ZHCSRP2B February   2023  – December 2023 TPS7H3302-SEP , TPS7H3302-SP

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Device Options
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 VTT Sink and Source Regulator
      2. 7.3.2 Reference Input (VDDQSNS)
      3. 7.3.3 Reference Output (VTTREF)
      4. 7.3.4 EN Control (EN)
      5. 7.3.5 Power-Good Function (PGOOD)
      6. 7.3.6 VTT Current Protection
      7. 7.3.7 VIN UVLO Protection
      8. 7.3.8 Thermal Shutdown
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VDD Capacitor
        2. 8.2.2.2 VLDO Input Capacitor
        3. 8.2.2.3 VTT Output Capacitor
        4. 8.2.2.4 VTTSNS Connection
        5. 8.2.2.5 Low VDD Applications
        6. 8.2.2.6 S3 and Pseudo-S5 Support
        7. 8.2.2.7 Tracking Startup and Shutdown
        8. 8.2.2.8 Output Tolerance Consideration for VTT DIMM or Module Applications
        9. 8.2.2.9 LDO Design Guidelines
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
      3. 8.4.3 Thermal Considerations
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 术语表
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DAP|32
散热焊盘机械数据 (封装 | 引脚)
订购信息

Thermal Considerations

VTT current can flow in both source and sink directions. As the TPS7H3302 is a linear regulator, power is dissipated internal to the device. When the device is sourcing current, the voltage difference between VLDOIN and VTT times IO (IIO ) current becomes the power dissipation as shown in Equation 2.

Equation 2. GUID-0DCDA386-6F5F-4D6B-B1CA-31B285B8A01B-low.gif

In this case, if VLDOIN is connected to an alternative power supply lower than the VDDQ voltage, overall power loss can be reduced. For the sink phase, VTT voltage is applied across the internal LDO regulator and the power dissipation (PDISS_SNK) can be calculated by Equation 3.

Equation 3. GUID-7D3BDB8A-FEB9-446A-8E3A-50C1EF05BB6F-low.gif

Because the device does not sink and source current at the same time and the IO current may vary rapidly with time, the actual power dissipation should be the time average of the above dissipations over the thermal relaxation duration of the system. Another source of power consumption is the current used for the internal current control circuitry from the VDD supply and the VLDOIN supply. This can be estimated as 5 mW or less during normal operating conditions. This power must be effectively dissipated from the package.

The thermal performance of an LDO depends on the printed circuit board (PCB) layout.

To further improve the thermal performance of this device, using a larger than recommended thermal land as well as increasing the number of vias helps lower the thermal resistance from junction to heat slug.