SLVSB63A December   2011  – March 2016 TPS62231-Q1 , TPS622314-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 pPin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Undervoltage Lockout
      2. 7.3.2 Enable and Shutdown
      3. 7.3.3 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Soft Start
      2. 7.4.2 Power Save Mode
      3. 7.4.3 Forced PWM Mode
      4. 7.4.4 100% Duty-Cycle Low-Dropout Operation
      5. 7.4.5 Short-Circuit Protection
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Output Filter Design (Inductor and Output Capacitor)
        2. 8.2.2.2 Inductor Selection
        3. 8.2.2.3 Output Capacitor Selection
        4. 8.2.2.4 Input Capacitor Selection
        5. 8.2.2.5 Checking Loop Stability
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Related Links
    4. 11.4 Community Resource
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VI Voltage at VIN and SW pin(2) –0.3 7 V
Voltage at EN, MODE pin(2) –0.3 (VIN + 0.3) ≤7 V
Voltage at FB pin(2) –0.3 3.6 V
Peak output current internally limited A
Power dissipation Internally limited
TJ Maximum operating junction temperature –40 125 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 ±1000
Machine Model (MM) 200
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

operating ambient temperature TA = –40 to 105°C (unless otherwise noted)(1)
MIN NOM MAX UNIT
Supply voltage, VIN(4) 2.05 6 V
Effective output inductance 0.7 1 or 2.2 4.3 μH
Effective output capacitance 2 4.7 15 μF
Recommended minimum supply voltage VOUT ≤ (VIN – 1 V)(2) 500-mA maximum IOUT(3) 3 3.6 V
350-mA maximum IOUT(3) 2.5 2.7
VOUT ≤ 1.8 V 60-mA maximum output current(3) 2.05
Operating junction temperature, TJ –40 125 °C
Ambient temperature, TA –40 105 °C
(1) In applications where high power dissipation, poor package thermal resistance, or both are present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the part/package in the application (RθJA), as given by the following equation: TA(max) = TJ(max) – (RθJA × PD(max)).
(2) For a voltage difference between minimum VIN and VOUT of ≥ 1 V
(3) Typical value applies for TA = 25°C, maximum value applies for TA = 105°C with TJ ≤ 125°C, PCB layout needs to support proper thermal performance.
(4) The minimum required supply voltage for start-up is 2.05 V. The device is functional down to the falling UVLO (undervoltage lockout) threshold.

6.4 Thermal Information

THERMAL METRIC(1) TPS62231x-Q1 UNIT
DRY (SON)
6 PINS
RθJA Junction-to-ambient thermal resistance 294.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 166.5 °C/W
RθJB Junction-to-board thermal resistance 166.1 °C/W
ψJT Junction-to-top characterization parameter 27.3 °C/W
ψJB Junction-to-board characterization parameter 159.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

VIN = 3.6 V, VOUT = 1.8 V, EN = VIN, MODE = GND, TA = –40°C to 105°C(4), CIN = 2.2 μF, L = 2.2 μH, COUT = 4.7 μF, typical values are at TA = 25°C (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
VIN Input voltage range(5) 2.05 6 V
IQ Operating quiescent current IOUT = 0 mA. PFM mode enabled (MODE = 0)
device not switching		 22 40 μA
IOUT = 0 mA. PFM mode enabled (MODE = 0)
device switching, VIN = 3.6 V, VOUT = 1.2 V 		25 μA
IOUT = 0 mA. Switching with no load
(MODE/DATA = VIN), PWM operation,
VOUT = 1.8 V, L = 2.2 μH		 3 mA
ISD Shutdown current EN = GND(3) 0.1 1 μA
UVLO Undervoltage-lockout threshold Falling 1.8 1.9 V
Rising 1.9 2.05 V
ENABLE, MODE THRESHOLD
VIH TH Threshold for detecting high EN, MODE 2.05 V ≤ VIN ≤ 6 V , rising edge 0.8 1 V
VIL TH HYS Threshold for detecting low EN, MODE 2.05 V ≤ VIN ≤ 6 V , falling edge 0.4 0.6 V
IIN Input bias Current, EN, MODE EN, MODE = GND or VIN = 3.6 V 0.01 0.5 μA
POWER SWITCH
RDS(ON) High-side MOSFET on-resistance VIN = 3.6 V, TJmax = 105°C; RDS(ON) max value 600 850 mΩ
Low-side MOSFET on-resistance VIN = 3.6 V, TJmax = 105°C; RDS(ON) max value 350 480
ILIMF Forward current-limit MOSFET high side VIN = 3.6 V, open loop 690 850 1050 mA
Forward current-limit MOSFET low side VIN = 3.6 V, open loop 550 840 1220 mA
TSD Thermal shutdown Increasing junction temperature 150 °C
Thermal shutdown hysteresis Decreasing junction temperature 20 °C
CONTROLLER
tONmin Minimum on time VIN = 3.6 V, VOUT = 1.8 V, Mode = high, IOUT = 0 mA 135 ns
tOFFmin Minimum off time 40 ns
OUTPUT
VREF Internal reference voltage 0.70 V
VOUT Output voltage accuracy(1) VIN = 3.6 V, Mode = GND, device operating in PFM Mode, IOUT = 0 mA 0%
VIN = 3.6 V, MODE = VIN,
IOUT = 0 mA		 TA = 25°C –2% 2%
TA = –40°C to 105°C –2.5% 2.5%
DC output voltage load regulation PWM operation, Mode = VIN = 3.6 V, VOUT = 1.8 V 0.001 %/mA
DC output voltage line regulation IOUT = 0 mA, Mode = VIN, 2.05 V ≤ VIN ≤ 6 V 0 %/V
tStart Start-up time Time from active EN to VOUT = 1.8 V, VIN = 3.6 V,
10-Ω load 		100 μs
ILK_SW Leakage current into SW pin VIN = VOUT = VSW = 3.6 V, EN = GND(2) 0.1 0.5 μA
(1) VIN = VO + 1 V
(2) The internal resistor divider network is disconnected from FB pin.
(3) Shutdown current into VIN pin, includes internal leakage
(4) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the part/package in the application (RθJA), as given by the following equation: TA(max) = TJ(max) – (RθJA × PD(max)).
(5) The minimum required supply voltage for start-up is 2.05 V. The device is functional down to the falling UVLO (undervoltage lockout) threshold

6.6 Typical Characteristics

TPS62231-Q1 TPS622314-Q1 tc_q_cur_lvs941.gif Figure 1. Quiescent Current IQ vs Ambient Temperature (TA)
TPS62231-Q1 TPS622314-Q1 tc_pmos_lvs941.gif Figure 3. PMOS RDS(ON) vs Supply Voltage VIN and Ambient Temperature (TA)
TPS62231-Q1 TPS622314-Q1 tc_shut_cur_lvs941.gif Figure 2. Shutdown Current ISD vs Ambient Temperature (TA)
TPS62231-Q1 TPS622314-Q1 tc_nmos_lvs941.gif Figure 4. NMOS RDS(ON) vs Supply Voltage VIN and Ambient Temperature (TA)