SLVS616C November   2005  – December 2014 TPS51124

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Recommended Operating Conditions
    3. 6.3 Thermal Information
    4. 6.4 Electrical Characteristics
    5. 6.5 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  PWM Operation
      2. 7.3.2  Light-Load Condition
      3. 7.3.3  Low-Side Driver
      4. 7.3.4  High-Side Driver
      5. 7.3.5  PWM Frequency and Adaptive On-Time Control
      6. 7.3.6  Powergood
      7. 7.3.7  Output Discharge Control
      8. 7.3.8  Current Protection
      9. 7.3.9  Over and Undervoltage Protection
      10. 7.3.10 UVLO Protection
      11. 7.3.11 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Enable and Soft-Start
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Third-Party Products Disclaimer
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings(1)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Input voltage VBST1, VBST2 –0.3 36 V
VBST1, VBST2 (wrt LLx) –0.3 6
V5IN, V5FILT, EN1, EN2, VFB1, VFB2, TRIP1, TRIP2, VO1, VO2, TONSEL –0.3 6
Output voltage DRVH1, DRVH2 –1 36 V
DRVH1, DRVH2 (wrt LLx) –0.3 6
LL1, LL2 –2 30
PGOOD1, PGOOD2, DRVL1, DRVL2 –0.3 6
PGND1, PGND2 –0.3 0.3
TA Operating ambient temperature –40 85 °C
TJ Junction temperature –40 125 °C
Tstg Storage temperature –55 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to the network ground terminal unless otherwise noted

6.2 Recommended Operating Conditions

over operating free-air temperature (unless otherwise noted)
MIN MAX UNIT
Supply input voltage V5IN, V5FILT 4.5 5.5 V
Input voltage VBST1, VBST2 –0.1 34 V
VBST1, VBST2 (wrt LLx) –0.1 5.5
EN1, EN2, VFB1, VFB2, TRIP1, TRIP2, VO1, VO2, TONSEL –0.1 5.5
Output voltage DRVH1, DRVH2 –0.8 34 V
DRVH1, DRVH2 (wrt LLx) –0.1 5.5
LL1, LL2 –1.8 28
PGOOD1, PGOOD2, DRVL1, DRVL2 –0.1 5.5
PGND1, PGND2 –0.1 0.1
TA Operating ambient temperature –40 85 °C

6.3 Thermal Information

THERMAL METRIC(1) TPS51124 UNIT
VQFN
24 PINS
RθJA Junction-to-ambient thermal resistance 42.9 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.4 Electrical Characteristics

over operating free-air temperature range, V5IN = V5FILT = 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
IV5FILT V5FILT supply current V5FILT current, no load,
EN1 = EN2 = 5 V, VFB1 = VFB2 = 0.77 V,
LL1=LL2=0.5V
350 700 μA
IV5INSDN V5IN shutdown current V5IN current, no load, EN1 = EN2 = 0 V 1 μA
IV5FILTSDN V5FILT shutdown current V5FILT current, no load, EN1 = EN2 = 0 V 1 μA
VFB VOLTAGE and DISCHARGE RESISTANCE
VVFB VFB regulation voltage FB voltage, skip mode (fPWM/10) 764 mV
VVFB VFB regulation voltage tolerance TA = 25°C, bandgap initial accuracy –0.9% 0.9%
TA = 0°C to 85°C(1) –1.3% 1.3%
TA = –40°C to 85°C(1) –1.6% 1.6%
VVFBSKIP VFB regulation shift in continuous conduction 0.758-V target for resistor divider. See PWM Operation of Detailed Description(1) 758 mV
IVFB VFB input current VFBx = 0.758 V, absolute value 0.02 0.1 μA
RDischg VO discharge resistance ENx = 0 V, VOx = 0.5 V, TA = 25°C 10 20 Ω
OUTPUT: N-CHANEEL MOSFET GATE DRIVERS
RDRVH DRVH resistance Source, VVBSTx–DRVHx = 0.5 V 5 7 Ω
Sink, VDRVHx-LLx= 0.5 V 1.5 2.5 Ω
RDRVL DRVL resistance Source, VV5IN–DRVLx = 0.5 V 4 6 Ω
Sink, VDRVLx–PGNDx = 0.5 V 1 2.0 Ω
TD Dead time DRVHx-low (DRVHx = 1 V) to DRVLx-on
(DRVLx = 4 V), LL = –0.05 V,
10 20 50 ns
DRVLx-low (DRVLx = 1 V) to DRVHx-on
(DRVHx = 4 V), LL = –0.05 V,
30 40 60 ns
INTERNAL BST DIODE
VFBST Forward voltage VV5IN–VBSTx, IF = 10 mA, TA = 25°C 0.7 0.8 0.9 V
IVBSTLK VBST leakage current VBST = 34 V, LL = 28 V, VOx = 5.5 V,
TA = 25°C
0.1 1 μA
ON-TIME TIMER CONTROL AND INTERNAL SOFT START,
TON11 CH1, 240-kHz setting VO1 = 1.5 V,TONSEL = GND, LL1 = 12 V 440 500 560 ns
TON12 CH1, 300-kHz setting VO1 = 1.5 V, TONSEL = FLOAT, LL1 = 12 V 340 390 440 ns
TON13 CH1, 360-kHz setting VO1 = 1.5 V,TONSEL = V5FILT, LL1 = 12 V 265 305 345 ns
TON21 CH2, 300-kHz setting VO2 = 1.05 V, TONSEL = GND, LL2 = 12 V 235 270 305 ns
TON22 CH2, 360-kHz setting VO2 = 1.05 V, TONSEL = FLOAT, LL2 = 12 V 180 210 240 ns
TON23 CH2, 420-kHz setting VO2 = 1.05 V, TONSEL = V5FILT, LL2 = 12 V 120 150 180 ns
TON(MIN) CH2 On time VO2 = 0.76 V, TONSEL = V5FILT, LL2 = 28 V 80 110 140 ns
TOFF(MIN) CH1/CH2 Min. off time LL = –0.1 V, TA= 25°C, VFB = 0.7 V 435 ns
Tss Internal SS time Internal soft start, time from ENx > 3 V to VFBx regulation value = 735 mV 0.85 1.2 1.40 ms
UVLO/LOGIC THRESHOLD
VUV5VFILT V5FILT UVLO threshold Wake up 3.7 4.0 4.3 V
Hysteresis 0.2 0.3 0.4
VEN ENx threshold Wake up 1.0 1.3 1.5 V
Hysteresis 0.2
IEN ENx input current Absolute value(2) 0.02 0.1 μA
VTONSEL TONSEL threshold Fast(2) V5FILT –0.3 V
Medium(2) 2 V5FILT –1.0
Slow(2) 0.5
ITONSEL TONSEL input current TONSEL=0V, current out of the pin(2) 1 μA
TONSEL=5V, current in to the pin(2) 1
CURRENT SENSE
ITRIP TRIP source current VTRIPx < 0.3 V, TA = 25°C 9 10 11 μA
TCITRIP ITRIP temperature coeffficent On the basis of 25°C(2) 4200 ppm/°C
VOCLoff OCP compensation offset (VTRIPx-GND – VPGNDx-LLx) voltage,
VTRIPx-GND = 60 mV
–10 0 10 mV
VZC Zero cross detection comparator offset VPGNDx-LLx voltage, PGOODx = Hi(2) 0.5 mV
VRtrip Current limit threshold setting range VTRIPx-GND voltage, all temperatures(2) 30 200 mV
POWERGOOD COMPARATOR
VTHPG PG threshold PG in from lower (PGOODx goes hi) 92.5% 95% 97.5%
PG low hysteresis (PGOODx goes low) –5%
PG in from higher (PGOODx goes hi) 102.5% 105% 107.5%
PG high hysteresis (PGOODx goes low) 5%
IPGMAX PG sink current PGOODx = 0.5 V 2.5 5.0 mA
TPGDEL PG delay Delay for PG in 400 510 620 μs
OUTPUT UNDERVOLTAGE AND OVERVOLTAGE PROTECTION
VOVP Output OVP trip threshold OVP detect 110% 115% 120%
tOVPDEL Output OVP prop delay 1.5 μs
VUVP Output UVP trip threshold Hysteresis (recovery < 20 μs) 10%
tUVPDEL Output UVP delay 20 32 40 μs
tUVPEN Output UVP enable delay After 1.7 × Tss, UVP protection engaged 1.4 2 2.4 ms
THERMAL SHUTDOWN
TSDN Thermal shutdown threshold Shutdown temperature(2) 160 °C
Hysteresis(2) 10
(1) Specified by design. Not production tested.
(2) Ensured by design. Not production tested.

6.5 Typical Characteristics

icc_tj_lvs616.gif
Figure 1. V5FILT Supply Current vs Junction Temperature
shtd2_tj_lvs616.gif
Figure 3. V5IN Shutdown Current vs Junction Temperature
ovp_tj_lvs616.gif
Figure 5. OVP/UVP Threshold vs Junction Temperature
swf2_vi_lvs616.gif
Figure 7. Switching Frequency (MED) vs Input Voltage
swf_io_lvs616.gif
Figure 9. Switching Frequency (Slow) vs Output Voltage
(2) The data of – are measured from the Typical Application Circuit of and .
swf3_io_lvs616.gif
Figure 11. Switching Frequency (Fast) vs Output Voltage
vo2_io_lvs616.gif
Figure 13. 1.5-V Output Voltage vs Output Current
(3) The data of – are measured from the Typical Application Circuit of and
vo_vi2_lvs616.gif
Figure 15. 1.5-V Output Voltage vs Input Voltage
eff2_io_lvs616.gif
Figure 17. 1.5-V Efficiency vs Output Current
(4) The data of – are measured from the Typical Application Circuit of and
shtd_tj_lvs616.gif
Figure 2. V5FILT Shutdown Current vs Junction Temperature
trip_tj_lvs616.gif
Figure 4. Trip Source Current vs Junction Temperature
swf_vi_lvs616.gif
Figure 6. Switching Frequency (Slow) vs Input Voltage
(1) The data of – are measured from the Typical Application Circuit of and .
swf3_vi_lvs616.gif
Figure 8. Switching Frequency (Fast) vs Input Voltage
swf2_io_lvs616.gif
Figure 10. Switching Frequency (MED) vs Output Voltage
vo_io_lvs616.gif
Figure 12. 1.05-V Output Voltage vs Output Current
vo_vi_lvs616.gif
Figure 14. 1.05-V Output Voltage vs Input Voltage
eff_io_lvs616.gif
Figure 16. 1.05-V Efficiency vs Output Current