ZHCSO94D October   2003  – September 2021 SN74CB3Q3305

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 描述
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions (1)
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DCU|8
  • PW|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.3 Feature Description

The device supports High-Bandwidth data path up to 500 MHz. The I/O ports are 5 V tolerant when powered up or powered down due to IOFF. The charge pump creates low and flat ON-state resistance characteristics over the whole operating temperature range.

Switching input voltage beyond the supply is supported on data I/O ports: 0 V to 5 V with 3.3 V VCC or 0 V to 3.3 V with 2.5 V VCC.

The data flow is bidirectional with near-zero propagation delay. Reduced input/output capacitance for higher speed applications. OE can be toggled at the high speeds of 20 MHz for fast switching applications.