ZHCSIL4A June   2018  – December  2018 TPS51200A-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化的 DDR 应用
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Sink and Source Regulator (VO Pin)
      2. 7.3.2 Reference Input (REFIN Pin)
      3. 7.3.3 Reference Output (REFOUT Pin)
      4. 7.3.4 Soft-Start Sequencing
      5. 7.3.5 Enable Control (EN Pin)
      6. 7.3.6 Powergood Function (PGOOD Pin)
      7. 7.3.7 Current Protection (VO Pin)
      8. 7.3.8 UVLO Protection (VIN Pin)
      9. 7.3.9 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 S3 and Pseudo-S5 Support
      2. 7.4.2 Tracking Startup and Shutdown
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 VTT DIMM Applications
        1. 8.2.1.1 Design Parameters
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 VIN Capacitor
          2. 8.2.1.2.2 VLDO Input Capacitor
          3. 8.2.1.2.3 Output Capacitor
          4. 8.2.1.2.4 Output Tolerance Consideration for VTT DIMM Applications
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Design Example 1
        1. 8.2.2.1 Design Parameters
      3. 8.2.3 Design Example 2
        1. 8.2.3.1 Design Parameters
      4. 8.2.4 Design Example 3
        1. 8.2.4.1 Design Parameters
      5. 8.2.5 Design Example 4
        1. 8.2.5.1 Design Parameters
      6. 8.2.6 Design Example 5
        1. 8.2.6.1 Design Parameters
      7. 8.2.7 Design Example 6
        1. 8.2.7.1 Design Parameters
      8. 8.2.8 Design Example 7
        1. 8.2.8.1 Design Parameters
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 LDO Design Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方产品免责声明
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics

Over recommended free-air temperature range, VVIN = 3.3 V, VVLDOIN = 1.8 V, VREFIN = 0.9 V, VVOSNS = 0.9 V, VEN = VVIN, COUT = 3 × 10 μF and circuit shown in the 简化的 DDR 应用 section (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
IIN Supply current TA = 25 °C, VEN = 3.3 V, No Load 0.7 1 mA
IIN(SDN) Shutdown current TA = 25 °C, VEN = 0 V, VREFIN = 0, No Load 65 80 μA
TA = 25 °C, VEN = 0 V, VREFIN > 0.4 V, No Load 200 400
ILDOIN Supply current of VLDOIN TA = 25 °C, VEN = 3.3 V, No Load 1 50 μA
ILDOIN(SDN) Shutdown current of VLDOIN TA = 25 °C, VEN = 0 V, No Load 0.1 50 μA
INPUT CURRENT
IREFIN Input current, REFIN VEN = 3.3 V 1 μA
VO OUTPUT
VVOSNS Output DC voltage, VO VREFOUT = 1.25 V (DDR1), IO = 0 A 1.25 V
–15 15 mV
VREFOUT = 0.9 V (DDR2), IO = 0 A 0.9 V
–15 15 mV
VREFOUT = 0.75 V (DDR3), IO = 0 A 0.75 V
–15 15 mV
VREFOUT = 0.675 V (DDR3L), IO = 0 A 0.675 V
-15 15 mV
VREFOUT = 0.6 V (DDR4), IO = 0 A 0.6 V
-15 15 mV
VVOTOL Output voltage tolerance to REFOUT –2A < IVO < 2A –25 25 mV
IVOSRCL VO source current Limit With reference to REFOUT, VOSNS = 90% × VREFOUT 3 4.5 A
IVOSNCL VO sink current Limit With reference to REFOUT, VOSNS = 110% × VREFOUT 3.5 5.5 A
IDSCHRG Discharge current, VO VREFIN = 0 V, VVO = 0.3 V, VEN = 0 V, TA = 25°C 18 25 Ω
POWERGOOD COMPARATOR
VTH(PG) VO PGOOD threshold PGOOD window lower threshold with respect to REFOUT –23.5% –20% –17.5%
PGOOD window upper threshold with respect to REFOUT 17.5% 20% 23.5%
PGOOD hysteresis 5%
VPGOODLOW Output low voltage ISINK = 4 mA 0.4 V
IPGOODLK Leakage current(1) VOSNS = VREFIN (PGOOD high impedance), PGOOD = VIN + 0.2 V 1 μA
REFIN AND REFOUT
VREFIN REFIN voltage range 0.5 1.8 V
VREFINUVLO REFIN undervoltage lockout REFIN rising 360 390 420 mV
VREFINUVHYS REFIN undervoltage lockout hysteresis 20 mV
VREFOUT REFOUT voltage REFIN V
VREFOUTTOL REFOUT voltage tolerance to VREFIN –10 mA ≤ IREFOUT ≤ 10 mA, 0.6 V ≤ VREFIN ≤ 1.25 V –15 15 mV
–1 mA ≤ IREFOUT ≤ 1 mA, 0.6 V ≤ VREFIN ≤ 1.25 V -12 12
IREFOUTSRCL REFOUT source current limit VREFOUT = 0.5 V 10 40 mA
IREFOUTSNCL REFOUT sink current limit VREFOUT = 1.5 V 10 40 mA
UVLO / EN LOGIC THRESHOLD
VVINUVLO UVLO threshold Wake up, TA = 25°C 2.2 2.3 2.375 V
Hysteresis 50 mV
VENIH High-level input voltage Enable 1.7 V
VENIL Low-level input voltage Enable 0.3 V
VENYST Hysteresis voltage Enable 0.5 V
IENLEAK Logic input leakage current EN, TA = 25°C –1 1 μA
THERMAL SHUTDOWN
TSDN Thermal shutdown threshold(1) Shutdown temperature 150 °C
Hysteresis 25
(1) Ensured by design. Not production tested.