SBVS115D August   2008  – January 2015 TPS782

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Internal Current Limit
      2. 7.3.2 Active VOUT Pulldown
      3. 7.3.3 Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Operation
      3. 7.4.3 Disabled
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input and Output Capacitor Requirements
        2. 8.2.2.2 Dropout Voltage
        3. 8.2.2.3 Transient Response
        4. 8.2.2.4 Minimum Load
      3. 8.2.3 Application Curves
    3. 8.3 Do's and Don’ts
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Protection
    4. 10.4 Power Dissipation
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Evaluation Modules
        2. 11.1.1.2 Spice Models
      2. 11.1.2 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Voltage Input voltage range –0.3 6 V
Enable –0.3 VIN + 0.3 V
Output voltage range –0.3 VIN + 0.3 V
Current Maximum output current Internally limited A
Output short-circuit duration Indefinite
Total continuous power dissipation, PDISS See Thermal Information
Operating junction temperature, TJ –40 160 °C
Storage temperature, Tstg –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN Input voltage 2.2 5.5 V
VOUT Output voltage 1.8 4.2 V
VEN Enable voltage 0 VIN V
IOUT Output current 0 150 mA
TJ Junction temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) TPS782 UNIT
DRV DDC
6 PINS 5 PINS
RθJA Junction-to-ambient thermal resistance 65.9 193.0 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 87.3 40.1
RθJB Junction-to-board thermal resistance 35.4 34.3
ψJT Junction-to-top characterization parameter 1.7 0.9
ψJB Junction-to-board characterization parameter 35.8 34.1
RθJC(bot) Junction-to-case (bottom) thermal resistance 6.1 —
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

Over operating temperature range (TJ = –40°C to 125°C), VIN = VOUT(nom) + 0.5 V or 2.2 V, whichever is greater;
IOUT = 100 μA, VEN = VIN, COUT = 1.0 μF, fixed VOUT test conditions, unless otherwise noted. Typical values at TJ = 25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN Input voltage range 2.2 5.5 V
VOUT DC output accuracy Nominal TJ = 25°C –2% ±1% +2%
Over VIN, IOUT, temperature VOUT(nom) + 0.5 V ≤ VIN ≤ 5.5 V,
0 mA ≤ IOUT ≤ 150 mA		 –3% ±2% 3%
ΔVOUT(ΔVIN) Line regulation VOUT(nom) + 0.5 V ≤ VIN ≤ 5.5 V,
IOUT = 5 mA		 ±1%
ΔVOUT(ΔIOUT) Load regulation 0 mA ≤ IOUT ≤ 150 mA ±2%
VDO Dropout voltage(1) VIN = 95% VOUT(nom), IOUT = 150 mA 130 250 mV
ILIM Output current limit VOUT = 0.90 × VOUT(nom) 150 230 400 mA
IGND Ground pin current IOUT = 0 mA 0.42 1.3 μA
IOUT = 150 mA 8 μA
IEN EN pin current VEN = 5.5V 40 nA
ISHDN Shutdown current (IGND) VEN ≤ 0.4 V, 2.2 V ≤ VIN < 5.5 V,
TJ = –40°C to 100°C		 18 130 nA
PSRR Power-supply rejection ratio VIN = 4.3 V,
VOUT = 3.3 V,
IOUT = 150 mA		 f = 10 Hz 40 dB
f = 100 Hz 20 dB
f = 1 kHz 15 dB
Vn Output noise voltage BW = 100 Hz to 100 kHz, VIN = 3.2 V,
VOUT = 2.7 V, IOUT = 1 mA		 108 μVRMS
tSTR Startup time(2) COUT = 1.0 μF, VOUT = 10% VOUT(nom) to VOUT = 90% VOUT(nom) 500 μs
tSHDN Shutdown time(3) IOUT = 150 mA, COUT = 1.0 μF,
VOUT = 2.8 V,
VOUT = 90% VOUT(nom) to
VOUT = 10% VOUT(nom)		 500(4) μs
Tsd Thermal shutdown temperature Shutdown, temperature increasing 160 °C
Reset, temperature decreasing 140 °C
TJ Operating junction temperature –40 125 °C
(1) VDO is not measured for devices with VOUT(nom) ≤ 2.3 V because minimum VIN = 2.2 V.
(2) Time from VEN = 1.2 V to VOUT = 90% (VOUT(nom)).
(3) Time from VEN = 0.4 V to VOUT = 10% (VOUT(nom)).
(4) See Shutdown in the Feature Description section for more details.

6.6 Typical Characteristics

Over the operating temperature range of TJ = –40°C to 125°C, VIN = VOUT(nom) + 0.5 V or 2.2 V, whichever is greater; IOUT = 100 μA, VEN = VIN, COUT = 1 μF, and CIN = 1 μF, unless otherwise noted.
tc_line_reg_33v_5ma_bvs115.gif
Figure 1. Line Regulation, IOUT = 5 mA, TPS78227
tc_load_reg_33v_bvs115.gif
Figure 3. Load Regulation, VIN = 3.8 V, TPS78227
tc_vdo-tmp_220_bvs115.gif
Figure 5. Dropout Voltage vs Junction Temperature, VIN = 0.95 × VOUT(nom), TPS78227
tc_gnd-vin_33v_50ma_bvs115.gif
Figure 7. Ground Pin Current vs Input Voltage, IOUT = 50 mA, TPS78227
tc_cur_lim-vin_33v_bvs115.gif
Figure 9. Current Limit vs Input Voltage, VOUT = 95% VOUT(nom), TPS78227
tc_en_hyst-tmp_001_bvs115.gif
Figure 11. Enable Pin Hysteresis vs Junction Temperature, IOUT = 1 mA, TPS78227
tc_vout-tmp_33v_bvs115.gif
Figure 13. %ΔVOUT vs Junction Temperature, VIN = 3.7 V, TPS78227
tc_psrr-frq_001_bvs115.gif
Figure 15. Ripple Rejection vs Frequency, VIN = 4.2 V, VOUT = 2.7 V, COUT = 2.2 μF, TPS78227
tc_vout-enable_slow_bvs115.gif
Figure 17. Output Voltage vs Enable (Slow Ramp), TPS78233
tc_load_res_10ma_bvs115.gif
Figure 19. Load Transient Response, TPS78233
tc_enable-vout_delay_bvs115.gif
Figure 21. Enable Pin vs Output Voltage Delay, TPS78233
tc_line_reg_33v_150ma_bvs115.gif
Figure 2. Line Regulation, IOUT = 150 mA, TPS78227
tc_vdo-iout_220_bvs115.gif
Figure 4. Dropout Voltage vs Output Current, VIN = 0.95 × VOUT(nom), TPS78227
tc_ignd_vin_bvs115.gif
Figure 6. Ground Pin Current vs Input Voltage, IOUT = 0 mA, TPS78233
tc_line_reg_33v_150ma_bvs115.gif
Figure 8. Ground Pin Current vs Input Voltage, IOUT = 150 mA, TPS78227
tc_en-vin_220_33v_bvs115.gif
Figure 10. Enable Pin Current vs Input Voltage, IOUT = 100 μA, TPS78227
tc_vout-tmp_22v_bvs115.gif
Figure 12. %ΔVOUT vs Junction Temperature, VIN = 3.3 V, TPS78227
tc_noise-freq_bvs115.gif
Figure 14. Output Spectral Noise Density vs Frequency, CIN = 1 μF, COUT = 2.2 μF, VIN = 3.2 V, TPS78227
tc_vin_ramp-vout_bvs115.gif
Figure 16. Input Voltage Ramp vs Output Voltage, TPS78233
tc_vin-delay_bvs115.gif
Figure 18. Input Voltage vs Delay to Output, TPS78222
tc_enable-vout_bvs115.gif
Figure 20. Enable Pin vs Output Voltage Response and Output Current, TPS78233