ZHCSLG2B September   2021  – August 2022 LM74722-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Dual Gate Control (GATE, PD)
        1. 8.3.1.1 Reverse Battery Protection (A, C, GATE)
        2. 8.3.1.2 Load Disconnect Switch Control (PD)
        3. 8.3.1.3 Overvoltage Protection and Battery Voltage Sensing (VSNS, SW, OV)
      2. 8.3.2 Boost Regulator
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical 12-V Reverse Battery Protection Application
      1. 9.2.1 Design Requirements for 12-V Battery Protection
        1. 9.2.1.1 Automotive Reverse Battery Protection
          1. 9.2.1.1.1 Input Transient Protection: ISO 7637-2 Pulse 1
          2. 9.2.1.1.2 AC Super Imposed Input Rectification: ISO 16750-2 and LV124 E-06
          3. 9.2.1.1.3 Input Micro-Short Protection: LV124 E-10
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Design Considerations
        2. 9.2.2.2 Boost Converter Components (C2, C3, L1)
        3. 9.2.2.3 Input and Output Capacitance
        4. 9.2.2.4 Hold-Up Capacitance
        5. 9.2.2.5 Overvoltage Protection and Battery Monitor
        6. 9.2.2.6 MOSFET Selection: Blocking MOSFET Q1
        7. 9.2.2.7 MOSFET Selection: Load Disconnect MOSFET Q2
        8. 9.2.2.8 TVS Selection
      3. 9.2.3 Application Curves
    3. 9.3 What to Do and What Not to Do
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
    2. 10.2 TVS Selection for 12-V Battery Systems
    3. 10.3 TVS Selection for 24-V Battery Systems
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 接收文档更新通知
    2. 12.2 支持资源
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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9.1 Application Information

LM74722-Q1 controls two N-channel power MOSFETs with GATE used to control diode MOSFET to emulate an ideal diode and PD controlling second MOSFET for power path cutoff when disabled or during an overvoltage protection and provide inrush current limiting. IQ during operation (EN = High) is < 38 µA and < 3.5 µA during shutdown mode (EN = Low). LM74722-Q1 can be placed into low quiescent current mode using EN = low, where both GATE and PD are turned OFF.