ZHCSAT5F January   2013  – January 2015 TPD4S214

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 简化电路原理图
  5. 5 修订历史记录
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Thermal Shutdown
    6. 7.6  Electrical Characteristics for EN, FLT, DET, D+, D-, VBUS, ID Pins
    7. 7.7  Electrical characteristics for UVLO / OVLO
    8. 7.8  Electrical Characteristics for DET Circuits
    9. 7.9  Electrical Characteristics for OTG Switch
    10. 7.10 Electrical Characteristics for Current Limit and Short Circuit Protection
    11. 7.11 Supply Current Consumption
    12. 7.12 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Input Voltage Protection at VBUS from -7 V to 30 V
      2. 8.3.2  IEC 61000-4-2 Level 4 ESD Protection
      3. 8.3.3  Low RDS(ON) N-CH FET Switch for High Efficiency
      4. 8.3.4  Compliant with USB2.0 and USB3.0 OTG spec
      5. 8.3.5  User Adjustable Current Limit From 250 mA to Beyond 1.2 A
      6. 8.3.6  Built-in Soft-start
      7. 8.3.7  Reverse Current Blocking
      8. 8.3.8  Over Voltage Lock Out for VBUS
      9. 8.3.9  Under Voltage Lock Out for VOTG_IN
      10. 8.3.10 Thermal Shutdown and Short Circuit Protection
      11. 8.3.11 Auto Retry on any Fault; no Latching off States
      12. 8.3.12 Integrated VBUS Detection Circuit
      13. 8.3.13 Low Capacitance TVS ESD Clamp for USB2.0 High Speed Data Rate
      14. 8.3.14 Internal 16ms Startup Delay
      15. 8.3.15 Space Saving WCSP (12-YFF) Package
      16. 8.3.16 Inrush Current Protection
      17. 8.3.17 Input Capacitor (Optional)
      18. 8.3.18 Output Capacitor (Optional)
      19. 8.3.19 Current Limit
      20. 8.3.20 Thermal Shutdown
      21. 8.3.21 VBUS Detection
      22. 8.3.22 Test Configuration
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 USB 2.0 Without Using On-chip VBUS Detect
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 USB 2.0 Using On-chip VBUS Detect
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 USB 3.0 Without Using On-chip VBUS Detect
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档　
    2. 12.2 商标
    3. 12.3 静电放电警告
    4. 12.4 术语表
  13. 13机械封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YFF|12
散热焊盘机械数据 (封装 | 引脚)
订购信息

12 器件和文档支持

12.1 文档支持

12.1.1 相关文档　

OTG 和 EH 补充协议：USB 版本 2.0 规范的 On-The-Go 和嵌入式主机补充协议，2011 年 7 月 14 日。www.usb.org

12.2 商标

All other trademarks are the property of their respective owners.

12.3 静电放电警告

esds-image

这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损伤。

12.4 术语表

SLYZ022 — TI 术语表。

这份术语表列出并解释术语、首字母缩略词和定义。