ZHCSH06S April   1999  – November 2016 SN74LVC1G80

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  Timing Requirements: TA = -40°C to +85°C
    7. 6.7  Timing Requirements: TA = -40°C to +125°C
    8. 6.8  Switching Characteristics: TA = -40°C to +85°C, CL = 15 pF
    9. 6.9  Switching Characteristics: TA = -40°C to +85°C, CL = 30 pF or 50 pF
    10. 6.10 Switching Characteristics: TA = -40°C to +125°C, CL = 30 pF or 50 pF
    11. 6.11 Operating Characteristics
    12. 6.12 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Balanced High-Drive CMOS Push-Pull Outputs
      2. 8.3.2 Standard CMOS Inputs
      3. 8.3.3 Clamp Diodes
      4. 8.3.4 Partial Power Down (Ioff)
      5. 8.3.5 Over-Voltage Tolerant Inputs
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档
    2. 12.2 接收文档更新通知
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 Glossary
  13. 13机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DBV|5
  • DCK|5
  • YZP|5
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage –0.5 6.5 V
VI Input voltage(2) –0.5 6.5 V
VO Voltage applied to any output in the high-impedance or power-off state(2) –0.5 6.5 V
VO Voltage applied to any output in the high or low state(2)(3) –0.5 VCC + 0.5 V
IIK Input clamp current VI < 0 –50 mA
IOK Output clamp current VO < 0 –50 mA
IO Continuous output current ±50 mA
Continuous current through VCC or GND ±100 mA
TJ Junction temperature 150 °C
Tstg Storage temperature –65 150 ºC
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input negative-voltage and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(3) The value of VCC is provided in Recommended Operating Conditions.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
Machine model (MM) ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage Operating 1.65 5.5 V
Data retention only 1.5
VIH High-level input voltage VCC = 1.65 V to 1.95 V 0.65 × VCC V
VCC = 2.3 V to 2.7 V 1.7
VCC = 3 V to 3.6 V 2
VCC = 4.5 V to 5.5 V 0.7 × VCC
VIL Low-level input voltage VCC = 1.65 V to 1.95 V 0.35 × VCC V
VCC = 2.3 V to 2.7 V 0.7
VCC = 3 V to 3.6 V 0.8
VCC = 4.5 V to 5.5 V 0.3 × VCC
VI Input voltage 0 5.5 V
VO Output voltage 0 VCC V
IOH High-level output current VCC = 1.65 V –4 mA
VCC = 2.3 V –8
VCC = 3 V –16
–24
VCC = 4.5 V –32
IOL Low-level output current VCC = 1.65 V 4 mA
VCC = 2.3 V 8
VCC = 3 V 16
24
VCC = 4.5 V 32
Δt/Δv Input transition rise or fall rate VCC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V 20 ns/V
VCC = 3.3 V ± 0.3 V 10
VCC = 5 V ± 0.5 V 5
TJ Junction temperature 150 °C
TA Operating free-air temperature DBV and DCK packages –40 125 °C
YZP package –40 85
(1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. See the TI application report, Implications of Slow or Floating CMOS Inputs (SCBA004).

6.4 Thermal Information

THERMAL METRIC(1) SN74LVC1G80 UNIT
DBV (SOT-23) DCK (SC70) YZP (DSBGA)
5 PINS 5 PINS 5 PINS
RθJA Junction-to-ambient thermal resistance 243.4 278.9 136.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 179 121.3 1.3 °C/W
RθJB Junction-to-board thermal resistance 77.6 65.6 32.6 °C/W
ψJT Junction-to-top characterization parameter 58.4 7.5 6.3 °C/W
ψJB Junction-to-board characterization parameter 77 64.9 32.6 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP(1) MAX UNIT
VOH IOH = –100 µA 1.65 V to 5.5 V VCC – 0.1 V
IOH = –4 mA 1.65 V 1.2
IOH = –8 mA 2.3 V 1.9
IOH = –16 mA 3 V 2.4
IOH = –24 mA 2.3
IOH = –32 mA 4.5 V 3.8
VOL IOL = 100 µA 1.65 V to 5.5 V 0.1 V
IOL = 4 mA 1.65 V 0.45
IOL = 8 mA 2.3 V 0.3
IOL = 16 mA 3 V 0.4
IOL = 24 mA 0.55
IOL = 32 mA 4.5 V 0.55
II CLK or D inputs VI = 5.5 V or GND 0 to 5.5 V ±10 µA
Ioff VI or VO = 5.5 V 0 ±10 µA
ICC VI = 5.5 V or GND, IO = 0 1.65 V to 5.5 V 10 µA
ΔICC One input at VCC – 0.6 V,
Other inputs at VCC or GND		 3 V to 5.5 V 500 µA
Ci VI = VCC or GND TA = –40°C to 85°C 3.3 V 3.5 pF
(1) All typical values are at VCC = 3.3 V, TA = 25°C.

6.6 Timing Requirements: TA = –40°C to +85°C

over recommended operating free-air temperature range, TA = –40°C to +85°C (unless otherwise noted) (see Figure 3)
VCC MIN MAX UNIT
fclock Clock frequency VCC = 1.8 V ± 0.15 V 160 MHz
VCC = 2.5 V ± 0.2 V
VCC = 3.3 V ± 0.3 V
VCC = 5.5 V ± 0.5 V
tw Pulse duration, CLK high or low VCC = 1.8 V ± 0.15 V 2.5 ns
VCC = 2.5 V ± 0.2 V
VCC = 3.3 V ± 0.3 V
VCC = 5.5 V ± 0.5 V
tsu Setup time before CLK↑ Data high VCC = 1.8 V ± 0.15 V 2.3 ns
VCC = 2.5 V ± 0.2 V 1.5
VCC = 3.3 V ± 0.3 V 1.3
VCC = 5.5 V ± 0.5 V 1.1
Data low VCC = 1.8 V ± 0.15 V 2.5
VCC = 2.5 V ± 0.2 V 1.5
VCC = 3.3 V ± 0.3 V 1.3
VCC = 5.5 V ± 0.5 V 1.1
th Hold time, data after CLK↑ VCC = 1.8 V ± 0.15 V 0 ns
VCC = 2.5 V ± 0.2 V 0.2
VCC = 3.3 V ± 0.3 V 0.9
VCC = 5.5 V ± 0.5 V 0.4

6.7 Timing Requirements: TA = –40°C to +125°C

over recommended operating free-air temperature range, TA = –40°C to +125°C (unless otherwise noted) (see Figure 3)
VCC MIN MAX UNIT
fclock Clock frequency VCC = 1.8 V ± 0.15 V 160 MHz
VCC = 2.5 V ± 0.2 V
VCC = 3.3 V ± 0.3 V
VCC = 5.5 V ± 0.5 V
tw Pulse duration, CLK high or low VCC = 1.8 V ± 0.15 V 2.5 ns
VCC = 2.5 V ± 0.2 V
VCC = 3.3 V ± 0.3 V
VCC = 5.5 V ± 0.5 V
tsu Setup time before CLK↑ Data high VCC = 1.8 V ± 0.15 V 2.3 ns
VCC = 2.5 V ± 0.2 V 1.5
VCC = 3.3 V ± 0.3 V 1.3
VCC = 5.5 V ± 0.5 V 1.1
Data low VCC = 1.8 V ± 0.15 V 2.5
VCC = 2.5 V ± 0.2 V 1.5
VCC = 3.3 V ± 0.3 V 1.3
VCC = 5.5 V ± 0.5 V 1.1
th Hold time, data after CLK↑ VCC = 1.8 V ± 0.15 V 0 ns
VCC = 2.5 V ± 0.2 V 0.2
VCC = 3.3 V ± 0.3 V 0.9
VCC = 5.5 V ± 0.5 V 0.4

6.8 Switching Characteristics: TA = –40°C to +85°C, CL = 15 pF

over recommended operating free-air temperature range, TA = –40°C to +85°C, CL = 15 pF (unless otherwise noted) (see Figure 3)
PARAMETER FROM
(INPUT)		 TO
(OUTPUT)		 VCC MIN MAX UNIT
fmax VCC = 1.8 V ± 0.15 V 160 MHz
VCC = 2.5 V ± 0.2 V
VCC = 3.3 V ± 0.3 V
VCC = 5 V ± 0.5 V
tpd CLK Q VCC = 1.8 V ± 0.15 V 3 9.1 ns
VCC = 2.5 V ± 0.2 V 1.5 6
VCC = 3.3 V ± 0.3 V 1.3 4.2
VCC = 5 V ± 0.5 V 1.1 3.8

6.9 Switching Characteristics: TA = –40°C to +85°C, CL = 30 pF or 50 pF

over recommended operating free-air temperature range, TA = –40°C to +85°C, CL = 30 pF or 50 pF (unless otherwise noted) (see Figure 4)
PARAMETER FROM
(INPUT)		 TO
(OUTPUT)		 VCC MIN MAX UNIT
fmax VCC = 1.8 V ± 0.15 V 160 MHz
VCC = 2.5 V ± 0.2 V
VCC = 3.3 V ± 0.3 V
VCC = 5 V ± 0.5 V
tpd CLK Q VCC = 1.8 V ± 0.15 V 4.4 9.9 ns
VCC = 2.5 V ± 0.2 V 2.3 7
VCC = 3.3 V ± 0.3 V 2 5.2
VCC = 5 V ± 0.5 V 1.3 4.5

6.10 Switching Characteristics: TA = –40°C to +125°C, CL = 30 pF or 50 pF

over recommended operating free-air temperature range, TA = –40°C to +125°C, CL = 30 pF or 50 pF (unless otherwise noted) (see Figure 4)
PARAMETER FROM
(INPUT)		 TO
(OUTPUT)		 VCC MIN MAX UNIT
fmax VCC = 1.8 V ± 0.15 V 160 MHz
VCC = 2.5 V ± 0.2 V
VCC = 3.3 V ± 0.3 V
VCC = 5 V ± 0.5 V
tpd CLK Q VCC = 1.8 V ± 0.15 V 4.4 12.5 ns
VCC = 2.5 V ± 0.2 V 2.3 8.5
VCC = 3.3 V ± 0.3 V 2 6
VCC = 5 V ± 0.5 V 1.3 5.5

6.11 Operating Characteristics

TA = 25°C
PARAMETER TEST CONDITIONS VCC TYP UNIT
Cpd Power dissipation capacitance f = 10 MHz VCC = 1.8 V 24 pF
VCC = 2.5 V 24
VCC = 3.3 V 25
VCC = 5 V 27

6.12 Typical Characteristics

This plot shows the different ICC values for various voltages on the data input (D). Voltage sweep on the input is from 0 V to 6.5 V.
SN74LVC1G80 SCES885_ICCvsInputVoltage-1_8V-2_5V.gif
VCC = 1.8 V VCC = 2.5 V
Figure 1. Supply Current (ICC) vs Data (D) Input Voltage
SN74LVC1G80 SCES885_ICCvsInputVoltage-3_3V-5V.gif
VCC = 3.3 V VCC = 5 V
Figure 2. Supply Current (ICC) vs Data (D) Input Voltage