SLVSKK4 March   2026 LMG3660R025

PRODUCT PREVIEW  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Switching Parameters
      1. 6.1.1 Turn-On Times
      2. 6.1.2 Turn-Off Times
      3. 6.1.3 Drain-Source Turn-On and Turn-off Slew Rate
      4. 6.1.4 Zero-Voltage Detection Times (LMG3666R025 only)
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
      1. 7.2.1 LMG3660R025 Functional Block Diagram
      2. 7.2.2 LMG3661R025 Functional Block Diagram
      3. 7.2.3 LMG3666R025 Functional Block Diagram
      4. 7.2.4 LMG3667R025 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Drive Strength Adjustment
      2. 7.3.2 GaN Power FET Switching Capability
      3. 7.3.3 VDD Supply
      4. 7.3.4 Overcurrent and Short-Circuit Protection
      5. 7.3.5 Overtemperature Protection
      6. 7.3.6 UVLO Protection
      7. 7.3.7 Fault Reporting
      8. 7.3.8 Auxiliary LDO (LMG3661R025 Only)
      9. 7.3.9 Zero-Voltage Detection (ZVD) (LMG3666R025 Only)
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Slew Rate Selection
        2. 8.2.2.2 Signal Level-Shifting
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 Using an Isolated Power Supply
      2. 8.3.2 Using a Bootstrap Diode
        1. 8.3.2.1 Diode Selection
        2. 8.3.2.2 Managing the Bootstrap Voltage
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
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请参考 PDF 数据表获取器件具体的封装图。

6.1.2 Turn-Off Times

The turn-off transition has two timing components: turn-off delay time and turn-off voltage rise time. The turn-off delay time is from when IN goes low to when the drain-source voltage rises to 20% of the bus voltage. The turn-off voltage rise time is from when the drain-source voltage rises from 20% of the bus voltage to when the drain-source voltage to 80% of the bus voltage. The turn-off timing components are dependent on the LHB load current, however LMG3666R025 and LMG3667R025 also includes the ability to limit turn-off drive strength. When the drain-to-source current is sufficiently high and the turn-off drive strength is limited, the timing components are dependent on the programming resistor RDRVoff connected to the ZVD pin or ZCD pin.