SLVS615F July   2006  – December 2016 TPD4E002

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—JEDEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range on I/O1 Through I/O2
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
TJ Junction temperature 125 °C
Top Operating temperature –40 125 °C
Tstg Storage temperature –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings—JEDEC Specification

VALUE UNIT
V(ESD) Electrostatic discharge IEC 61000-4-2 contact discharge ±15000 V
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 ESD Ratings—IEC Specification

VALUE UNIT
Ipp Peak pulse current IEC 61000-4-5 (tp = 8/20 μs) 2.5 A
Ppp Peak pulse power IEC 61000-4-5 (tp = 8/20 μs) 25 W

6.4 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VI/O Operating voltage 0 5 V
Operating temperature –40 125 °C

6.5 Thermal Information

THERMAL METRIC(1) TPD4E002 UNIT
DRL (SOT)
5 PINS
RθJA Junction-to-ambient thermal resistance 220 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 80.3 °C/W
RθJB Junction-to-board thermal resistance 42.9 °C/W
ψJT Junction-to-top characterization parameter 3.2 °C/W
ψJB Junction-to-board characterization parameter 42.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.6 Electrical Characteristics

Tamb = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VBR I/O breakdown voltage IR = 1 mA 6.1 7.2 V
IRM I/O leakage current VRM = 3 V 0.1 μA
αT Voltage temperature coefficient 4.5 mV/°C
C I/O capacitance per line 11 pF
Rd Dynamic resistance(1) 2 Ω
(1) Rd is measured under reverse breakdown condition with inrush current in the range of 1 A using pulse techniques.

6.7 Typical Characteristics

TPD4E002 cap_ta_lvs615.gif Figure 1. I/O Capacitance vs Temperature
TPD4E002 iv_ic_lvs615.gif Figure 3. Diode Current Across I/O Voltage (Typical Values)
TPD4E002 cap_freq_lvs615.gif Figure 2. I/O Capacitance vs Frequency (Typical Values)