ZHCSLP7C December   2019  – February 2021 TPD4S311 , TPD4S311A

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings—JEDEC Specification
    3. 7.3 ESD Ratings—IEC Specification
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Thermal Information
    6. 7.6 Electrical Characteristics
    7. 7.7 Timing Requirements
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 4-Channels of Short-to-VBUS Overvoltage Protection (CC1, CC2, SBU1, SBU2 Pins ): 24-VDC Tolerant
      2. 8.3.2 4-Channels of IEC 61000-4-2 ESD Protection (CC1, CC2, SBU1, SBU2 Pins)
      3. 8.3.3 CC1, CC2 Overvoltage Protection FETs 400-mA or 600-mA Capable for Passing VCONN Power
      4. 8.3.4 CC Dead Battery Resistors Integrated for Handling the Dead Battery Use Case in Mobile Devices
      5. 8.3.5 1.69-mm × 1.69-mm DSBGA Package
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 VBIAS Capacitor Selection
        2. 9.2.2.2 Dead Battery Operation
        3. 9.2.2.3 CC Line Capacitance
        4. 9.2.2.4 Additional ESD Protection on CC and SBU Lines
        5. 9.2.2.5 FLT Pin Operation
        6. 9.2.2.6 How to Connect Unused Pins
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 静电放电警告
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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9.2.2.4 Additional ESD Protection on CC and SBU Lines

If additional IEC ESD protection is desired to be placed on either the CC or SBU lines, it is important that high-voltage ESD protection diodes be used. The maximum DC voltage that can be seen in USB PD is 21-VBUS, with 21.5 V allowed during voltage transitions. Therefore, an ESD protection diode must have a reverse stand off voltage higher than 21.5 V in order to guarantee the diode does not breakdown during a short-to-VBUS event and have large amounts of current flowing through it indefinitely, destroying the diode. A reverse stand off voltage of 24 V is recommended to give margin above 21.5 V in case USB Type-C power adaptors are released in the market which break the USB Type-C specification.

Furthermore, due to the fact that the Short-to-VBUS event applies a DC voltage to the CC and SBU pins, a deep-snap-back diode cannot be used unless its minimum trigger voltage is above 42 V. During a Short-to-VBUS event, RLC ringing of up to 2x the settling voltage can be exposed to CC and SBU, allowing for up to 42 V to be exposed. Furthermore, if any capacitor derates on the CC or SBU line, greater than 2x ringing can occur. Since this ringing is hard to bound, it is recommended to not use deep-snap-back diodes. If the deep-snap-back diode triggers during the short-to-VBUS hot-plug event, it begins to operate in its conduction region. With a 20-VBUS source present on the CC or SBU line, this allows the diode to conduct indefinitely, destroying the diode.