ZHCSQH3 November   2022 LMG3522R030

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. Parameter Measurement Information
    1. 7.1 Switching Parameters
      1. 7.1.1 Turn-On Times
      2. 7.1.2 Turn-Off Times
      3. 7.1.3 Drain-Source Turn-On Slew Rate
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  GaN FET Operation Definitions
      2. 8.3.2  Direct-Drive GaN Architecture
      3. 8.3.3  Drain-Source Voltage Capability
      4. 8.3.4  Internal Buck-Boost DC-DC Converter
      5. 8.3.5  VDD Bias Supply
      6. 8.3.6  Auxiliary LDO
      7. 8.3.7  Fault Detection
        1. 8.3.7.1 Overcurrent Protection and Short-Circuit Protection
        2. 8.3.7.2 Overtemperature Shutdown
        3. 8.3.7.3 UVLO Protection
        4. 8.3.7.4 Fault Reporting
      8. 8.3.8  Drive Strength Adjustment
      9. 8.3.9  Temperature-Sensing Output
      10. 8.3.10 Ideal-Diode Mode Operation
        1. 8.3.10.1 Overtemperature-Shutdown Ideal-Diode Mode
    4. 8.4 Start Up Sequence
    5. 8.5 Safe Operation Area (SOA)
      1. 8.5.1 Safe Operation Area (SOA) - Repetitive SOA
    6. 8.6 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Slew Rate Selection
          1. 9.2.2.1.1 Start-Up and Slew Rate With Bootstrap High-Side Supply
        2. 9.2.2.2 Signal Level-Shifting
        3. 9.2.2.3 Buck-Boost Converter Design
      3. 9.2.3 Application Curves
    3. 9.3 Do's and Don'ts
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Using an Isolated Power Supply
      2. 9.4.2 Using a Bootstrap Diode
        1. 9.4.2.1 Diode Selection
        2. 9.4.2.2 Managing the Bootstrap Voltage
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
        1. 9.5.1.1 Solder-Joint Reliability
        2. 9.5.1.2 Power-Loop Inductance
        3. 9.5.1.3 Signal-Ground Connection
        4. 9.5.1.4 Bypass Capacitors
        5. 9.5.1.5 Switch-Node Capacitance
        6. 9.5.1.6 Signal Integrity
        7. 9.5.1.7 High-Voltage Spacing
        8. 9.5.1.8 Thermal Recommendations
      2. 9.5.2 Layout Examples
  10. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Export Control Notice
    7. 10.7 术语表
  11. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Temperature-Sensing Output

The integrated driver senses the GaN die temperature and outputs the information through a modulated PWM signal on the TEMP pin. The typical PWM frequency is 9 kHz with the same refresh rate. The minimum PWM duty cycle is around 1%, which can be observed at temperature below 25°C. The target temperature range is from 25°C to 150°C, and the corresponding PWM duty cycle is typically from 3% to 82%. Following equation can be used to calculate the typical junction temperature TJ,typ in °C from the duty cycle DTEMP:

TJ,typ (°C) = 162.3 * DTEMP + 20.1

The tolerances of typical measurement are listed in Table 8-2.

Table 8-2 Typical Junction Temperature Measurement based on TEMP Signal and Tolerance
Typical TJ Measurement based on TEMP Signal (°C) 25 85 125
Tolerance (°C) ± 5 ± 6 ± 10

At temperatures above 150°C, the duty cycle continues to increase linearly until overtemperature fault happens. When overtemperature happens, the TEMP pin is pulled high to indicate this fault until the temperature is reduced to the normal range. There is a hysteresis to clear overtemperature fault.