ZHCSJG2A March   2019  – September 2019 TPS7A78

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      半桥配置典型原理图
      2.      全桥配置典型原理图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Active Bridge Control
      2. 7.3.2 Full-Bridge (FB) and Half-Bridge (HB) Configurations
      3. 7.3.3 4:1 Switched-Capacitor Voltage Reduction
      4. 7.3.4 Undervoltage Lockout Circuits (VUVLO_SCIN) and (VUVLO_LDO_IN)
      5. 7.3.5 Dropout Voltage Regulation
      6. 7.3.6 Current Limit
      7. 7.3.7 Programmable Power-Fail Detection
      8. 7.3.8 Power-Good (PG) Detection
      9. 7.3.9 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Mode
      3. 7.4.3 Disabled Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Recommended Capacitor Types
      2. 8.1.2 Input and Output Capacitors Requirements
      3. 8.1.3 Startup Behavior
      4. 8.1.4 Load Transient
      5. 8.1.5 Standby Power and Output Efficiency
      6. 8.1.6 Reverse Current
      7. 8.1.7 Switched-Capacitor Stage Output Impedance
      8. 8.1.8 Power Dissipation (PD)
      9. 8.1.9 Estimating Junction Temperature
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Calculating the Cap-Drop Capacitor CS
          1. 8.2.2.1.1 CS Calculations for the Typical Design
        2. 8.2.2.2 Calculating the Surge Resistor RS
          1. 8.2.2.2.1 RS Calculations for the Typical Design
        3. 8.2.2.3 Checking for the Device Maximum ISHUNT Current
          1. 8.2.2.3.1 ISHUNT Calculations for the Typical Design
        4. 8.2.2.4 Calculating the Bulk Capacitor CSCIN
          1. 8.2.2.4.1 CSCIN Calculations for the Typical Design
        5. 8.2.2.5 Calculating the PFD Pin Resistor Dividers for a Power-Fail Detection
          1. 8.2.2.5.1 PFD Pin Resistor Divider Calculations for the Typical Design
        6. 8.2.2.6 Summary of the Typical Application Design Components
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 开发支持
        1. 11.1.1.1 评估模块
        2. 11.1.1.2 SIMPLIS 模型
      2. 11.1.2 器件命名规则
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.3.9 Thermal Shutdown

A thermal shutdown protection circuit is included to disable VLDO_OUT and to stop the switched-capacitor stage from switching when the junction temperature TJ of the pass-transistor rises to TSD(SHUTDOWN). Thermal shutdown hysteresis assures that the device resets, resumes normal operation, and that VLDO_OUT turns back on when TJ falls to TSD(RESET). Based on the thermal time constant of the die and the device startup time, the device output can cycle on and off until power dissipation is reduced and the junction temperature remains below TSD(RESET).

For reliable operation, limit the junction temperature to the maximum listed in the Recommended Operating Conditions table. Operating above this maximum temperature causes the device to exceed its operational specifications. Although the internal protection circuitry is designed to protect against thermal overload conditions, this circuitry is not intended to replace proper heat sinking. Continuously running the device into thermal shutdown or above the maximum recommended junction temperature reduces long-term reliability.