ZHCSCD3B April   2014  – August 2014 TMP75C

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Digital Temperature Output
      2. 7.3.2 Temperature Limits and Alert
      3. 7.3.3 Serial Interface
        1. 7.3.3.1 Bus Overview
        2. 7.3.3.2 Serial Bus Address
        3. 7.3.3.3 Writing and Reading Operation
        4. 7.3.3.4 Slave Mode Operations
          1. 7.3.3.4.1 Slave Receiver Mode:
          2. 7.3.3.4.2 Slave Transmitter Mode:
        5. 7.3.3.5 High-Speed (Hs) Mode
        6. 7.3.3.6 Timeout Function
        7. 7.3.3.7 Two-Wire Timing
        8. 7.3.3.8 Two-Wire Timing Diagrams
    4. 7.4 Device Functional Modes
      1. 7.4.1 Continuous-Conversion Mode
      2. 7.4.2 Shutdown Mode
      3. 7.4.3 One-Shot Mode
    5. 7.5 Programming
    6. 7.6 Register Map
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档　
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 术语表
  12. 12机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

11 器件和文档支持

11.1 文档支持

11.1.1 相关文档　

SBOU141 — 《TMP75xEVM 用户指南》

11.2 Trademarks

All other trademarks are the property of their respective owners.

11.3 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.4 术语表

SLYZ022 — TI 术语表。

这份术语表列出并解释术语、首字母缩略词和定义。