ZHCSA62B August   2012  – August 2014 TPS22965

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 简化电路原理图
  5. 5 修订历史记录
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics, VBIAS = 5.0 V
    6. 7.6 Electrical Characteristics, VBIAS = 2.5 V
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
    9. 7.9 Typical Switching Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Adjustable Rise Time
      2. 8.3.2 Quick Output Discharge
      3. 8.3.3 Low Power Consumption During Off State
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 ON/OFF Control
      2. 9.1.2 Input Capacitor (Optional)
      3. 9.1.3 Output Capacitor (Optional)
      4. 9.1.4 VIN and VBIAS Voltage Range
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Inrush Current
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12器件和文档支持
    1. 12.1 商标
    2. 12.2 静电放电警告
    3. 12.3 术语表
  13. 13机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
VIN Input voltage range –0.3 6 V
VOUT Output voltage range –0.3 6 V
VBIAS Bias voltage range –0.3 6 V
VON Input voltage range –0.3 6 V
IMAX Maximum continuous switch current 6 A
IPLS Maximum pulsed switch current, pulse <300 µs, 2% duty cycle 8 A
TJ Maximum junction temperature 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.

7.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) –2000 2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) –1000 1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

MIN MAX UNIT
VIN Input voltage range 0.8 VBIAS V
VBIAS Bias voltage range 2.5 5.7 V
VON ON voltage range 0 5.7 V
VOUT Output voltage range VIN V
VIH High-level input voltage, ON VBIAS = 2.5 V to 5.7 V 1.2 5.7 V
VIL Low-level input voltage, ON VBIAS = 2.5 V to 5.7 V 0 0.5 V
CIN Input capacitor 1(2) µF
TA Operating free-air temperature range(1) –40 85 °C
(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature [TJ(max)], the maximum power dissipation of the device in the application [PD(max)], and the junction-to-ambient thermal resistance of the part/package in the application (θJA), as given by the following equation: TA(max) = TJ(max) – (θJA × PD(max))
(2) Refer to Application Information section.

7.4 Thermal Information

THERMAL METRIC(1) TPS22965 UNIT
DSG (8 PINS)
RθJA Junction-to-ambient thermal resistance 65.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 74.2
RθJB Junction-to-board thermal resistance 35.4
ψJT Junction-to-top characterization parameter 2.2
ψJB Junction-to-board characterization parameter 36.0
RθJC(bot) Junction-to-case (bottom) thermal resistance 12.8
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics, VBIAS = 5.0 V

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature –40 °C ≤ TA ≤ 85 °C (Full) and VBIAS = 5.0 V. Typical values are for TA = 25 °C.
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
IIN(VBIAS-ON) VBIAS quiescent current IOUT = 0 mA,
VIN = VON = VBIAS = 5.0 V		 Full 50 75 µA
IIN(VBIAS-OFF) VBIAS shutdown current VON = GND, VOUT = 0 V Full 2 µA
IIN(VIN-OFF) VIN off-state supply current VON = GND,
VOUT = 0 V		 VIN = 5.0 V Full 0.2 8 µA
VIN = 3.3 V 0.02 3
VIN = 1.8 V 0.01 2
VIN = 0.8 V 0.005 1
ION ON pin input leakage current VON = 5.5 V Full 0.5 µA
RESISTANCE CHARACTERISTICS
RON ON-state resistance IOUT = –200 mA,
VBIAS = 5.0 V		 VIN = 5.0 V 25°C 16 23 mΩ
Full 25
VIN = 3.3 V 25°C 16 23 mΩ
Full 25
VIN = 1.8 V 25°C 16 23 mΩ
Full 25
VIN = 1.5 V 25°C 16 23 mΩ
Full 25
VIN = 1.2 V 25°C 16 23 mΩ
Full 25
VIN = 0.8 V 25°C 16 23 mΩ
Full 25
RPD Output pull-down resistance VIN = 5.0 V, VON = 0 V, IOUT = 15 mA Full 225 300 Ω

7.6 Electrical Characteristics, VBIAS = 2.5 V

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature –40 °C ≤ TA ≤ 85 °C (Full) and VBIAS = 2.5 V. Typical values are for TA = 25 °C.
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
IIN(VBIAS-ON) VBIAS quiescent current IOUT = 0 mA,
VIN = VON = VBIAS = 2.5 V		 Full 20 30 µA
IIN(VBIAS-OFF) VBIAS shutdown current VON = GND, VOUT = 0 V Full 2 µA
IIN(VIN-OFF) VIN off-state supply current VON = GND,
VOUT = 0 V		 VIN = 2.5 V Full 0.01 3 µA
VIN = 1.8 V 0.01 2
VIN = 1.2 V 0.005 2
VIN = 0.8 V 0.003 1
ION ON pin input leakage current VON = 5.5 V Full 0.5 µA
RESISTANCE CHARACTERISTICS
RON ON-state resistance IOUT = –200 mA,
VBIAS = 2.5 V		 VIN = 2.5 V 25°C 20 26 mΩ
Full 28
VIN = 1.8 V 25°C 19 26 mΩ
Full 28
VIN = 1.5 V 25°C 18 25 mΩ
Full 27
VIN = 1.2 V 25°C 18 25 mΩ
Full 27
VIN = 0.8 V 25°C 17 25 mΩ
Full 27
RPD Output pull-down resistance VIN = 2.5 V, VON = 0 V, IOUT = 1 mA Full 275 325 Ω

7.7 Switching Characteristics

PARAMETER TEST CONDITION MIN TYP MAX UNIT
VIN = VON = VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON Turn-on time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 1325 µs
tOFF Turn-off time 10
tR VOUT rise time 1625
tF VOUT fall time 3.5
tD ON delay time 500
VIN = 0.8 V, VON = VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON Turn-on time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 600 µs
tOFF Turn-off time 80
tR VOUT rise time 300
tF VOUT fall time 5.5
tD ON delay time 460
VIN = 2.5V, VON = 5 V, VBIAS = 2.5 V, TA = 25ºC (unless otherwise noted)
tON Turn-on time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 2200 µs
tOFF Turn-off time 9
tR VOUT rise time 2275
tF VOUT fall time 3.1
tD ON delay time 1075
VIN = 0.8 V, VON = 5 V, VBIAS = 2.5 V, TA = 25ºC (unless otherwise noted)
tON Turn-on time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 1450 µs
tOFF Turn-off time 60
tR VOUT rise time 875
tF VOUT fall time 5.5
tD ON delay time 1010
tst_cir_lvsbj0.gif
A. Rise and fall times of the control signal is 100 ns.
Figure 1. Test Circuit
on_off_wave_slvsbj0.gifFigure 2. tON/tOFF Waveforms

7.8 Typical Characteristics

G001_lvsbj0.gif
VIN = VBIAS VON = 5 V VOUT = Open
Figure 3. Quiescent Current vs VBIAS
G003_lvsbj0.gif
VBIAS = 5.5 V VON = 0 V VOUT = 0 V
Figure 5. Off-state VIN Current vs VIN
G005_lvsbj0.gif
VBIAS = 5.5 V IOUT = –200 mA
Figure 7. RON vs Temperature
G007_lvsbj0.gif
VBIAS = 5.5 V IOUT = –200 mA
Figure 9. RON vs VIN
G009_lvsbj0.gif
VBIAS = 5.5 V VON = 0 V IPD = 1 mA
Figure 11. RPD vs VIN
G011_lvsbj0.gif
VBIAS = 2.5 V CT = 1 nF
Figure 13. tD vs VIN
G013_lvsbj0.gif
VBIAS = 2.5 V CT = 1 nF
Figure 15. tF vs VIN
G015_lvsbj0.gif
VBIAS = 2.5 V CT = 1 nF
Figure 17. tOFF vs VIN
G017_lvsbj0.gif
VBIAS = 2.5 V CT = 1 nF
Figure 19. tON vs VIN
G019_lvsbj0.gif
VBIAS = 2.5 V CT = 1 nF
Figure 21. tR vs VIN
G021_lvsbj0.gif
VIN = 2.5 V CT = 1 nF
Figure 23. tR vs VBIAS
G002_lvsbj0.gif
VIN = VBIAS VON = 0 V VOUT = 0 V
Figure 4. Shutdown Current v. VBIAS
G004_lvsbj0.gif
VBIAS = 2.5 V IOUT = –200 mA
Figure 6. RON vs Temperature
G006_lvsbj0.gif
VBIAS = 2.5 V IOUT = –200 mA
Figure 8. RON vs VIN
G008_lvsbj0.gif
TA = 25 °C IOUT = –200 mA
Figure 10. RON vs VIN
G010_lvsbj0.gif
TA = 25 °C VIN = 2 V
Figure 12. VOUT vs VON
G012_lvsbj0.gif
VBIAS = 5.5 V CT = 1 nF
Figure 14. tD vs VIN
G014_lvsbj0.gif
VBIAS = 5.5 V CT = 1 nF
Figure 16. tF vs VIN
G016_lvsbj0.gif
VBIAS = 5.5 V CT = 1 nF
Figure 18. tOFF vs VIN
G018_lvsbj0.gif
VBIAS = 5.5 V CT = 1 nF
Figure 20. tON vs VIN
G020_lvsbj0.gif
VBIAS = 5.5 V CT = 1 nF
Figure 22. tR vs VIN

7.9 Typical Switching Characteristics

TA = 25 °C, CT = 1 nF, CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω, CH1 = VOUT, CH2 = VON
sc001_lvsbj0.png
VIN = 0.8 V VBIAS = 2.5 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 24. Turn-on Response Time
sc003_lvsbj0.png
VIN = 2.5 V VBIAS = 2.5 V CIN = 1 µF,
CL = 0.1 µF RL = 10 Ω
Figure 26. Turn-on Response Time
sc005_lvsbj0.png
VIN = 0.8 V VBIAS = 2.5 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 28. Turn-off Response Time
sc007_lvsbj0.png
VIN = 2.5 V VBIAS = 2.5 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 30. Turn-off Response Time
sc002_lvsbj0.png
VIN = 0.8 V VBIAS = 5.0 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 25. Turn-on Response Time
tst_lvsbj0.png
VIN = 5.0 V VBIAS = 5.0 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 27. Turn-off Response Time
sc006_lvsbj0.png
VIN = 0.8 V VBIAS = 5.0 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 29. Turn-on Response Time
sc008_lvsbj0.png
VIN = 5.0 V VBIAS = 5.0 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω)
Figure 31. Turn-off Response Time