VMAX = +10V/V, V_CM = 0 V, V_G = 0 V	25°C⁽¹⁾		±0.5	±2.5	μA	A
			0°C to 70°C⁽²⁾			±3.2
			–40°C to +85°C⁽²⁾			±3.5
	Average input offset current drift	A_VMAX = +10V/V, V_CM = 0 V, V_G = 0 V	0°C to 70°C⁽²⁾			±16	nA/°C	B
	Average input offset current drift	A_VMAX = +10V/V, V_CM = 0 V, V_G = 0 V	–40°C to +85°C⁽²⁾			±16	nA/°C	B
I_{RG MAX}	Maximum current through gain resistance	25°C⁽¹⁾			±2.6	±2.55	mA	B
		0°C to 70°C⁽²⁾				±2.55
		–40°C to +85°C⁽²⁾				±2.5
INPUT
	Most positive input voltage	R_L = 100Ω	25°C⁽¹⁾	+1.6	+1.6		V	A
			0°C to 70°C⁽²⁾	+1.6
			–40°C to +85°C⁽²⁾	+1.6
	Most negative input voltage	R_L = 100Ω	25°C⁽¹⁾		–2.1	–2.1	V	A
			0°C to 70°C⁽²⁾			–2.1
			–40°C to +85°C⁽²⁾			–2.1
	Common-mode rejection ratio	V_CM = ±0.5V	25°C⁽¹⁾	65	80		dB	A
			0°C to 70°C⁽²⁾	60
			–40°C to +85°C⁽²⁾	60
	Input impedance, differential				0.5 \|\| 1		MΩ \|\| pF	C
	Input impedance, common-mode				0.5 \|\| 2		MΩ \|\| pF	C
OUTPUT
	Output voltage swing	R_L = 1kΩ	25°C⁽¹⁾	±3.8	±4.0		V	A
			0°C to 70°C⁽²⁾	±3.75
			–40°C to +85°C⁽²⁾	±3.7
		R_L = 100Ω	25°C⁽¹⁾	±3.7	±3.9		V	A
			0°C to 70°C⁽²⁾	±3.6
			–40°C to +85°C⁽²⁾	±3.5
	Output current	V_O = 0V, R_L = 5Ω	25°C⁽¹⁾	±140	±160		mA	A
			0°C to 70°C⁽²⁾	±130
			–40°C to +85°C⁽²⁾	±130
	Output impedance	A_VMAX = +10V/V, f > 100kHz, V_G = 1V			0.01		Ω	C
POWER SUPPLY
	Specified operating voltage				±5		V	C
	Minimum operating voltage				±3.5		V	C
	Maximum operating voltage	25°C⁽¹⁾					V	A
		0°C to 70°C⁽²⁾
		–40°C to +85°C⁽²⁾
	Maximum quiescent current	V_G = 0V	25°C⁽¹⁾		36	37	mA	A
			0°C to 70°C⁽²⁾			37.5
			–40°C to +85°C⁽²⁾			38
	Minimum quiescent current	V_G = 0V	25°C⁽¹⁾		36	34.5	mA	A
			0°C to 70°C⁽²⁾			34
			–40°C to +85°C⁽²⁾			33.5
–PSRR	Power-supply rejection ratio	V_G = +1V	25°C⁽¹⁾	–61	–68		dB	A
			0°C to 70°C⁽²⁾	–59
			–40°C to +85°C⁽²⁾	–58
THERMAL CHARACTERISTICS
	Specified operating range, D package				–40 to +85		°C	C
θ_JA	Junction-to-ambient Thermal resistance	MSOP-10 (DGS)			130		°C/W	C
θ_JA	Junction-to-ambient Thermal resistance	SOIC-14 (D)			80		°C/W	C

(1) Junction temperature = ambient for +25°C tested specifications.

(2) Junction temperature = ambient at low temperature limit; junction temperature = ambient +23°C at high temperature limit for over temperature specifications.

(3) Test levels: (A) 100% tested at 25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information.

7.6 Typical Characteristics: V_S = ±5 V, DC Parameters

At T_A = 25°C, R_L = 100 Ω, V_G = 1 V, and V_IN = single-ended input on +V_IN with –V_IN at ground, unless otherwise noted.

Figure 1. Maximum Differential Input Voltage vs R_G

Figure 3. Maximum Gain Adjust Range vs
Peak-to-Peak Output Voltage

Figure 5. Gain Error Band vs
Gain Control Voltage

Figure 2. Maximum Gain Adjust Range vs R_F

Figure 4. Gain Error Band vs
Gain Control Voltage

Figure 6. Gain Error Band vs
Gain Control Voltage

7.7 Typical Characteristics: V_S = ±5 V, DC and Power-Supply Parameters

At T_A = +25°C, R_L = 100 Ω, V_G = +1 V, and V_IN = single-ended input on +V_IN with –V_IN at ground, unless otherwise noted.

Figure 7. Recommended R_F vs A_VMAX

Figure 9. Supply Current vs Control Voltage
(A_VMAX = +10 V/V)

Figure 11. Typical DC Drift vs Temperature

Figure 8. Supply Current vs Control Voltage
(A_VMAX = +2 V/V)

Figure 10. Supply Current vs Control Voltage
(A_VMAX = +100 V/V)

7.8 Typical Characteristics: V_S = ±5 V, A_VMAX = +2 V/V

At T_A = +25°C, R_L = 100 Ω, R_F = 1.33 kΩ, R_G = 1.33 kΩ, V_G = +1 V, V_IN = single-ended input on +V_IN with –V_IN at ground, and SOIC-14 package, unless otherwise noted.

Figure 12. Large-Signal Frequency Response

Figure 14. Large-Signal Pulse Response

Figure 16. Gain Flatness, Deviation From Linear Phase

Figure 18. Harmonic Distortion vs Load Resistance

Figure 20. Harmonic Distortion vs
Gain Control Voltage

Figure 22. Two-Tone, Third-Order Intermodulation Intercept
vs Gain Control Voltage

Figure 24. Gain Control Pulse Response

Figure 26. Group Delay vs Gain Control Voltage

Figure 28. Recommended R_S vs Capacitive Load

Figure 30. Output Voltage Noise Density

Figure 13. Small-Signal Pulse Response

Figure 15. Composite Video dG/dP

Figure 17. Harmonic Distortion vs Frequency

Figure 19. Harmonic Distortion vs
Output Voltage

Figure 21. Two-Tone, Third-Order
Intermodulation Intercept

Figure 23. Gain Control Frequency Response

Figure 25. Fully-Attenuated Response

Figure 27. Group Delay vs Frequency

Figure 29. Frequency Response vs Capacitive Load

Figure 31. Input Current Noise Density

7.9 Typical Characteristics: V_S = ±5 V, A_VMAX = +10 V/V

At T_A = +25°C, R_L = 100 Ω, R_F = 1 kΩ, R_G = 200 Ω, V_G = +1 V, and V_IN = single-ended input on +V_IN with –V_IN at ground, unless otherwise noted.

Figure 32. Small-Signal Frequency Response

Figure 34. Small-Signal Pulse Response

Figure 33. Large-Signal Frequency Response

Figure 35. Large-Signal Pulse Response

Figure 36. Gain Flatness, Deviation From Linear Phase

Figure 38. Harmonic Distortion vs Frequency

Figure 40. Harmonic Distortion vs
Output Voltage

Figure 42. Two-Tone, Third-Order
Intermodulation Intercept

Figure 44. Gain vs Gain Control Voltage

Figure 46. Gain Control Pulse Response

Figure 48. Fully-Attenuated Response

Figure 50. Output Limited Overdrive Recovery

Figure 52. Group Delay vs Frequency

Figure 37. Output Voltage Noise Density

Figure 39. Harmonic Distortion vs Load Resistance

Figure 41. Harmonic Distortion vs
Gain Control Voltage

Figure 43. Two-Tone, Third-Order Intermodulation Intercept
vs Gain Control Voltage (f_IN = 20 MHz)

Figure 45. Gain Control Frequency Response

Figure 47. Output Voltage and Current Limitations

Figure 49. I_RG Limited Overdrive Recovery

Figure 51. Group Delay vs Gain Control Voltage

7.10 Typical Characteristics: V_S = ±5 V, A_VMAX = +100 V/V

At T_A = +25°C, R_L = 100 Ω, R_F = 845 Ω, R_G = 16.9 Ω, V_G = +1 V, V_IN = single-ended input on +V_IN with –V_IN at ground, and SOIC-14 package, unless otherwise noted.