SPAS093C December   2009  – September 2015 TPS2505

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics (Shared Boost, LDO and USB)
    6. 6.6  Electrical Characteristics (Boost Only)
    7. 6.7  Electrical Characteristics (USB1/2 Only)
    8. 6.8  Electrical Characteristics (LDO and Reset Only)
    9. 6.9  Recommended External Components
    10. 6.10 Dissipation Ratings
    11. 6.11 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  PGND
      2. 8.3.2  IN
      3. 8.3.3  EN
      4. 8.3.4  GND
      5. 8.3.5  ILIM1/2
      6. 8.3.6  RESET
      7. 8.3.7  LDOOUT
      8. 8.3.8  LDOIN
      9. 8.3.9  ENLDO
      10. 8.3.10 FAULT1/2
      11. 8.3.11 ENUSB1/2
      12. 8.3.12 USB1/2
      13. 8.3.13 AUX
      14. 8.3.14 SW
      15. 8.3.15 Thermal Pad
      16. 8.3.16 Boost Converter
        1. 8.3.16.1 Start-Up
        2. 8.3.16.2 Normal Operation
        3. 8.3.16.3 Low-Frequency Mode
        4. 8.3.16.4 No-Frequency Mode
        5. 8.3.16.5 Pulsed Frequency Mode (PFM) Light-Load Operation
        6. 8.3.16.6 Overvoltage Protection
        7. 8.3.16.7 Overload Conditions
        8. 8.3.16.8 Determining the Maximum Allowable AUX and USB1/2 Current
      17. 8.3.17 USB Switches
        1. 8.3.17.1 Overview
        2. 8.3.17.2 Overcurrent Conditions
        3. 8.3.17.3 FAULT1/2 Response
        4. 8.3.17.4 Undervoltage Lockout
        5. 8.3.17.5 Programming the Current-Limit Threshold Resistor RILIM
      18. 8.3.18 3.3-V LDO
      19. 8.3.19 Reset Comparator
      20. 8.3.20 Thermal Shutdown
      21. 8.3.21 Component Recommendations
        1. 8.3.21.1 Boost Inductor
        2. 8.3.21.2 IN Capacitance
        3. 8.3.21.3 AUX Capacitance
        4. 8.3.21.4 USB Capacitance
        5. 8.3.21.5 ILIM1/2 and FAULT1/2 Resistors
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Step-by-Step Design Procedure
        2. 9.2.2.2 Switching Frequency
        3. 9.2.2.3 AUX Voltage
        4. 9.2.2.4 Determine Maximum Total Current (IAUX + ILDO + IUSB1 + IUSB2 )
        5. 9.2.2.5 Power Inductor
        6. 9.2.2.6 Output AUX Capacitor Selection
        7. 9.2.2.7 Output USB1/2 Capacitor Selection
        8. 9.2.2.8 Input Capacitor Selection
          1. 9.2.2.8.1 Current-Limit Threshold Resistor RILIM
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Community Resources
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted).(1)(2)
MIN MAX UNIT
Input voltage on SW, AUX, IN, USB, ENUSB, EN, FAULT, ILIM –0.3 7 V
FAULT sink current 25 mA
ILIM source current 1 mA
Operating junction temperature, TJ –40 125 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Voltages are referenced to GND and PGND tied together.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN Supply voltage at IN 1.8 5.25 V
VSTART Supply voltage at IN for start-up 2.2 V
Enable voltage at EN, ENUSB1, ENUSB2, ENLDO 0 5.25 V
TA Operating free air temperature range –40 85 °C
TJ Operating junction temperature range –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) TPS2505 UNIT
RGW (VQFN)
20 PINS
RθJA Junction-to-ambient thermal resistance 34.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 30 °C/W
RθJB Junction-to-board thermal resistance 13.5 °C/W
ψJT Junction-to-top characterization parameter 0.4 °C/W
ψJB Junction-to-board characterization parameter 13.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.1 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics (Shared Boost, LDO and USB)

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BIAS
Bias Current VIN VIN = 3.3 V, VAUX = 5.2 V, VEN = VIN,
VENUSB1 = VAUX, IAUX = IUSB = 0 A		 15 25 µA
VAUX 500 600
Shutdown current VIN VIN = 3.3 V, VEN = VENUSB = 0 V,
AUX and USB OPEN,
–40°C ≤ TJ ≤ 85°C		 5 µA
UVLO
Undervoltage lockout threshold on IN for boost converter VIN rising 2.08 2.20 V
VIN falling,
VAUX = 5.2 V		 Threshold 1.69 1.85
Hysteresis 0.4
VIN falling,
VAUX = OPEN		 Threshold 1.93 2.05
Hysteresis 0.15
Undervoltage lockout threshold on AUX for USB switches VAUX rising 4.18 4.45 V
VAUX falling Threshold 4.1 4.37
Hysteresis 0.09
THERMAL SHUTDOWN
Full thermal shutdown thereshold 150 °C
Hysteresis 10 °C
USB only thermal shutdown 130 °C
Hysteresis 10 °C

6.6 Electrical Characteristics (Boost Only)

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
APPLICATION SPECIFICATIONS
VAUX AUX regulation voltage Includes ripple and line/load regulation
USB1/2 enabled
CUSB1/2 = 100 µF		 4.75 5.1 5.25 V
VRIPPLE AUX ripple voltage PFM, IO = 100 mA
USB1/2 enabled
CUSB1/2 = 100 µF		 250 mV
PWM, IO = 1100 mA
USB1/2 enabled
CUSB1/2 = 100 µF		 75
Load regulation(1) IO = 0 mA to 1100 mA (PWM operation only) 50 mV
Line regulation IO = 1100 mA (PWM operation) 50 mV
IO = 1100 mA, VIN = 3.6 V to 5.25 V 300(2)
VREF Internal reference voltage 1.35 V
OSCILLATOR
freq Switching frequency, normal mode VIN < VLFM 850 1000 1150 kHz
Switching frequency, low-frequency mode VIN > VLFM 225 250 275 kHz
VLFM Low-frequency mode input voltage threshold 4.25 4.35 4.45 V
Hysteresis 200 mV
VNFM No-frequency mode input voltage threshold
(Boost SYNC MOSFET always on)		 VIN rising 4.9 5.05 5.17 V
Hysteresis 75 mV
Maximum duty cycle 85%
Minimum controllable on-time 85 ns
PULSE FREQUENCY MODE (PFM)
IINDLOW Demanded peak current to enter PFM mode Peak inductor current, falling 420 mA
AUXLOW AUX too low comparator threshold Resume switching due to AUX, falling 0.98 × VAUX V
POWERSTAGE
Switch on resistance (SWN) 120 mΩ
ISW Peak switch current limit
(SWN MOSFET)		 3 4.5 6 A
Switch ON-resistance (SWP) Vsg = VMAX 125 mΩ
Switch ON-resistance (SWP + USB) VIN > VNFM 125 185 mΩ
START UP(3)
ISTART Constant current 0.1 A
VEXIT Constant current exit threshold
(VIN –VAUX)		 700 mV
tstartup Boost startup time VIN = 5.1 V, COUT = 150 µF 25 40 ms
BOOST ENABLE (EN)
Enable threshold, boost converter 0.7 1 V
IEN Input current VEN = 0 V or 5.5 V –0.5 0.5 µA
(1) Load regulation in No Frequency or Pass-Through is given by IR drop across SWP switch resistance..
(2) Includes voltage drop when transitioning to No Frequency or Pass-Through Mode, where VAUX is no longer a closed loop regulated voltage and drops to VNFM – ILOADRSWP. For No Frequency or Pass-Through, ΔVAUX/ ΔVIN = 1.
(3) VAUX pin must be unloaded during start-up.

6.7 Electrical Characteristics (USB1/2 Only)

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
USB1, USB2
rDS(on) USB switch resistance 80 mΩ
tr Rise time, output VAUX = 5.1 V, CL = 100 µF,
RL = 10 Ω		 2 3 ms
tf Fall time, output VAUX = 5.1 V, CL = 100 µF,
RL = 10 Ω		 2.5 3.5 ms
VUSB1/2 USB1/2 output voltage Including ripple
CL = 100 µF		 4.75 5.25 mV
USB ENABLE (ENUSB1, ENUSB2)
Enables threshold, USB switch 0.7 1 V
IENUSB Input current VENUSB = 0 V or 5.5 V –0.5 0.5 µA
Turnon time CL = 100 µF, RL = 10 Ω 5 ms
Turnoff time CL = 100 µF, RL = 10 Ω 10 ms
/FAULT1, /FAULT2
Output low voltage I/FAULT = 1 mA 150 mV
Off-state current V/FAULT = 5.5 V 1 µA
tDEG /FAULT deglitch /FAULT assertion or deassertion due to over-current condition 6 8 10 ms
ILIM1, ILIM2
IOS Short-circuit output current RILIM = 100 kΩ 190 380 mA
RILIM = 40 kΩ 550 875
RILIM = 20 kΩ 1140 1700

6.8 Electrical Characteristics (LDO and Reset Only)

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LDO SPECIFICATIONS
Input voltage 3.8 5.1 5.25 V
Output voltage Including line/load regulation 3.2 3.3 3.4 V
DC accuracy ±3%
Line regualtion ILOAD: 200 mA 5 mV
Line transient 500 mV step at 50 mV/μs 15 mV
Load regulation 20 mV
Load transient ILOAD: 0 mA - 200 mA in 1 μs 120 mV
Dropout voltage 300 mV
Output overshoot 3%
tr Rise time, output VAUX = 5.1 V, CL = 1 µF 200 µs
tf Fall time, output VAUX = 5.1 V, CL = 1 µF 1 ms
IOS Short-circuit output current 350 800 mA
PSRR 20 Hz < f < 20 kHz, IL = 100 mA 40 dB
RESET SPECIFICATIONS
Threshold voltage VLDOOUT rising 3.09 3.1 3.11 V
VLDOOUT falling 2.91 2.975 3.03
Deglitch timing Low to high transition 150 175 200 ms
Internal pullup resistance 8 10 12 kΩ

6.9 Recommended External Components

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Inductor 2.2 4.7 µH
Boost input capacitance (ceramic capacitor, X5R, 10V, 0805) 10 µF
Boost output capacitance (ceramic capacitor, X5R, 10V, 1210) 22 µF
LDO input capacitance (ceramic capacitor, X5R) 4.7 µF
LDO output capacitance (ceramic capacitor, X5R) 0.7 1 µF
RILIM Current-limit set resistor from ILIM to GND 20 220 kΩ

6.10 Dissipation Ratings

PACKAGE RθJA TA ≤ 25°C POWER RATING
RGW 34.3 C°/W 2.4 W

6.11 Typical Characteristics

TPS2505 g_maxtotdc_involt_pas093.gif Figure 1. Maximum Total DC-DC Current vs Input Voltage
TPS2505 g_boostout_involt_pas093.gif Figure 3. Boost Output Voltage vs Input Voltage
TPS2505 g_usb1start_noload_pas093.gif Figure 5. USB1 Start-Up After Enable – No Load
TPS2505 g_ldoresetdeglitch_pas093.gif
Figure 7. LDO RESET Deglitch Time
TPS2505 g_typoncurr_noload_pas093.gif Figure 2. TPS2505 Typical On Input Current With No Load
TPS2505 g_booststart_noload_pas093.gif
Figure 4. Boost Start-Up After Enable – No Load
TPS2505 g_boostoutripple_pfmop_pas093.gif Figure 6. Boost Output Ripple in PFM Operation
TPS2505 g_ldooutvolt_outcurr_pas093.gif Figure 8. LDO Output Voltage vs Output Current