ZHCSLO9F July   2020  – July 2024 TMUX7208 , TMUX7209

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Thermal Information
    4. 6.4  Recommended Operating Conditions
    5. 6.5  Source or Drain Continuous Current
    6. 6.6  ±15 V Dual Supply: Electrical Characteristics 
    7. 6.7  ±15 V Dual Supply: Switching Characteristics 
    8. 6.8  ±20 V Dual Supply: Electrical Characteristics
    9. 6.9  ±20 V Dual Supply: Switching Characteristics
    10. 6.10 44 V Single Supply: Electrical Characteristics 
    11. 6.11 44 V Single Supply: Switching Characteristics 
    12. 6.12 12 V Single Supply: Electrical Characteristics 
    13. 6.13 12 V Single Supply: Switching Characteristics 
    14. 6.14 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1  On-Resistance
    2. 7.2  Off-Leakage Current
    3. 7.3  On-Leakage Current
    4. 7.4  Transition Time
    5. 7.5  tON(EN) and tOFF(EN)
    6. 7.6  Break-Before-Make
    7. 7.7  tON (VDD) Time
    8. 7.8  Propagation Delay
    9. 7.9  Charge Injection
    10. 7.10 Off Isolation
    11. 7.11 Crosstalk
    12. 7.12 Bandwidth
    13. 7.13 THD + Noise
    14. 7.14 Power Supply Rejection Ratio (PSRR)
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional Operation
      2. 8.3.2 Rail-to-Rail Operation
      3. 8.3.3 1.8V Logic Compatible Inputs
      4. 8.3.4 Integrated Pull-Down Resistor on Logic Pins
      5. 8.3.5 Fail-Safe Logic
      6. 8.3.6 Latch-Up Immune
      7. 8.3.7 Ultra-Low Charge Injection
    4. 8.4 Device Functional Modes
    5. 8.5 Truth Tables
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

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7.9 Charge Injection

The TMUX7208 has a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QINJ. Figure 7-9 shows the setup used to measure charge injection from source (Sx) to drain (D).

The TMUX7208 and have a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QINJ. Figure 7-9 shows the setup used to measure charge injection from source (Sx) to drain (D).

TMUX7208 TMUX7209 Charge-Injection Measurement Setup Figure 7-9 Charge-Injection Measurement Setup