SLVSK53A October   2025  – December 2025 TPS7E82

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagrams
    3. 6.3 Feature Description
      1. 6.3.1 Enable (EN)
      2. 6.3.2 Dropout Voltage
      3. 6.3.3 Undervoltage Lockout
      4. 6.3.4 Thermal Shutdown
      5. 6.3.5 Foldback Current Limit
      6. 6.3.6 Power Limit
      7. 6.3.7 Output Pulldown
    4. 6.4 Device Functional Modes
      1. 6.4.1 Device Functional Mode Comparison
      2. 6.4.2 Normal Operation
      3. 6.4.3 Dropout Operation
      4. 6.4.4 Disabled
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Adjustable Device Feedback Resistor Selection
      2. 7.1.2 Recommended Capacitor Types
      3. 7.1.3 Input and Output Capacitor Selection
      4. 7.1.4 Reverse Current
      5. 7.1.5 Feed-Forward Capacitor
      6. 7.1.6 Dropout Voltage
      7. 7.1.7 Estimating Junction Temperature
      8. 7.1.8 Power Dissipation (PD)
      9. 7.1.9 Power Dissipation Versus Ambient Temperature
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Choose Feedback Resistors
      3. 7.2.3 Power Supply Recommendations
      4. 7.2.4 Layout
        1. 7.2.4.1 Layout Guidelines
        2. 7.2.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
      2. 8.1.2 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

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6.3.4 Thermal Shutdown

The device contains a thermal shutdown protection circuit to disable the device when the junction temperature
(TJ) of the pass transistor rises to TSD+ (typical). Thermal shutdown hysteresis verifies that the device resets (turns on) when the temperature falls to TSD- (typical). Refer the Electrical Characteristics table for relevant TSD values.

The thermal time-constant of the semiconductor die is fairly short, thus the device can cycle on and off when thermal shutdown is reached until power dissipation is reduced. Power dissipation during startup can be high from large VIN – VOUT voltage drops across the device or from high inrush currents charging large output capacitors. Under some conditions, the thermal shutdown protection disables the device before startup completes.

For reliable operation, limit the junction temperature to the maximum listed in the Recommended Operating Conditions table. Operation above this maximum temperature causes the device to exceed the operational specifications. Although the internal protection circuitry of the device is designed to protect against thermal overload conditions, this circuitry is not intended to replace proper heat sinking. Continuously running the device into thermal shutdown or above the maximum recommended junction temperature reduces long-term reliability.