ZHCSOF8C november   2021  – april 2023 TPS2597

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout (UVLO and UVP)
      2. 8.3.2 Overvoltage Lockout (OVLO)
      3. 8.3.3 Overvoltage Clamp (OVC)
      4. 8.3.4 Inrush Current, Overcurrent, and Short Circuit Protection
        1. 8.3.4.1 Slew Rate (dVdt) and Inrush Current Control
        2. 8.3.4.2 Circuit-Breaker
        3. 8.3.4.3 Active Current Limiting
        4. 8.3.4.4 Short-Circuit Protection
      5. 8.3.5 Analog Load Current Monitor
      6. 8.3.6 Overtemperature Protection (OTP)
      7. 8.3.7 Fault Response and Indication (FLT)
      8. 8.3.8 Power-Good Indication (PG)
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Single Device, Self-Controlled
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Device Selection
        2. 9.2.2.2 Setting Undervoltage and Overvoltage Thresholds
        3. 9.2.2.3 Setting Output Voltage Rise Time (tR)
        4. 9.2.2.4 Setting Power-Good Assertion Threshold
        5. 9.2.2.5 Setting Overcurrent Threshold (ILIM)
        6. 9.2.2.6 Setting Overcurrent Blanking Interval (tITIMER)
      3. 9.2.3 Application Curves
    3. 9.3 Parallel Operation
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Transient Protection
      2. 9.4.2 Output Short-Circuit Measurements
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 第三方产品免责声明
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 接收文档更新通知
    4. 10.4 支持资源
    5. 10.5 Trademarks
    6. 10.6 静电放电警告
    7. 10.7 术语表
  11. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

9.2.2.4 Setting Power-Good Assertion Threshold

The Power Good assertion threshold can be set using the resistors R4 and R5 connected to the PGTH pin, whose values can be calculated as:

Equation 16. VPG=VPGTH(R) × (R4 + R5)R5 

Because R4 and R5 leak the current from the output rail VOUT, these resistors must be selected to minimize the leakage current. The current drawn by R4 and R5 from the power supply is IR45 = VOUT / (R4 + R5). However, leakage currents due to external active components connected to the resistor string can add error to these calculations. So, the resistor string current, IR123 must be chosen to be 20 times greater than the PGTH leakage current expected.

From the device electrical specifications, PGTH leakage current is 1 μA (maximum), VPGTH(R) = 1.2 V and from design requirements, VPG = 11.4 V. To solve the equation, first choose the value of R4 = 47 kΩ and calculate R5 = 5.52 kΩ. Choose the nearest 1% standard resistor value as R5 = 5.6 kΩ.