ZHCSJM4A April   2019  – October 2019 TMUX1204

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      应用示例
      2.      TMUX1204 方框图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics (VDD = 5 V ±10 %)
    6. 6.6 Electrical Characteristics (VDD = 3.3 V ±10 %)
    7. 6.7 Electrical Characteristics (VDD = 1.8 V ±10 %)
    8. 6.8 Electrical Characteristics (VDD = 1.2 V ±10 %)
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1  On-Resistance
    2. 7.2  Off-Leakage Current
    3. 7.3  On-Leakage Current
    4. 7.4  Transition Time
    5. 7.5  Break-Before-Make
    6. 7.6  tON(EN) and tOFF(EN)
    7. 7.7  Charge Injection
    8. 7.8  Off Isolation
    9. 7.9  Crosstalk
    10. 7.10 Bandwidth
  8. 8 Detailed Description
    1. 8.1 Functional Block Diagram
    2. 8.2 Feature Description
      1. 8.2.1 Bidirectional Operation
      2. 8.2.2 Rail to Rail Operation
      3. 8.2.3 1.8 V Logic Compatible Inputs
      4. 8.2.4 Fail-Safe Logic
    3. 8.3 Device Functional Modes
    4. 8.4 Truth Tables
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
    3. 9.3 Design Requirements
    4. 9.4 Detailed Design Procedure
    5. 9.5 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Layout Information
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档
    2. 12.2 接收文档更新通知
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.7 Charge Injection

The TMUX1204 has a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QC. Figure 13 shows the setup used to measure charge injection from source (Sx) to drain (D).

TMUX1204 Charge_Injection.gifFigure 13. Charge-Injection Measurement Setup