ZHCSIQ9A September 2018 – May 2025 OPA859
PRODUCTION DATA
请参考 PDF 数据表获取器件具体的封装图。
测试条件为:TA = 25°C、VS+ = 2.5V、VS– = –2.5V、VIN+ = 0V、增益 = 1V/V、RF = 0Ω、RL = 200Ω,并且输出负载以 1/2Vs 为基准(除非另有说明)

| VOUT = 100 mVPP |

| 增益 = 20V/V | RF = 453Ω |

| VOUT = 2 VPP |

| 微小信号响应 |



| VOUT = 2 VPP |

| VOUT = 2 VPP |

| 平均上升和下降时间 (10%–90%) = 450ps |


| 微小信号响应 |

| 2 个典型芯片 |

| 已测试 32 个芯片 |

| µ = –2.1µV/°C | σ = 2µV/°C | 已测试 32 个芯片 |

| VS = 5V |

| VS = 5V |

| VS = 5V |

| VS = 5V |

| µ= -0.38mV | σ = 0.97 mV | 已测试 9150 个芯片 |

| VOUT = 100 mVPP |

| VOUT = 100 mVPP |

| VOUT = 2 VPP |

| 微小信号响应 |

| 频率 10MHz |


| VOUT = 2 VPP |

| VOUT = 2 VPP |

| 压摆率:下降 = 1160V/μs、上升 = 1400V/μs |

| 增益= 5V/V、RF = 453Ω、2 × 输出过驱 |


| 微小信号响应 |

| VS = 5V | 2 个典型芯片 |

| 3 个典型芯片 |

| VS = 5V | 3 个典型芯片 |

| VS = 5V | 3 个典型芯片 |

| 3 个典型芯片 |

| VS = 5V |

| µ= 20.8mA | σ= 0.25mA | 已测试 9150 个芯片 |

| µ=–0.55pA | σ = 0.23pA | 已测试 9150 个芯片 |