SLDS182A August 2010 – July 2015 TPIC7218-Q1
PRODUCTION DATA.
MIN | MAX | UNIT | ||||
---|---|---|---|---|---|---|
Supply voltage, VCC | VDD, VIO | –0.3 | 6.5 | V | ||
Input voltage, VIN | WDin, CNT_EN, CNT_CLR, SI, SCLK, CSN, KRX, KTX, WL_LS, WLGx, VIO, HSMC, HSPC | –0.3 | 6.5 | V | ||
WSSQx, WSSx, WSLSx | –0.3 | 40 | V | |||
CHP | –0.3 | 55 | V | |||
DMR,DPR | –1 | 40 | V | |||
SMR,SPR, TEST | –0.3 | 40 | V | |||
Supply voltage range, VBAT | Load dump | VBAT | –1 | 40 | V | |
Transient (2 ms) | –1 | 40 | V | |||
Load dump voltage, VISOK(2) | ISOK | –0.3 | 40 | V | ||
Output voltage, VOUT | Qx, WLQx, WSSQx | –0.3 | 40 | V | ||
SO | –0.3 | (VCC + 0.3 ) | V | |||
nRST , WL_LS | –0.3 | 6.5 | V | |||
GMR, GPR | –1 | 55 | V | |||
REF voltage, VREF | REF, VREF | –0.3 | 6.5 | V | ||
Ground voltage, VGND | PGNDx, GND | –0.3 | 0.3 | V | ||
Drain current, IIN | Continuous | Q1, 2, 3, 4 | 0 | 5 | A | |
Q5, 6, 7, 8, | 0 | 3.5 | A | |||
WLQx | 0 | 100 | mA | |||
nRST | ±20 | mA | ||||
Negative Transients | Q1, 2, 3, 4 (10 ms) | –5 | 0 | A | ||
Q5, 6, 7, 8, (10 ms) | –5 | 0 | A | |||
WLQx (2 ms) | –5 | 0 | A | |||
Input current, IIN | WDIN, WLGx, CNT_EN, CNT_CLR, SI, SCLK, CSN, KRX, KTX, HSMC, HSPC | ±20 | mA | |||
SPR, SMR | –10 | 10 | ||||
Output current, IOUT | SO | ±20 | mA | |||
REF current, IREF | REF | ±20 | mA | |||
Short-circuit current limit, ISC | ISOK | 1000 | mA | |||
Current with 510-Ω sense, IISOK | ISOK | –100 | 113.5 | mA | ||
Supply current, ICC | VDD | –20 | 50 | mA | ||
VBAT (including WSSPx current limit thresholds) | –20 | 620 | mA | |||
Repetitive avalanche energy, EAR_DQ150
(TJ = 150°C) |
Q1, 2, 3, 4 | 50 | mJ | |||
Repetitive avalanche energy, EAR_PQ150
(TJ = 150°C) |
Q5, 6, 7, 8 | 30 | mJ | |||
ISOK clamp energy, EClamp | ISOK | 20 | mJ | |||
Operating virtual-junction temperature, TJ | –40 | 175 | °C | |||
Tstg | Storage temperature range | –65 | 150 | °C |
VALUES | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per AEC Q100-002(1) | WLQx, Qx, VBAT, ISOK, DMR, SMR, WSSx, WSLSx, WSPx, WSSQx, DPR, SPR (to GND) | ±4000 | V |
Other pins | ±2000 | ||||
Charged device model (CDM), per AEC Q100-011 | Corner pins (WSP2, WSP1, SPR, CHP SO, WSSQ1, WSLS1, and WSLS2) |
±750 | |||
Other pins | ±500 |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VBAT | Supply voltage, battery | VBAT | 6 | 20 | V |
VDD | Supply voltage | VDD | 4.5 | 5.5 | V |
VIO_3.3V | Supply voltage I/O 3.3V | VIO is a 3.3-V externally supplied power | 2.8 | 3.6 | V |
VIO_5V | Supply voltage I/O 5V | VIO is a 5-V externally supplied power | 4.5 | 5.5 | V |
VIN | Input voltage | WDIN, CNT_EN, CNT_CLR, SI, SCLK, CSN, nRST, HSMC, HSPC, KTX, WLGx | 0 | VIO + 0.5 | V |
VOUT | Output voltage | Qx, WLQx | 0 | VBAT | V |
TA | Operating ambient temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPIC7218-Q1 | UNIT | |
---|---|---|---|
PFP (HTQFP) | |||
80 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 27.2 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 8.9 | °C/W |
RθJB | Junction-to-board thermal resistance | 11.1 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.3 | °C/W |
ψJB | Junction-to-board characterization parameter | 11 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 0.3 | °C/W |
PARAMETER | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|
VIH_3.3V | Input high voltage (3.3-V compatible) | WDIN, CNT_CLR, CNT_EN, HSMC, HSPC, WLGx, CSN, SI, SCLK, nRST | 2.2 | V | ||
VIL_3.3V | Input low voltage (3.3-V compatible) | WDIN, CNT_CLR, CNT_EN, HSMC, HSPC, WLGx, CSN, SI, SCLK, nRST | 0.8 | V | ||
Vhys_3.3V | Input voltage threshold hysteresis (5-V compatible) | WDIN, CNT_CLR, CNT_EN, HSMC, HSPC, WLGx, CSN, SI, SCLK, nRST | 300 | mV | ||
VIH_5V | Input high voltage (5-V compatible) | WDIN, CNT_CLR, CNT_EN, HSMC, HSPC, WLGx, CSN, SI, SCLK, nRST | 3.5 | V | ||
VIL_5V | Input low voltage (5-V compatible) | WDIN, CNT_CLR, CNT_EN, HSMC, HSPC, WLGx, CSN, SI, SCLK, nRST | 1 | V | ||
Vhys_5V | Input voltage threshold hysteresis (5-V compatible) | WDIN, CNT_CLR, CNT_EN, HSMC, HSPC, WLGx, CSN, SI, SCLK, nRST | 300 | mV | ||
IPD | Pin pulldown current, with VIN = VDD (max)(5.5 V) to VIL (min) |
WDIN, CNT_CLR, CNT_EN, HSMC, HSPC, WLGx, SI, SCLK, nRST | 5 | 20 | μA | |
Ipu_csn | CSN pullup current | –20 | –5 | μA | ||
IPD_SMR | SMR pin input current | –1 | 0 | 1 | mA |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
Ron_PWMx | On resistance | 150°C junction temperature, 6 V ≤ VBAT ≤ 20 V |
0.3 | Ω | ||
Ilim_PWMx | Current limit | 5 | A | |||
TA = –40°C | 5.5 | A | ||||
Isink_PWMx | Sink current | Qx between 1 V and 20 V | 10 | 60 | μA | |
Ileak_PWMx | Drain leakage current | VBAT = 0, VDD = 0 | 1 | μA | ||
Tsd_PWMx | Thermal shutdown junction temperature | 185 | 215 | °C | ||
VolvtDIPWMx | Open load comparator threshold voltage | 1.84 | 2.16 | V | ||
Vcl_PWMx | Active clamp voltage | 40 | 50 | V | ||
Vbvdss_PWMx | Max BVDSS voltage without active clamp | 50 | V | |||
Ineg_PWMx | Maximum negative current for 10 ms | –5 | A |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
Ron_DLSx | On resistance | 150°C junction temperature, 6 V ≤ VBAT ≤ 20 V |
0.2 | Ω | ||
Ilim_DLSx | Current limit | 6 | A | |||
Isink_DLSx | Sink current | Qx output between 1 V and 20 V | 10 | 60 | μA | |
Ileak_DLSx | Drain leakage current | VBAT = 0, VDD = 0 | 1 | μA | ||
Tsd_DLSx | Thermal shutdown junction temperature | 185 | 215 | °C | ||
Volvt_DLSx | Open load comparator threshold | 1.84 | 2.16 | V | ||
Vcl_DLSx | Active clamp voltage | 40 | 50 | V | ||
Vbvdss_DLSx | Max BVDSS voltage without active clamp | 50 | V | |||
Ineg_DLSx | Maximum negative current for 10 ms | –5 | A |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
IDMR/IDPR | Overcurrent threshold current | 60 | 75 | 90 | μA | |
VSTG | On-state short-to-ground detection voltage | 1.6 | 2 | 2.4 | V | |
ILCdet | Leakage current in SMR pin | 3 | 5 | 7 | mA | |
Ileak_SMR | Leakage current on SMR | 0 ≤ SMR ≤ 20 V, 6 V ≤ VBAT ≤ 20 V |
135 | μA | ||
IDark_DMR | Dark current | 0 ≤ DMR ≤ 20 V, VBAT = 0, VDD ≤ 0 |
2.5 | μA | ||
VFGMR/ VFGPR |
Voltage threshold FGMR in GMR pin and FGPR in GPR pin |
1.6 | 2 | 2.4 | V | |
Vgs_clamp | Voltage clamp between GMR-SMR and GPR-SPR pins | 16 | 20 | V | ||
VON | Output on voltage for GMR and GMR (each are turned on individually) | 6 V < VBAT < 7 V | VBAT + 5 | VBAT + 15 | V | |
7 V ≤ VBAT < 10 V | VBAT + 7 | VBAT + 15 | ||||
10 V ≤ VBAT < 20 V | VBAT + 10 | VBAT + 15 | ||||
7 V ≤ VBAT < 10 V | VBAT + 7 | VBAT + 15 | ||||
10 V ≤ VBAT < 20 V | VBAT + 10 | VBAT + 15 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VIL_tx | KTX input low voltage threshold | 0.3 × VDD | V | |||
VIH_tx | KTX input high voltage threshold | 0.7 × VDD | V | |||
Ipu_tx | KTX pullup current | –40 | –2 | μA | ||
VOL_rx | KRX output low voltage threshold | 0.2* × VDD | V | |||
VOH_rx | KRX output high voltage threshold | 0.8 × VDD | V | |||
Tlim | Thermal shutdown temperature | 185 | 215 | C | ||
Vhys_kln | Thermal shutdown hysteresis | 20 | 30 | C | ||
VIL_iso | ISOK input low voltage threshold | 0.4 × VBAT | V | |||
VIH_iso | ISOK input high voltage threshold | 0.7 × VBAT | V | |||
Vhys_iso | Input hysteresis | Vhys_iso = VIH_iso – VIL_iso | 0.05 × VBAT | 0.1 × VBAT | V | |
ISC_iso | Short-circuit current limit | 50 | 1000 | mA | ||
VOL_iso | Output low voltage | 0.1 × VBAT | V | |||
VOH_iso | Output high voltage | 0.95 × VBAT | V | |||
Ileak_isok | Drain leakage current | VBAT = 0, VDD = 0, ISOK = 12 V | 6 | μA |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
Ron_WLQx | On resistance | 150°C junction temperature | 4 | Ω | ||
Ilim_WLQx | Current limitation | 250 | mA | |||
Tsd_WLQx | Thermal shutdown temperature | 185 | 215 | C | ||
Thys_WLQx | Thermal shutdown hysteresis | 20 | 30 | C | ||
Isink_WLQx | Sink current | WLQx output between 1 V and 20 V | 10 | 60 | μA | |
Ileak_WLQx | Drain leakage current | VBAT = 0, VDD = 0 | 1 | μA | ||
Volvt_WLQx | Open load comparator threshold voltage | 2.3 | 2.7 | V | ||
Vcl_WLQx | Active clamp voltage | 40 | 50 | V | ||
Vbvdss_WLQx | Max BVDSS voltage without active clamp | 50 | V | |||
Ineg_WLQx | Maximum negative current for 2 ms | 5 | A |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
IVDD | Current consumption on VDD | 20 | mA | |||
IVBAT | Current consumption on VBAT | 10 | mA | |||
VurvlVDD | Undervoltage shutdown voltage | 4.5 | 4.625 | 4.75 | V | |
VuvrhVDD | Undervoltage reset threshold for microcontroller | 4.6 | 4.725 | 4.85 | V | |
VVDD_uvr_hys | Undervoltage recovery hysteresis | 50 | mV | |||
VrstVDD | Undervoltage reset voltage | 3 | V | |||
VuvVBAT | Undervoltage shutdown | 5.2 | 5.6 | 6 | V | |
VovVBAT | Overvoltage shutdown | 27 | 29 | 31 | V | |
VREF | Band-gap reference voltage | 1.25 | V | |||
External reference resistor accuracy (chip resistor) | RREF = 10 kΩ | 1% | ||||
External predriver capacitor tolerance | CCHP = 100 nF | 20% | ||||
External load capacitor for internally used VCC3 regulator | 100 pF < CVCC3 < 10 nF | 20% |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VOH | SO output threshold high voltage | VDD –1 | V | |||
VOL | SO output threshold low voltage | 0.4 | V |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VOL | WL_LS output low voltage | IOL = 20 mA , WDSTAT = ‘0’ | 0.4 | V |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
Ron_WSPx | On resistance | 150°C junction temperature | 10 | 30 | Ω | |
Ileak_WSPx | Leakage current | Switch disabled, VBAT = 18 V, | 10 | μA | ||
Irvleak_WSPx | Reverse polarity leakage current | Switch disabled, VBAT open, VWSPx=18 V | 100 | μA | ||
Ioc_WSPx | Short to ground current limitation | 50 | 150 | mA | ||
Vclamp_WSPx | Maximum output voltage | 8 | 12 | 15 | V | |
CLOAD_WSPx | Maximum capacitive load | 10 | nF |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
Ron_WSLSx | On resistance | 150°C junction temperature | 2 | 10 | Ω | |
Ileak_WSLSx | Leakage current | Switch disabled, VBAT = 18 V,VWSLSx = 18V |
200 | μA | ||
Ileak_WSSx | Leakage current | Switch disabled, VBAT = 18 V,VWSLSx = 18V |
200 | μA | ||
VREF | Reference voltage used to set WSS threshold detection | 1 | 3.3 | V | ||
VTHRESH4 | 100% threshold detection VREF / RLOAD (Intelligent Sensor) | VWSSX – VWSLSX | –10% | 1 × VREF | 10% | V |
VTHRESH3 | 50% threshold detection VREF / RLOAD (Intelligent Sensor) | VWSSX – VWSLSX | –10% | 1 × VREF | 10% | V |
100% threshold detection VREF / RLOAD (Active Sensor) | –10% | 0.5 × VREF | 10% | |||
VTHRESH2 | 25% threshold detection VREF / RLOAD (Intelligent Sensor)VWSSX – VWSLSX | VWSSX – VWSLSX | –10% | 0.25 × VREF | 10% | V |
50% threshold detection VREF / RLOAD(Active Sensor) | –10% | 0.5 × VREF | 10% | |||
VTHRESH1 | 11.25% threshold detection VREF / RLOAD (Intelligent Sensor) | VWSSX – VWSLSX | –20% | 0.1125 × VREF | 20% | V |
22.5% threshold detection VREF / RLOAD (Active Sensor) | –20% | 0.225 × VREF | 20% | |||
VWSSthresh | VTHRESH2 = VTHRESH3 = VTHRESH4 = 5 kHz, VTHRESH1= Measured | 3 WSS channels switching at 5 kHz | 40 | dB |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
Ron_WSSQx | On resistance | 150°C junction temperature | 5 | 15 | Ω | |
Ilim_WSSQx | Current limitation | 50 | mA | |||
Ileak_WSSQx | Drain leakage current | VWSSQx = 13.5 V | 20 | μA | ||
Volvt_WSSQx | Open load/Short to ground comparator threshold voltage | 1.84 | 2 | 2.16 | V | |
Cload_WSSQx | Capacitive Load (Inductive load is not supported) | 22 | nF |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VOL | RST output low voltage | IOL = 1.6 mA | 0.4 | V | ||
1 V < VDD < VurvlVDD, IOL = VDD/10 kΩ | 0.4 | V |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
fSPI | SPI operation frequency | 4 | 8 | MHz | ||
tSCLK | SCLK clock period | 125 | ns | |||
T(WH) | SCLK clock high time | 62.5 | ns | |||
T(WL) | SCLK clock low time | 62.5 | ns | |||
tSU(lead) | Setup time from falling edge of CSN to rising edge of SCLK | 62.5 | ns | |||
tSU(lag) | Setup time from falling edge of SCLK to rising edge of CSN | 62.5 | ns | |||
tpd(SDOEN) | Propagation delay from falling edge of CSN to SO valid | 50 | ns | |||
tpd(SDODIS) | Propagation delay from rising edge of CSN to SO Hi-Z state | 50 | ns | |||
tpd(valid) | Propagation delay from rising edge SCLK to SO | 0.2 V1 < SO < 0.8 V1, CL = 200 pF |
50 | ns |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
tRST | Reset response time | 5 | µs | |||
trst_delay | Delay time for reset from low to high (minimum reset hight) | 53 | 76.5 | 100 | ms | |
tVovVBAT | Overvoltage blanking time | 280 | 400 | 520 | µs | |
tVuvVBAT | Undervoltage blanking time | 280 | 400 | 520 | µs |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
tcnt_clr | CNT_CLR deglitcher duration | 4.2 | 7.8 | μs | ||
tcnt_en | CNT_EN deglitcher duration | 4.2 | 7.8 | μs |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
tFovdet | Overvoltage detection time | 280 | 400 | 520 | µs | ||
tGPRact | Overvoltage activation time | 320 | 460 | 600 | ms | ||
tOCdet | Overcurrent detection time | 560 | 800 | 1040 | µs | ||
tSTG | Short to ground detection time | 70 | 100 | 130 | µs | ||
tHSDUVBAT | HSD deglitcher time for VBAT undervoltage | 1.3 | 2.5 | µs | |||
tC1deg | Comparator deglitcher time | 4.2 | 7.8 | µs | |||
tC2deg | |||||||
tLCdet | Leakage current detection time in SMR pin | 140 | 200 | 260 | µs | ||
tDark_DMR | Time to reach dark current | After VBAT = 0 V and VDD = 0 | 300 | µs | |||
tSTGMR/
tSTGPR |
Turnon masking time(1) | 5 | 8 | ms | |||
tON1 | Turnon time | GMR = 8 nF | –6 V < VBAT < 7 V, GPR > VBAT + 4 | 0.8 | ms | ||
–7 V ≤ VBAT < 10 V, GPR > VBAT + 6 | 1.3 | ||||||
–10 V ≤ VBAT < 20 V, GPR > VBAT + 9 | 1.5 | ||||||
tON2_P | Turnon time | GPR = 16 nF, GMR, GPR turn ON together |
–6 V < VBAT < 7 V, GPR > VBAT + 4 | 2 | ms | ||
–7 V ≤ VBAT < 10 V, GPR > VBAT + 6 | 2.8 | ||||||
–10 V ≤ VBAT < 20 V, GPR > VBAT + 9 | 3.3 | ||||||
tON2_S | Turnon time | GPR = 16 nF, GPR turnon only |
–6 V < VBAT < 7 V, GPR > VBAT + 4 | 1.1 | ms | ||
–7 V ≤ VBAT < 10 V, GPR > VBAT + 6 | 1.5 | ||||||
–10 V ≤ VBAT < 20 V, GPR > VBAT + 9 | 1.8 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
tosoff_DLSx | Open load comparator deglitcher | 140 | 200 | 260 | μs | |
tr/tf_DLSx | Rise time/fall time | From 10% to 90% | 10 | 50 | μs | |
td_on_DLSx | Turnon/turnoff delay time | From CSN going high to digital LSD turning off or turning on | 70 | μs | ||
td_off_DLSx | ||||||
toff_blank_DLSx | Blank time before output shutdown in current limitation | 140 | 200 | 260 | μs | |
toff_tmp_DLSx | Blank time before output shutdown in overtemperature | 140 | 200 | 260 | μs |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
tosoff_PWMx | Open load comparator deglitcher time | 140 | 200 | 260 | μs | |
tr/tf_PWMx | Rise time/fall time | From 10% to 90% | 30 | 500 | ns | |
td_on_PWMx | Turnon delay time | From CSN going high to PWM LSD turning off | 10 | μs | ||
td_off_PWMx | Turnoff delay time | From CSN going high to PWM LSD turning off | 2.25 | μs | ||
toff_blank_PWMx | Blank time before output shutdown in case of current limitation | 5 | 6 | 7 | μs | |
toff_tmp_PWMx | Blank time before output shutdown during overtemperature | 140 | 200 | 260 | μs |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
ft_rx ft_tx ft_iso | Transmission frequency | KRX, KTX, ISOK, RISO = 510 Ω, CISO = 1.3 nF |
50 | 100 | kHz | |
tfall_tx_iso | Fall time (20% to 80% of ISOK ) | RISO = 510 Ω to VBAT, CISO = 10 nF to GND |
2 | μs | ||
trise_tx_iso | Rise time (80% to 20% of ISOK) | RISO = 510 Ω to VBAT, CISO = 10 nF to GND |
15 | μs | ||
tpd_tx_iso | ISOK propagation delay | High to low, RISO = 510 Ω, CISO = 10 nF |
6 | μs | ||
Low to high, RISO = 510 Ω, CISO = 10 nF |
6 | |||||
toff_iso_rx | Turnoff propagation delay time | RISO = 510 Ω, CISO = 10 nF | 17 | μs | ||
toff_tx_iso | ||||||
ton_iso_rx | Turnon propagation delay time | RISO = 510 Ω, CISO = 10 nF | 4 | μs | ||
ton_tx_iso | ||||||
toff_kln | Blank time for overtemperature(1) | 140 | 200 | 260 | μs | |
ton_kln | ||||||
toff_isok | Cumulative blank time before shutdown for overcurrent | 15 | 20 | 25 | μs |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
tosoff_WLQx | Open-load comparator deglitcher time | 140 | 200 | 260 | μs | |
tr_WLQx | Rise time/fall time | From 10% to 90% | 60 | μs | ||
tf_WLQx | ||||||
td_on_WLQx | Turnon/turnoff delay time | 25 | μs | |||
td_off_WLQx | ||||||
toff_blank_WLQx | Blank time for overcurrent /short battery sensing | 8 | 10 | 12 | μs | |
toff_tmp_WLQx | ||||||
ton_tmp_WLQx | Blank time in case of overtemperature | 140 | 200 | 260 | μs |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
TWD | Watchdog window | Upper window (WDH<1:0>) | –10% | programmable | 10% | ms |
Lower window (WDL<1:0>) | 10% | programmable | 10% | |||
Out-of-range window (2 × WDH<1:0>) | 10% | programmable | 10% | |||
TWD_PULSE | Watchdog induced reset pulse | Watchdog out-of-range (counter stays at 000) | 1 | 1.5 | 2 | ms |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
trise_WSPx | Propagation delay from rising edge of CSN to the rising and falling edge of WSPx. | 20 mA load, Cload = 10 nF | 100 | μs | ||
tfall_WSP | ||||||
trise_WSLSx | Propagation delay from rising edge of CSN to rising and falling edge of WSLSx | 50-mA load | 50 | μs | ||
tfall_WSLSx | ||||||
trise_WSSQx | Propagation delay from rising edge of CSN to rising and falling edge of WSSQx | 50 mA load, C = 200 pF | 50 | μs | ||
tfall_WSSQx |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
tdelay_WSPx | Delay time for fault reporting | 80 | 100 | 120 | μs |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
Tdelay_WSSQx | Delay time for overcurrent fault reporting | 15 | 20 | 25 | µs | |
Delay time for open load fault reporting | 140 | 200 | 260 | µs |