ZHCSK42 August   2019 TMUX1247

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      应用示例
      2.      TMUX1247 方框图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics (VDD = 5 V ±10 %), GND = 0 V unless otherwise specified.
    6. 6.6 Electrical Characteristics (VDD = 3.3 V ±10 %), GND = 0 V unless otherwise specified.
    7. 6.7 Electrical Characteristics (VDD = 1.8 V ±10 %), GND = 0 V unless otherwise specified.
    8. 6.8 Electrical Characteristics (VDD = 1.2 V ±10 %), GND = 0 V unless otherwise specified.
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 On-Resistance
    2. 7.2 Off-Leakage Current
    3. 7.3 On-Leakage Current
    4. 7.4 Transition Time
    5. 7.5 Break-Before-Make
    6. 7.6 Charge Injection
    7. 7.7 Off Isolation
    8. 7.8 Crosstalk
    9. 7.9 Bandwidth
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional Operation
      2. 8.3.2 Rail to Rail Operation
      3. 8.3.3 1.8 V Logic Compatible Inputs
      4. 8.3.4 Fail-Safe Logic
    4. 8.4 Device Functional Modes
    5. 8.5 Truth Tables
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Input Control for Power Amplifier
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Switchable Operational Amplifier Gain Setting
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Layout Information
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档
    2. 12.2 接收文档更新通知
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.8 Electrical Characteristics (VDD = 1.2 V ±10 %), GND = 0 V unless otherwise specified.

at TA = 25°C, VDD = 1.2 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = 0 V to VDD
IDS = 10 mA		 25°C 70 Ω
–40°C to +85°C 105 Ω
–40°C to +125°C 105 Ω
ΔRON On-resistance matching between channels VS = 0 V to VDD
IDS = 10 mA		 25°C 0.4 Ω
–40°C to +85°C 1.5 Ω
–40°C to +125°C 1.5 Ω
IS(OFF) Source off leakage current(1) VDD = 1.32 V
Switch Off
VD = 1.2 V / 1 V
VS = 1 V / 1.2 V		 25°C ±75 nA
–40°C to +85°C –150 150 nA
–40°C to +125°C –175 175 nA
ID(ON)
IS(ON) 		Channel on leakage current VDD = 1.32 V
Switch On
VD = VS = 1 V / 0.8 V		 25°C ±200 nA
–40°C to +85°C –500 500 nA
–40°C to +125°C –750 750 nA
DIGITAL INPUTS
VIH Input logic high –40°C to +125°C 0.96 V
VIL Input logic low –40°C to +125°C 0.36 V
IIH
IIL 		Input leakage current 25°C ±0.005 µA
IIH
IIL 		Input leakage current –40°C to +125°C ±0.10 µA
CIN Digital input capacitance 25°C 1 pF
CIN Digital input capacitance –40°C to +125°C 2 pF
POWER SUPPLY
IDD VDD supply current Digital Inputs = 0 V or 5.5 V 25°C 0.0015   µA
–40°C to +125°C 0.45 µA
DYNAMIC CHARACTERISTICS
tTRAN Switching time between channels VIN = VDD
VS = 1 V
RL = 200 Ω, CL = 15 pF		 25°C   40 ns
–40°C to +85°C   175 ns
–40°C to +125°C     175 ns
tOPEN (BBM) Break before make time VS = 1 V
RL = 200 Ω, CL = 15 pF		 25°C   27 ns
–40°C to +85°C 1     ns
–40°C to +125°C 1     ns
QC Charge Injection VS = (VDD + VSS)/2
RS = 0 Ω, CL = 1 nF		 25°C   ±5 pC
OISO Off Isolation RL = 50 Ω, CL = 5 pF
f = 1 MHz		 25°C   -64   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz		 25°C   -44   dB
XTALK Crosstalk RL = 50 Ω, CL = 5 pF
f = 1 MHz		 25°C   -64   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz		 25°C   -44   dB
BW Bandwidth RL = 50 Ω, CL = 5 pF 25°C 250 MHz
CSOFF Source off capacitance f = 1 MHz 25°C 7 pF
CSON
CDON 		On capacitance f = 1 MHz 25°C 23 pF
(1) When VS is 1 V, VD is 1.2 V or when VS is 1.2 V, VD is 1 V.