ZHCSMB6E March   2010  – October 2020 TPS62065 , TPS62067

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Mode Selection (TPS62065)
      2. 8.3.2 Power Good Output (TPS62067)
      3. 8.3.3 Enable
      4. 8.3.4 Clock Dithering
      5. 8.3.5 Undervoltage Lockout
      6. 8.3.6 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Soft Start
      2. 8.4.2 Power Save Mode
      3. 8.4.3 Dynamic Voltage Positioning
      4. 8.4.4 100% Duty Cycle Low Dropout Operation
      5. 8.4.5 Internal Current Limit and Fold-Back Current Limit for Short Circuit Protection
      6. 8.4.6 Output Capacitor Discharge
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Output Voltage Setting
        2. 9.2.2.2 Output Filter Design (Inductor and Output Capacitor)
          1. 9.2.2.2.1 Inductor Selection
          2. 9.2.2.2.2 Output Capacitor Selection
          3. 9.2.2.2.3 Input Capacitor Selection
        3. 9.2.2.3 Checking Loop Stability
      3. 9.2.3 Application Curves
    3. 9.3 System Example
      1. 9.3.1 TPS62067 Adjustable 1.8-V Output
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Related Links
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics

TJ = -40°C to 125°C, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for condition VIN = EN = 3.6 V. External components CIN = 10 μF 0603, COUT = 10 μF 0603, L = 1 μH, see the parameter measurement information.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
SUPPLY
VINInput voltage range2.96V
IQOperating quiescent currentIOUT = 0 mA, device operating in PFM mode
and device not switching
18μA
ISDShutdown currentEN = GND, current into AVIN and PVIN(1)0.11μA
VUVLOUndervoltage lockout thresholdFalling1.731.781.83V
Rising1.91.951.99
ENABLE, MODE
VIHHigh level input voltage2.9 V ≤ VIN ≤ 6 V16V
VILLow level input voltage2.9 V ≤ VIN ≤ 6 V00.4V
IINInput bias currentEN, mode tied to GND or AVIN(1)0.011μA
POWER GOOD OPEN-DRAIN OUTPUT
VTHPGPower good threshold voltageRising feedback voltage93%95%98%
Falling feedback voltage87%90%92%
VOLOutput low voltageIOUT = –1mA; must be limited by external pullup resistor (1)0.3V
VHOutput high voltageVoltage applied to PG pin through external pullup resistorVINV
ILKGLeakage current into PG pinV(PG) = 3.6V(1)100nA
tPGDLInternal power good delay time5µs
POWER SWITCH
RDS(on)High-side MOSFET on-resistanceVIN = 3.6 V (1)120180mΩ
VIN = 5 V(1)95150
RDS(on)Low-side MOSFET on-resistanceVIN = 3.6 V(1)90130
VIN = 5 V(1)75100
ILIMFForward current limit MOSFET high-side and low-side2.9 V ≤ VIN ≤ 6 V230027503300mA
TSDThermal shutdownIncreasing junction temperature150°C
Thermal shutdown hysteresisDecreasing junction temperature10
OSCILLATOR
fSWOscillator frequency2.9 V ≤ VIN ≤ 6 V2.633.4MHz
OUTPUT
VrefReference voltage600mV
VFB(PWM)Feedback voltage PWM modePWM operation, MODE = VIN ,
2.9 V ≤ VIN  ≤ 6 V, 0 mA load
–1.5%0%1.5%
VFB(PFM)Feedback voltage PFM mode, voltage positioningdevice in PFM mode, voltage positioning active(2)1%
VFBLoad regulation–0.5%/A
Line regulation0%/V
R(Discharge)Internal discharge resistorActivated with EN = GND, 2.9 V ≤ VIN ≤ 6 V,
0.8 ≤ VOUT ≤ 3.6 V
752001450Ω
tSTARTStart-up timeTime from active EN to reach 95% of VOUT500μs
Maximum value applies for TJ = 85°C
In PFM mode, the internal reference voltage is set to typ. 1.01 × Vref. See the parameter measurement information.