ZHCSEG3C September   2015  – July 2016 SN65DP149 , SN75DP149

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 说明 （续）
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Supply Electrical Characteristics
    6. 7.6  Differential Input Electrical Characteristics
    7. 7.7  HDMI and DVI TMDS Output Electrical Characteristics
    8. 7.8  DDC, and I2C Electrical Characteristics
    9. 7.9  HPD Electrical Characteristics
    10. 7.10 HDMI and DVI Main Link Switching Characteristics
    11. 7.11 HPD Switching Characteristics
    12. 7.12 DDC and I2C Switching Characteristics
    13. 7.13 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Reset Implementation
      2. 9.3.2 Operation Timing
      3. 9.3.3 Input Lane Swap and Polarity Working
      4. 9.3.4 Main Link Inputs
      5. 9.3.5 Main Link Inputs Debug Tools
      6. 9.3.6 Receiver Equalizer
      7. 9.3.7 Termination Impedance Control
      8. 9.3.8 TMDS Outputs
        1. 9.3.8.1 Pre-Emphasis/De-Emphasis
    4. 9.4 Device Functional Modes
      1. 9.4.1 Retimer Mode
      2. 9.4.2 Redriver Mode
      3. 9.4.3 DDC Functional Description
    5. 9.5 Register Maps
      1. 9.5.1 DP-HDMI Adaptor ID Buffer
      2. 9.5.2 Local I2C Interface Overview
      3. 9.5.3 I2C Control Behavior
      4. 9.5.4 I2C Control and Status Registers
        1. 9.5.4.1 Bit Access Tag Conventions
        2. 9.5.4.2 CSR Bit Field Definitions
          1. 9.5.4.2.1 ID Registers
          2. 9.5.4.2.2 Misc Control
          3. 9.5.4.2.3 HDMI Control
          4. 9.5.4.2.4 Equalization Control Register
          5. 9.5.4.2.5 EyeScan Control Register
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Use Case of SNx5DP149
      2. 10.1.2 DDC Pullup Resistors
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
    3. 10.3 System Example
      1. 10.3.1 Compliance Testing
  11. 11Power Supply Recommendations
    1. 11.1 Power Management
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Thermal Considerations
  13. 13器件和文档支持
    1. 13.1 相关链接
    2. 13.2 文档支持
      1. 13.2.1 相关文档
    3. 13.3 接收文档更新通知
    4. 13.4 社区资源
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature (unless otherwise noted) (1)(2)
MIN MAX UNIT
Supply voltage(3) VCC –0.3 4 V
VDD –0.3 1.4 V
Voltage Main link input (IN_Dx AC-coupled mode) 1.56 V
TMDS outputs ( OUT_Dx) –0.3 4 V
HPD_SRC, Vsadj, SDA_CTL, SCL_CTL, OE, HDMI_SEL/A1, EQ_SEL/A0, I2C_EN/PIN, SLEW_CTL, SDA_SRC, SCL_SRC –0.3 4 V
HPD_SNK, SDA_SNK, SCL_SNK –0.3 6 V
Continuous power dissipation See Thermal Information
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential voltages, are with respect to network ground terminal.
(3) Tested in accordance with JEDEC Standard 22, Test Method A114-B.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
GENERAL PARAMETERS
VCC Supply voltage 3 3.3 3.6 V
VDD 1.00 1.1 1.27
TCASE Case temperature for RSB package 93.5 °C
TA Operating free-air temperature SN75DP149 0 85 °C
SN65DP149 –40 85
MAIN LINK DIFFERENTIAL PINS
VID_PP Peak-to-peak input differential voltage 75 1200 mv
VIC Input common mode voltage 0 2 V
CAC AC coupling capacitance 75 100 200 nF
dR Data rate 0.25 5 Gbps
Vsadj TMDS-compliant swing voltage bias resistor 6.5 kΩ
CONTROL PINS
VI-DC DC input voltage –0.3 3.6 V
VIL(1) Low-level input voltage at OE 0.8 V
Low-level input voltage at SLEW_CTL, PRE_SEL, EQ_SEL/A0, SWAP/POL 0.3
VIM(1) No connect input voltage at SLEW_CTL, PRE_SEL, EQ_SEL/A0, SWAP/POL 1 1.2 1.4 V
VIH(1) High-level input voltage at SLEW_CTL, OE(2) , PRE_SEL, EQ_SEL/A0, SWAP/POL 2.6 V
VOL Low-level output voltage 0.4 V
VOH High-level output voltage 2.4 V
IIH High-level input current –30 30 µA
IIL Low-level input current –10 10 µA
IOS Short circuit output current –50 50 mA
IOZ High impedance output current 10 µA
ROEPU Pullup resistance on OE pin 150 250 kΩ
(1) These values are based upon a microcontroller driving the control pins. The pullup/pulldown/floating resistor configuration will set the internal bias to the proper voltage level which will not match the values shown here.
(2) This value is based upon a microcontroller driving the OE pin. A passive reset circuit using an external capacitor and the internal pullup resistor will set OE pin properly, but may have a different value than shown due to internal biasing.

7.4 Thermal Information

over operating free-air temperature range (unless otherwise noted)
THERMAL METRIC(1) SNx5DP149 UNIT
RSB (WQFN)
40 PINS
RθJA Junction-to-ambient thermal resistance 37.3 °C/W
RθJB Junction-to-board thermal resistance (High-K board(2)) 9.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance (High-K board(2)) 23.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.2 °C/W
ψJT Junction-to-top characterization parameter 0.3 °C/W
ψJB Junction-to-case (bottom) thermal resistance 3.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) Test conditions for ΨJB and ΨJT are clarified in TI document Semiconductor and IC Package Thermal Metrics.

7.5 Power Supply Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
PD1 Device power dissipation (retimer mode) OE = H, HDMI_SEL = L, VCC = 3.3/3.6-V, VDD = 1.1/1.27-V, VSadj = 6.5-kΩ
IN_Dx: VID_PP = 1200-mV, 3.4-Gbps TMDS pattern
AUX: VI = 3.3-V
I2C_EN/PIN = L, PRE_SEL= H, IN_EQ_CTL= H, SDA_CTL/CLK_CTL = 0-V		 390 510 mW
PD2 Device power dissipation (redriver mode) OE = H, HDMI_SEL = L, VCC = 3.3/3.6-V, VDD = 1.1/1.27-V, VSadj = 6.5-kΩ
IN_Dx: VID_PP = 1200-mV, 3.4-Gbps TMDS pattern
AUX: VI = 3.3-V
I2C_EN/PIN = L, PRE_SEL= H, IN_EQ_CTL= H, SDA_CTL/CLK_CTL = 0-V		 225 350 mW
PSD1 Device power with shut down OE = L OE = L, VCC = 3.3/3.6 V, VDD = 1.1/1.27 V, VSadj = 7.06 kΩ 5 15 mW
IDD1 VDD Supply current (TMDS 3.4-Gpbs retimer mode) OE = H, HDMI_SEL = L, VCC = 3.3/3.6-V, VDD = 1.1/1.27-V, VSadj = 6.5-kΩ
IN_Dx: VID_PP = 1200-mV, 3.4-Gbps TMDS pattern
AUX: VI = 3.3-V, 100-kHz PRBS
I2C_EN/PIN = L, PRE_SEL = H, IN_EQ_CTL = H,
SDA_CTL/CLK_CTL = 0 V, SLEW_CTL = H		 250 300 mA
ICC1 VCC Supply current (TMDS 3.4-Gpbs retimer mode) OE = H, HDMI_SEL = L, VCC = 3.3/3.6-V, VDD = 1.1/1.27-V, VSadj = 6.5-kΩ
IN_Dx: VID_PP = 1200-mV, 3.4-Gbps TMDS pattern
AUX: VI = 3.3-V, 100-kHz PRBS
I2C_EN/PIN = L, PRE_SEL = H, IN_EQ_CTL = H,
SDA_CTL/CLK_CTL = 0 V, SLEW_CTL = H		 35 50 mA
IDD2 VDD Supply current (TMDS 3.4-Gpbs redriver mode) OE = H, HDMI_SEL = L, VCC = 3.3/3.6-V, VDD = 1.1/1.27-V, VSadj = 6.5-kΩ
IN_Dx: VID_PP = 1200-mV, 3.4-Gbps TMDS pattern
AUX: VI = 3.3-V, 100-kHz PRBS
I2C_EN/PIN = L, PRE_SEL = H, IN_EQ_CTL = H,
SDA_CTL/CLK_CTL = 0 V, SLEW_CTL = H		 170 200 mA
ICC2 VCC Supply current (TMDS 3.4-Gpbs redriver mode) OE = H, HDMI_SEL = L, VCC = 3.3/3.6-V, VDD = 1.1/1.27-V, VSadj = 6.5-kΩ
IN_Dx: VID_PP = 1200-mV, 3.4-Gbps TMDS pattern
AUX: VI = 3.3-V, 100-kHz PRBS
I2C_EN/PIN = L, PRE_SEL = H, IN_EQ_CTL = H,
SDA_CTL/CLK_CTL = 0 V, SLEW_CTL = H		 8 20 mA
ISD1 VDD Shutdown current OE = L, VCC = 3.3/3.6-V, VDD = 1.1/1.27-V, VSadj = 6.5-kΩ 3 10.5 mA
ISD1 VCC Shutdown current OE = L, VCC = 3.3/3.6-V, VDD = 1.1/1.27-V, VSadj = 6.5-kΩ 2 5 mA
(1) The typical rating is simulated at 3.3-V VCC and 1.1-V VDD and at 27°C temperature unless otherwise noted

7.6 Differential Input Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DR_RX_DATA Ddata lanes data rate 0.25 3.4 Gbps
DR_RX_CLK Clock lanes clock rate 25 340 MHz
tRX_DUTY Input clock duty circle 40% 50% 60%
tCLK_JIT Input clock jitter tolerance 0.3 Tbit
tDATA_JIT Input data jitter tolerance Test the TTP2, see Figure 10 150 ps
TRX_INTRA Input intra-pair skew tolerance Test at TTP2 when DR = 1.6-Gbps, see Figure 10 112 ps
TRX_INTER Input inter-pair skew tolerance 1.8 ns
EQH(D) Fixed EQ gain for data lane IN_D(0,1,2)n/p EQ_SEL/A0 = H; Fixed EQ gain,
test at 3.4-Gbps		 14 dB
EQL(D) Fixed EQ gain for data lane IN_D(0,1,2)n/p EQ_SEL/A0 = L; Fixed EQ gain,
test at 3.4-Gbps		 7.5 dB
EQZ(D) Adaptive EQ gain for data lane IN_D(0,1,2)n/p EQ_SEL/A0 = Z; adaptive EQ 2 14 dB
EQ(c) EQ gain for clock lane IN_CLKn/p EQ_SEL/A0 = H,L,NC 3
RINT Input differential termination impedance 80 100 120 Ω
VITERM Input termination voltage OE = H 0.7 V
VID_PP Input differential voltage (peak to peak) Tested at TTP2, check Figure 10 75 1200 mVPP

7.7 HDMI and DVI TMDS Output Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOH Single-ended high level output voltage Data rate ≤ 1.65 Gbps; PRE_SEL = NC; SLEW_CTL = H; OE = H; DR = 750 Mbps, VSadj = 7.06 kΩ VCC – 10 VCC + 10 mV
1.65 Gbps < Data rate ≤ 3.4 Gbps; PRE_SEL = NC; SLEW_CTL = H; OE = H; DR = 2.97 Gbps, VSadj = 7.06 kΩ VCC – 200 VCC + 10
VOL Single-ended low level output voltage Data rate ≤ 1.65 Gbps; PRE_SEL = NC; SLEW_CTL = H; OE = H; DR = 750 Mbps, VSadj = 6.5 kΩ VCC – 600 VCC – 400 mV
1.65-Gbps < Data rate ≤ 3.4-Gbps; PRE_SEL = NC; SLEW_CTL = H; OE = H; DR = 2.97-Gbps, VSadj = 6.5 kΩ VCC – 700 VCC – 400
VSWING_DA Single-ended output voltage swing on data lane PRE_SEL = NC; SLEW_CTL = H; OE = H; DR = 270-Mbs/2.97 VSadj = 6.5 kΩ 400 500 600 mV
VSWING_CLK Single-ended output voltage swing on clock lane Data rate ≤ 3.4-Gbps; PRE_SEL = NC; SLEW_CTL = H; OE = H; VSadj = 6.5 kΩ 400 500 600 mV
ΔVSWING Change in single-end output voltage swing per 100 Ω ΔVsadj 20 mV
ΔVOCM(SS) Change in steady state output common mode voltage between logic levels –5 5 mV
VOD(PP) Output differential voltage before pre-emphasis Vsadj = 7.06 kΩ; PRE_SEL = Z, See Figure 8 800 1200 mV
VOD(SS) Steady-state output differential voltage Vsadj = 7.06 kΩ; PRE_SEL = L, See Figure 9 600 1050 mV
ILEAK Failsafe condition leakage current VCC = 0 V; VDD = 0-V; output pulled to 3.3 V through 50-Ω resistors 45 µA
IOS Short circuit current limit Main link output shorted to GND 50 mA
RTERM Source termination resistance for HDMI 2.0 75 150 Ω

7.8 DDC, and I2C Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VI-DC SCL/SDA_SNK DC input voltage –0.3 5.6 V
SCL/SDA_CTL, SCL/SDA_SRC DC input voltage –0.3 3.6 V
VIL SCL/SDA_SNK, SCL/SDA_SRC Low level input voltage 0.3 xVCC V
SCL/SDA_CTL Low level input voltage 0.3 x VCC V
VIH SCL/SDA_SNK high level input voltage 3 V
SCL/SDA_SRC high level input voltage 0.7 x VCC V
SCL/SDA_CTL high level input voltage 0.7 x VCC V
VOL SCL/SDA_CTL, SCL/SDA_SRC low-level output voltage I0 = 3 mA and VCC > 2-V 0.4 V
I0 = 3 mA and VCC < 2-V 0.2 x VCC V
fSCL SCL clock frequency fast I2C mode for local I2C control 400 kHz
Cbus Total capacitive load for each bus line (DDC and local I2C pins) 400 pF

7.9 HPD Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIH High-level input voltage HPD_SNK 2.1 V
VIL Low-level input voltage HPD_SNK 0.8 V
VOH High-level output voltage IOH = –50 µA; HPD_SRC 2.4 3.6 V
VOL Low-level output voltage IOL = 500 µA; HPD_SRC 0 0.1 V
ILEAK Failsafe condition leakage current VCC = 0 V; VDD = 0 V; HPD_SNK = 5 V 40 μA
IH_HPD High-level input current Device powered; VIH = 5 V;
IH_HPD includes RpdHPD resistor current		 40 μA
IL_HPD Low-level input current Device powered; VIL = 0.8 V;
IL_HPD includes RpdHPD resistor current 		30
RpdHPD HPD input termination to GND VCC = 0 V 150 190 220 kΩ

7.10 HDMI and DVI Main Link Switching Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
REDRIVER MODE
DR Data rate (Automatic Mode) 250 1000 Mbps
DR Data rate (full redriver mode) 250 3400 Mbps
tPLH Propagation delay time (low to high) 250 600 ps
tPHL Propagation delay time (high to low) 250 800 ps
tT1 Transition time (rise and fall time); measured at 20% and 80% levels for data lanes. TMDS clock meets tT3 for all three times. SLEW_CTL = H; PRE_SEL = NC; OE = H; DR = 2.97 Gbps 75 ps
tT2 SLEW_CTL = L; PRE_SEL = NC; OE = H; DR = 2.97 Gbps 75
tT3 SLEW_CTL = NC; PRE_SEL = NC; OE = H; DR = 2.97 Gbps; CLK 297MHz 100
tSK1(T) Intra-pair output skew SLEW_CTL = NC; PRE_SEL = NC; OE = H; DR = 2.97 Gbps; 40 ps
tSK2(T) Inter-pair output skew SLEW_CTL = NC; PRE_SEL = NC; OE = H; DR = 2.97 Gbps; 100
tJITD1 Total output data jitter DR = 2.97 Gbps, HDMI_SEL/A1 = NC, EQ_SEL/A0 = NC; PRE_SEL = NC; SLEW_CTL = H OE = H.
See Figure 10 at TTP3		 0.2 Tbit
tJITC1 Total output clock jitter CLK = 297 MHz 0.25 Tbit
RETIMER MODE
dR Data rate (Full retimer mode) 0.25 3.4 Gbps
dR Data rate (Automatic mode) 1.0 3.4 Gbps
dXVR Automatic redriver to retimer crossover Measured with input signal applied from 0 to 200 mVpp .75 1.0 1.25 Gbps
fCROSSOVER Crossover frequency hysteresis 250 MHz
PLLBW Data retimer PLL bandwidth Default loop bandwidth setting .4 1 MHz
tACQ Input clock frequency detection and retimer acquisition time 180 μs
IJT1 Input clock jitter tolerance Tested when data rate > 1.0 Gbps 0.3 Tbit
tT1 Transition time (rise and fall time); measured at 20% and 80% levels for data lanes. TMDS clock meets tT3 for all three times. SLEW_CTL = H; PRE_SEL = NC; OE = H; DR = 3.4 Gbps 75 ps
tT2 SLEW_CTL = L; PRE_SEL = NC; OE = H; DR = 3.4 Gbps 75
tT3 SLEW_CTL = NC; PRE_SEL = NC; OE = H; DR = 3.4 Gbps; CLK = 297 MHz 100
tDCD OUT_CLK ± duty cycle 40% 50% 60%
tSK_INTER Inter-pair output skew Default setting for internal inter-pair skew adjust, HDMI_SEL/A1 = NC 0.2 Tch
tSK_INTRA 0.15 Tbit
tJITC1(1.4b) Total output clock jitter CLK = 297 MHz 0.25 Tbit

7.11 HPD Switching Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPD(HPD) Propagation delay from HPD_SNK to HPD_SRC; rising edge and falling edge See Figure 13; not valid during switching time 40 120 ns
tT(HPD) HPD logical disconnected timeout See Figure 14 2 ms

7.12 DDC and I2C Switching Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tr Rise time of both SDA and SCL signals Vcc = 3.3-V 300 ns
tf Fall time of both SDA and SCL signals 300 ns
tHIGH Pulse duration, SCL high 0.6 μs
tLOW Pulse duration, SCL low 1.3 μs
tSU1 Setup time, SDA to SCL 100 ns
tST, STA Setup time, SCL to start condition 0.6 μs
tHD,STA Hold time, start condition to SCL 0.6 μs
tST,STO Setup time, SCL to stop condition 0.6 μs
t(BUF) Bus free time between stop and start condition. 1.3 μs
tPLH1 Propagation delay time, low-to-high-level output Source-to-sink: 100-kbps pattern;
Cb(Sink) = 400-pF(1);
See Figure 17		 360 ns
tPHL1 Propagation delay time, high-to-low-level output 230 ns
tPLH2 Propagation delay time, low-to-high-level output Sink to Source: 100-kbps pattern;
Cb(Source) = 100-pF(1);
See Figure 18		 250 ns
tPHL2 Propagation delay time, high-to-low-level output 200 ns
(1) Cb = total capacitance of one bus line in pF.

7.13 Typical Characteristics

SN65DP149 SN75DP149 D001_SLLSEL2.gif
Figure 1. Current vs Data Rate in Retimer Mode
SN65DP149 SN75DP149 D003_SLLSEL2.gif
Figure 3. VOD vs Vsadj
SN65DP149 SN75DP149 D002_SLLSEL2.gif
Figure 2. Current vs Data Rate in Redriver Mode