SLVS465C December   2003  – February 2016 TPS61043

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Operation
      2. 8.3.2 Boost Converter
      3. 8.3.3 Peak Current Control (Boost Converter)
      4. 8.3.4 Softstart
      5. 8.3.5 Control (CTRL)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Overvoltage Protection (OVP)
      2. 8.4.2 Undervoltage Lockout
      3. 8.4.3 Thermal Shutdown
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Efficiency
      2. 9.1.2 Setting the LED Current
      3. 9.1.3 Analog Control Signal for Brightness Control
      4. 9.1.4 PWM Control With Separate Enable
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Inductor Selection, Maximum Load Current, and Switching Frequency
        2. 9.2.2.2 Output Capacitor Selection and Line Regulation
        3. 9.2.2.3 Input Capacitor Selection
        4. 9.2.2.4 Diode Selection
      3. 9.2.3 Application Curves
    3. 9.3 System Examples
      1. 9.3.1 TPS61043 With 1-mm Total System Height
      2. 9.3.2 TPS61043 With Low LED Ripple Current and Higher Accuracy Using a 4.7-µF Output Capacitor
      3. 9.3.3 TPS61043 Powering 3 LEDs
      4. 9.3.4 Adjustable Brightness Control Using an Analog Voltage
      5. 9.3.5 Alternative Adjustable Brightness Control Using PWM Signal
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DRB|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply Voltages, v(VIN) (2) –0.3 7 V
Voltages, V(Rs), V(CTRL), V(FB) –0.3 Vin + 0.3 V
Voltages, V(SW), V(LED) (2) 30 V
Voltage, V(OVP) 30 V
Operating junction temperature –40 150 °C
Lead temperature (soldering, 10 sec) 260 260 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VI Input voltage 1.8 6 V
TA Operating ambient temperature –40 85 °C
TJ Operating junction temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) TPS61043 UNIT
DRB (VSON)
8 PINS
RθJA Junction-to-ambient thermal resistance 48.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 66.9 °C/W
RθJB Junction-to-board thermal resistance 23.8 °C/W
ψJT Junction-to-top characterization parameter 1.5 °C/W
ψJB Junction-to-board characterization parameter 23.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 5.2 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

VI = 3.6 V, CTRL= VI, TA = –40°C to + 85°C, typical values are at TA= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
VI Input voltage range 1.8 6 V
I(Q) Operating quiescent current into VIN IO = 0 mA, not switching 38 65 µA
IO(sd) Shutdown current CTRL = GND 0.1 1 µA
VUVLO Under-voltage lockout threshold VI falling 1.5 1.7 V
CTRL
VIH CTRL high level input voltage 1.3 V
VIL CTRL low level input voltage 0.3 V
IIkg CTRL input leakage current CTRL = GND or VIN 0.1 µA
ton Minimim CTRL pulse witdh to enable CTRL = low to high 500 us
toff Minimum CTRL pulse width to disable CTRL = high to low 10 32 ms
f(CTRL) PWM switching frequency applied to CTRL 0.1 50 kHz
D(CTRL) PWM duty cycle applied to CTRL 1% 100%
POWER SWITCH AND CURRENT LIMIT (SW)
VS Maximum switch voltage 30 V
rds(ON) MOSFET ON-resistance V I = 3.6 V; I(SW) = 200 mA 300 600 mΩ
Ilkg MOSFET leakage current V(SW) = 28 V 0.1 10 µA
ILIM MOFSET current limit 320 400 480 mA
TON Power switch maximum on-time VO = 15 V 4.5 µs
TOFF Power switch minimum off-time 400 ns
LED SWITCH AND CURRENT LIMIT (LED)
VS Maximum switch voltage 30 V
I (LED) Maximum LED switch current 60 mA
rds(ON) MOSFET ON-resistance VI = 3.6 V; ISW = 20 mA 1 2 Ω
Ilkg MOSFET leakage current V(LED)= 28 V 0.1 10 µA
OUTPUT
VO Output voltage range OVP connected VI 16.9 V
I(FB) Feedback input bias current(1) V(FB) = 0.252 V 100 nA
VFB Feedback trip point voltage 1.8 V ≤ VI ≤ 6.0 V 244 252 260 mV
V(OVP) Output overvoltage protection VO rising 17 18 19 V
Vhys(OVP) Output overvoltage protection hysteresis 3.65 V
I(OVP) OVP input current VO = 15 V 17 23 µA
(1) The feedback input is high-impedance MOSFET Gate input.

6.6 Typical Characteristics

Table 1. Table of Graphs

FIGURE
V(FB) Feedback voltage vs Temperature Figure 1
I(FB) Feedback current vs Temperature Figure 2
rds(on) Main switch Q1 vs Temperature Figure 3
vs Input voltage Figure 4
LED switch Q2 vs Temperature Figure 5
vs Input voltage Figure 6
ILED Average LED current vs PWM duty cycle on CTRL pin Figure 7
TPS61043 Fbvvstemp_lvs441.gif Figure 1. Feedback Voltage vs Temperature
TPS61043 inv2_lvs465.gif Figure 3. rds(on) Main Switch (Q1) vs Temperature
TPS61043 Rdsq2temp_lvs441.gif Figure 5. rds(on) LED Switch (Q2) vs Temperature
TPS61043 Iledvspwm_lvs441.gif Figure 7. Average LED Current vs PWM Duty Cycle on CTRL Pin
TPS61043 Fbcvstemp_lvs441.gif Figure 2. Feedback Current vs Temperature
TPS61043 inv1_lvs465.gif Figure 4. rds(ON) Main Switch (Q1) vs Input Voltage
TPS61043 Rdsq2involt_lvs441.gif Figure 6. rds(on) LED Switch (Q2) vs Input Voltage