ZHCSAP5D December   2012  – October 2023 TPD4E1B06

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Ultra Low Leakage Current 0.5 nA (Maximum)
      2. 7.3.2 Transient Protection for 4 I/O Lines
      3. 7.3.3 I/O Capacitance 0.7 pF (Typical)
      4. 7.3.4 Bi-Directional (ESD) Protection Diode Array
      5. 7.3.5 Low ESD Clamping Voltage
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range on IO1, IO2, IO3, and IO4 Pins
        2. 8.2.2.2 Operating Frequency
      3. 8.2.3 Application Curves
    3. 8.3 Layout
      1. 8.3.1 Layout Guidelines
      2. 8.3.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 接收文档更新通知
    2. 9.2 支持资源
    3. 9.3 Trademarks
    4. 9.4 静电放电警告
    5. 9.5 术语表
  11. 10Mechanical, Packaging, and Orderable Information

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7.4 Device Functional Modes

TPD4E1B06 is a passive integrated circuit that activates whenever fast transient voltages above VBR or below –VBR are present on the circuit being protected. During ESD events, voltages as high as ±12 kV can be directed to ground through the internal diode network. Once the voltages on the protected line fall below the trigger levels of TPD4E1B06 (usually within 10’s of nano-seconds) the device reverts to passive.