ZHCSJ88C December   2018  – February 2024 TMUX1119

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics (VDD = 5V ±10 %)
    6. 5.6 Electrical Characteristics (VDD = 3.3V ±10 %)
    7. 5.7 Electrical Characteristics (VDD = 1.8V ±10 %)
    8. 5.8 Electrical Characteristics (VDD = 1.2V ±10 %)
    9.     Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 On-Resistance
    2. 6.2 Off-Leakage Current
    3. 6.3 On-Leakage Current
    4. 6.4 Transition Time
    5. 6.5 Break-Before-Make
    6. 6.6 Charge Injection
    7. 6.7 Off Isolation
    8. 6.8 Crosstalk
    9. 6.9 Bandwidth
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Bidirectional Operation
      2. 7.3.2 Rail to Rail Operation
      3. 7.3.3 1.8V Logic Compatible Inputs
      4. 7.3.4 Fail-Safe Logic
      5. 7.3.5 Ultra-Low Leakage Current
      6. 7.3.6 Ultra-Low Charge Injection
    4. 7.4 Device Functional Modes
    5. 7.5 Truth Tables
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 术语表
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.6 Electrical Characteristics (VDD = 3.3V ±10 %)

At TA = 25°C, VDD = 3.3V (unless otherwise noted).
PARAMETERTEST CONDITIONSTAMINTYPMAXUNIT
ANALOG SWITCH
RONOn-resistanceVS = 0V to VDD
ISD = 10mA
Refer to Section 6.1		25°C3.78.8Ω
–40°C to +85°C9.5Ω
–40°C to +125°C9.8Ω
ΔRONOn-resistance matching between channelsVS = 0V to VDD
ISD = 10mA
Refer to Section 6.1		25°C0.13Ω
–40°C to +85°C0.4Ω
–40°C to +125°C0.5Ω
RON FLATOn-resistance flatnessVS = 0V to VDD
ISD = 10mA
Refer to Section 6.1		25°C1.9Ω
–40°C to +85°C2Ω
–40°C to +125°C2.2Ω
IS(OFF)Source off leakage current(1)VDD = 3.3V
Switch Off
VD = 3V / 1V
VS = 1V / 3V
Refer to Section 6.2		25°C–0.05±0.0010.05nA
–40°C to +85°C–0.10.1nA
–40°C to +125°C–0.50.5nA
ID(ON)
IS(ON)		Channel on leakage currentVDD = 3.3V
Switch On
VD = VS = 3V / 1V
Refer to Section 6.3		25°C–0.1±0.0050.1nA
–40°C to +85°C–0.350.35nA
–40°C to +125°C–22nA
LOGIC INPUTS (SEL)
VIHInput logic high–40°C to +125°C1.355.5V
VILInput logic low–40°C to +125°C00.8V
IIH
IIL		Input leakage current25°C ±0.005 µA
IIH
IIL		Input leakage current-40°C to 125°C  ±0.05µA
CINLogic input capacitance25°C 1pF
CINLogic input capacitance–40°C to +125°C 2pF
POWER SUPPLY
IDDVDD supply currentLogic inputs = 0V or 5.5V25°C0.003µA
–40°C to +125°C0.8µA
DYNAMIC CHARACTERISTICS
tTRANSwitching time between channelsVS = 2V
RL = 200Ω, CL = 15pF
Refer to Section 6.4		25°C 14ns
–40°C to +85°C  20ns
–40°C to +125°C  21ns
tOPEN (BBM)Break before make timeVS = 2V
RL = 200Ω, CL = 15pF
Refer to Section 6.5		25°C 9ns
–40°C to +85°C1 ns
–40°C to +125°C1 ns
QCCharge InjectionVD = 1V
RS = 0Ω, CL = 1 nF
Refer to Section 6.6		25°C –6 pC
OISOOff IsolationRL = 50Ω, CL = 5pF
f = 1MHz
Refer to Section 6.7		25°C –65 dB
RL = 50Ω, CL = 5pF
f = 10MHz
Refer to Section 6.7		25°C –45 dB
XTALKCrosstalkRL = 50Ω, CL = 5pF
f = 1MHz
Refer to Section 6.8		25°C –65 dB
RL = 50Ω, CL = 5pF
f = 10MHz
Refer to Section 6.8		25°C –45 dB
BWBandwidthRL = 50Ω, CL = 5pF
Refer to Section 6.9		25°C 250 MHz
CSOFFSource off capacitancef = 1MHz25°C 6 pF
CSON
CDON		On capacitancef = 1MHz25°C 20 pF
(1) When VS is 3V, VD is 1V, and vice versa.