ZHCSIB0H 数据表 | 德州仪器 TI.com.cn

ZHCSIB0H January 2005 – May 2018 TS3A5018

PRODUCTION DATA.

请参考 PDF 数据表获取器件具体的封装图。

Figure 1. r_on vs V_COM (V₊ = 3.3 V)

Figure 3. Leakage Current vs Temperature (V₊ = 3.6 V)

Figure 5. Charge Injection (Q_C) vs V_COM

Figure 7. t_ON and t_OFF vs Supply Voltage

Figure 9. Logic-Level Threshold vs V₊

Figure 11. OFF Isolation vs Frequency (V₊ = 1.8 V)

Figure 13. Crosstalk vs Frequency (V₊ = 1.8 V)

Figure 15. Total Harmonic Distortion vs Frequency

Figure 2. r_on vs V_COM (V₊ = 2.5 V)

Figure 4. Leakage Current vs Temperature (V₊ = 1.8 V)

Figure 6. Charge Injection (Q_C) vs V_COM(V₊ = 1.8 V)

Figure 8. t_ON and t_OFF vs Temperature (V₊ = 3.3 V)

Figure 10. Gain vs Frequency Bandwidth (V₊ = 3.3 V)

Figure 12. Crosstalk Adjacent vs Frequency (V₊ = 1.8 V)

Figure 14. OFF Isolation vs Frequency
(V₊ = 3.3 V)

Figure 16. Power-Supply Current vs Temperature
(V₊ = 3.3 V)