ZHCSDR7 May   2015 TPS54334

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 简化电路原理图
  5. 5 修订历史记录
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Fixed Frequency PWM Control
      2. 8.3.2  Light Load Operation
      3. 8.3.3  Slope Compensation and Output Current
      4. 8.3.4  Bootstrap Voltage (BOOT) and Low Dropout Operation
      5. 8.3.5  Error Amplifier
      6. 8.3.6  Voltage Reference
      7. 8.3.7  Adjusting the Output Voltage
      8. 8.3.8  Enable and Undervoltage Lockout
      9. 8.3.9  Slow Start
      10. 8.3.10 Safe Start-up into Pre-Biased Outputs
      11. 8.3.11 Power Good (PGOOD)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Overcurrent/Overvoltage/Thermal Protection
      2. 8.4.2 Thermal Shutdown
      3. 8.4.3 Small Signal Model for Loop Response
      4. 8.4.4 Small Signal Model for Peak Current Mode Control
      5. 8.4.5 Small Signal Model for Frequency Compensation
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 TPS54334 Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Switching Frequency
          2. 9.2.1.2.2 Output Voltage Set Point
          3. 9.2.1.2.3 Undervoltage Lockout Set Point
          4. 9.2.1.2.4 Input Capacitors
          5. 9.2.1.2.5 Output Filter Components
            1. 9.2.1.2.5.1 Inductor Selection
            2. 9.2.1.2.5.2 Capacitor Selection
          6. 9.2.1.2.6 Compensation Components
          7. 9.2.1.2.7 Bootstrap Capacitor
          8. 9.2.1.2.8 Power Dissipation Estimate
        3. 9.2.1.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 开发支持
    2. 12.2 文档支持
      1. 12.2.1 相关文档　
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 术语表
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)(2)
MIN MAX UNIT
Input Voltage VIN –0.3 30 V
EN –0.3 6 V
BOOT –0.3 (SW+7.5) V
VSENSE –0.3 3 V
COMP –0.3 3 V
PGOOD –0.3 6 V
Output Voltage BOOT-SW 0 7.5 V
SW –1 30 V
SW 10ns Transient –3.5 30 V
Vdiff(GND to Exposed Thermal Pad) –0.2 0.2 V
Source Current EN 100 µA
SW Current Limit A
Sink Current SW Current Limit A
COMP 200 200 µA
PGOOD –0.1 5 mA
Operating Junction Temperature –40 150 °C
Storage temperature, Tstg –65 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The human body model is a 100-pF capacitor discharged through a 1.5-kΩ resistor into each pin. The machine model is a 200-pF capacitor discharged directly into each pin.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VSS Supply input voltage 4.2 28 V
VOUT Output voltage 0.8 24 V
IOUT Output current 0 3 A
TJ Operating junction temperature(1) –40 150 °C
(1) The device must operate within 150°C to ensure continuous function and operation of the device.

7.4 Thermal Information

THERMAL METRIC(1) TPS54334 UNIT
DDA (8 PINS) DRC (10 Pins)
RθJA Junction-to-ambient thermal resistance 42.1 43.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 50.9 55.4 °C/W
RθJB Junction-to-board thermal resistance 31.8 18.9 °C/W
ψJT Junction-to-top characterization parameter 5 0.7 °C/W
ψJB Junction-to-board characterization parameter 13.5 19.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 7.1 5.3 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

The Electrical Ratings specified in this section will apply to all specifications in this document unless otherwise noted. These specifications will be interpreted as conditions that will not degrade the device’s parametric or functional specifications for the life of the product containing it. TJ = –40°C to 150°C, VIN =4.2 to 28V, (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE AND UVLO (VIN PIN)
Operating input voltage 4.2 28 V
Input UVLO threshold Rising Vin 3.9 4.2 V
Input UVLO hysteresis 180 400 mV
VIN Shutdown Supply Current EN = 0V 2 10 µA
VIN Operating– non switching supply current VSENSE=810mV 310 800 µA
ENABLE (EN PIN)
Enable threshold Rising 1.21 1.28 V
Enable threshold Falling 1.1 1.17 V
Input current EN=1.1V 1.15 µA
Hysteresis current EN=1.3V 3.3 µA
VOLTAGE REFERENCE
Reference TJ = 25°C 0.792 0.8 0.808 V
0.788 0.8 0.812 V
MOSFET
High side switch resistance(1) BOOT-SW = 3V 160 290 mΩ
BOOT-SW = 6V 128 240 mΩ
Low side switch resistance(1) 84 170 mΩ
ERROR AMPLIFIER
Error amplifier transconductance (gm) –2 µA < ICOMP < 2 µA V(COMP)=1V 1300 µmhos
Error amplifier source/sink V(COMP)=1V, 100 mV Overdrive 100 µA
Start switching peak current threshold 0.5 A
COMP to Iswitch gm 8 A/V
CURRENT LIMIT
High side switch current limit threshold 4 5.2 6.5 A
Low side switch sourcing current limit 3.5 4.7 6.1 A
Low side switch sinking current limit 0 A
Hiccup wait time 512 Cycles
Hiccup time before re-start 16384 Cycles
THERMAL SHUTDOWN
Thermal shutdown 165 °C
Thermal shutdown hysterisis 10 °C
Thermal shutdown hiccup time 32768 Cycles
SW (SW PIN)
Minimum on time Measured at 90% to 90% of VIN, ISW = 2A 94 145 ns
Minimum off time BOOT-SW ≥ 3V 0%
BOOT (BOOT PIN)
BOOT-SW UVLO 2.2 3 V
SLOW START
Internal slow start time 2 ms
SWITCHING FREQUENCY
Internal switching frequency 456 570 684 kHz
POWER GOOD (PGOOD PIN)
VSENSE falling (Fault) 84 % Vref
VSENSE rising (Good) 90 % Vref
VSENSE rising (Fault) 116 % Vref
VSENSE falling (Good) 110 % Vref
Output high leakage VSENSE = Vref, V(PGOOD) = 5.5 V 30 500 nA
Output low I(PGOOD) = 0.35 mA 0.3 V
Minimum VIN for valid output(2) V(PGOOD) < 0.5V at 100 µA 0.6 1 V
MAXIMUM OUTPUT VOLTAGE UNDER MINIMUM VIN(2)
Maximum output voltage VIN = 4.2V, Iout = 3A 2.9 V
VIN = 4.2V, Iout = 2.5A 3.2
VIN = 4.2V, Iout = 2A 3.4
VIN = 4.2V, Iout = 1.5A 3.5
(1) Measured at pins.
(2) Not tested for mass production.

7.6 Typical Characteristics

VIN = 12 V, unless otherwise specified.
TPS54334 C001_SLVSC03.png
Figure 1. High-Side Resistance vs Junction Temperature
TPS54334 C003_SLVSC03.png
Figure 3. Reference Voltage vs Junction Temperature
TPS54334 D005_SLUSC26.gif
Figure 5. Shutdown Current vs Junction Temperature
TPS54334 D007_SLUSC26.gif
Figure 7. Non-Switching Operating Quiescent Current vs Junction Temperature
TPS54334 D009_SLUSC26.gif
Figure 9. BOOT-SW UVLO Threshold vs Junction Temperature
TPS54334 D011_SLUSC26.gif
Figure 11. EN Threshold vs Junction Temperature
TPS54334 C002_SLVSC03.png
Figure 2. Low-Side Resistance vs Junction Temperature
TPS54334 D004_SLUSC26.gif
Figure 4. Switching Frequency vs Junction Temperature
TPS54334 D006_SLUSC26.gif
Figure 6. Softstart Time vs Junction Temperature
TPS54334 D008_SLUSC26.gif
Figure 8. Minimum On Time vs Junction Temperature
TPS54334 D010_SLUSC26.gif
Figure 10. High-Side Current Limit Threshold vs Junction Temperature
TPS54334 D012_SLUSC26.gif
Figure 12. VIN UVLO Threshold vs Junction Temperature