ZHCS127D March   2011  – March 2015 TPS24720

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 典型应用 (12V/10A)
  5. 5 修订历史记录
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 THERMAL INFORMATION
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Detailed Pin Descriptions
        1. 8.3.1.1  EN
        2. 8.3.1.2  ENSD
        3. 8.3.1.3  FFLTb
        4. 8.3.1.4  FLTb
        5. 8.3.1.5  GATE
        6. 8.3.1.6  GND
        7. 8.3.1.7  IMON
        8. 8.3.1.8  LATCH
        9. 8.3.1.9  OUT
        10. 8.3.1.10 OV
        11. 8.3.1.11 PGb
        12. 8.3.1.12 PROG
        13. 8.3.1.13 SENSE
        14. 8.3.1.14 SET
        15. 8.3.1.15 TIMER
        16. 8.3.1.16 VCC
    4. 8.4 Device Functional Modes
      1. 8.4.1  Board Plug-In
      2. 8.4.2  Inrush Operation
      3. 8.4.3  Action of the Constant-Power Engine
      4. 8.4.4  Circuit Breaker and Fast Trip
      5. 8.4.5  Automatic Restart
      6. 8.4.6  PGb, FLTb, and Timer Operations
      7. 8.4.7  Overtemperature Shutdown
      8. 8.4.8  Start-Up of Hot-Swap Circuit by VCC or EN
      9. 8.4.9  Minimization of Power Dissipation at STANDY by ENSD
      10. 8.4.10 Fault Detection of MOSFET Short With FFLTb
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Power-Limited Start-Up
          1. 9.2.2.1.1 STEP 1. Choose RSENSE, RSET, and RIMON
          2. 9.2.2.1.2 STEP 2. Choose MOSFET M1
          3. 9.2.2.1.3 STEP 3. Choose Power-Limit Value, PLIM, and RPROG
          4. 9.2.2.1.4 STEP 4. Choose Output Voltage Rising Time, tON, and Timing Capacitor CT
          5. 9.2.2.1.5 STEP 5. Calculate the Retry-Mode Duty Ratio
          6. 9.2.2.1.6 STEP 6. Select R1, R2, and R3 for UV and OV
          7. 9.2.2.1.7 STEP 7. Choose RGATE, R4, R5, R6, and C1
        2. 9.2.2.2 Additional Design Considerations
          1. 9.2.2.2.1 Use of PGb
          2. 9.2.2.2.2 Output Clamp Diode
          3. 9.2.2.2.3 Gate Clamp Diode
          4. 9.2.2.2.4 High-Gate-Capacitance Applications
          5. 9.2.2.2.5 Bypass Capacitors
          6. 9.2.2.2.6 Output Short-Circuit Measurements
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
    2. 12.2 商标
    3. 12.3 静电放电警告
    4. 12.4 术语表
  13. 13机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 修订历史记录

Changes from C Revision (September 2013) to D Revision

  • 已添加 ESD 额定值表，特性描述部分，器件功能模式，应用和实施部分，电源相关建议部分，布局部分，器件和文档支持部分以及机械、封装和可订购信息部分。 Go
  • Changed the Input voltage range, PROG - MAX value in the Absolute Maximum Ratings table From: 0.3 To: 3.6 Go
  • Deleted External capacitance - GATE from the Recommended Operating ConditionsGo
  • Deleted text from the last paragraph in the GATE section "If used, any capacitor connecting GATE and GND should not exceed 1 μF and it should be connected in series with a resistor of no less than 1 kΩ."Go
  • Deleted section: Alternative Design Example: GATE Capacitor (dV/dt) Control in Inrush ModeGo
  • Deleted text from the High-Gate-Capacitance Applications section "When gate capacitor dV/dt control is used, ... then a Zener diode is not necessary."Go

Changes from B Revision (May 2011) to C Revision

  • Added Note to Supply Current DisabledGo
  • Added Note to Fast-turnoff delayGo
  • Changed Gate Comparator 6 V to 5.9 V in Functional Block DiagramGo
  • Changed text From :(6 V for VVCC = 12 V) To: (5.9 V for VVCC = 12 V) in the GATE pin descriptionGo
  • Changed Equation 1Go
  • Changed text in the INRUSH OPERATION sectionGo
  • Changed Equation 8Go
  • Added text and new Equation 9Go
  • Changed Equation 11Go
  • Changed text From: VGS rises 6 V To: VGS rises 5.9 VGo
  • Changed text following Equation 11, From: 1.23 ms To 1.22 msGo
  • Changed Equation 15Go
  • Changed text describing Equation 15 and Equation 16 in the Alternative Design Example section. (Equation 15 and Equation 16 deleted by revision F.)Go

Changes from A Revision (April 2011) to B Revision

  • Changed voltages in PGb pin description from 140 mV and 340 mV to 170 mV and 240 mV.Go
  • Changed RIMON equationGo

Changes from * Revision (March 2011) to A Revision