ZHCSCF2B July 2013 – April 2014 TPD4E110
PRODUCTION DATA.
8 Detailed Description
8.1 Overview
TPD4E110DPW is a uni-directional ESD protection device with ultra-low capacitance. The device is constructed with a central ESD clamp that features two hiding diodes per channel to reduce the capacitive loading. Each channel is rated to dissipate ESD strikes above the maximum level specified in the IEC61000-4-2 level 4 international standard. The TPD4E110DPW's ultra-low loading capacitance makes the device ideal for protecting high-speed signal terminals. The 0.8 mm x 0.8 mm package is designed for space saving designs. The pinout allows for straight through routing of 2 differential pairs when PCB manufacturing which feature sizes of 2.8 mils (0.071 mm).
8.2 Functional Block Diagram
8.3 Feature Description
TPD4E110 is a uni-directional Electrostatic Discharge (ESD) protection device with ultra-low capacitance. The device is constructed with a central ESD clamp that features two hiding diodes per line to reduce the capacitive loading. Each line is rated to dissipate ESD strikes above the maximum level specified in the IEC61000-4-2 level 4 international standard. The TPD4E110's ultra-low loading capacitance makes it ideal for protecting high-speed signal terminals.
8.4 Device Functional Modes
TPD4E110 is a passive integrated circuit that activates whenever voltages above VBR or below the lower diodes Vforward (–0.6V) are present upon the circuit being protected. During ESD events, voltages as high as ±15 kV can be directed to ground via the internal diode network. Once the voltages on the protected line fall below the trigger levels of TPD4E110 (usually within 10’s of nano-seconds) the device reverts to passive.