ZHCSG42B March   2017  – February 2020 TCA9803

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化原理图
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Integrated Current Source
      2. 9.3.2 Ultra-Low Power Consumption
      3. 9.3.3 No Static-Voltage Offset
      4. 9.3.4 Active-High Repeater Enable Input
      5. 9.3.5 Powered Off High Impedance I2C Bus Pins on A-Side
      6. 9.3.6 Powered-Off Back-Power Protection for I2C Bus Pins
      7. 9.3.7 Clock Stretching and Multiple Master Arbitration Support
    4. 9.4 Device Functional Modes
      1. 9.4.1 Device Operation Considerations
        1. 9.4.1.1 B-Side Input Low (VIL/IILC/RILC)
          1. 9.4.1.1.1 VILC & IILC
          2. 9.4.1.1.2 RILC
        2. 9.4.1.2 Input and Output Leakage Current (IEXT-I/IEXT-O)
          1. 9.4.1.2.1 IEXT-I
          2. 9.4.1.2.2 IEXT-O
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Device Selection Guide
      2. 10.1.2 Special Considerations for the B-side
        1. 10.1.2.1 FET or Pass-Gate Translators
        2. 10.1.2.2 Buffered Translators/Level-shifters
    2. 10.2 Typical Application
      1. 10.2.1 Single Device
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
        3. 10.2.1.3 Application Curves
      2. 10.2.2 Buffering Without Level-Shifting
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
        3. 10.2.2.3 Application Curve
      3. 10.2.3 Parallel Device Use Case
        1. 10.2.3.1 Design Requirements
        2. 10.2.3.2 Detailed Design Procedure
        3. 10.2.3.3 Application Curves
      4. 10.2.4 Series Device Use Case
        1. 10.2.4.1 Design Requirements
        2. 10.2.4.2 Detailed Design Procedure
        3. 10.2.4.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 文档支持
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 商标
    5. 13.5 静电放电警告
    6. 13.6 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

13.5 静电放电警告

esds-image

ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可能会损坏集成电路。

ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可能会导致器件与其发布的规格不相符。