ZHCSGX1G May   2004  – February 2025 LM60

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Device Comparison
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 LM60 Transfer Function
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Capacitive Loads
    2. 8.2 Typical Applications
      1. 8.2.1 Full-Range Centigrade Temperature Sensor
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Centigrade Thermostat Application
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curve
    3. 8.3 System Examples
      1. 8.3.1 Conserving Power Dissipation With Shutdown
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
      3. 8.5.3 Thermal Considerations
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 术语表
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

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Electrical Characteristics

Unless otherwise noted, these specifications apply for +VS = 3V (DC) and ILOAD = 1μA. All limits TA = TJ = 25°C unless otherwise noted.
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
SENSOR ACCURACY
TACY Temperature accuracy(3) LM60B(4) -2 2 °C
TA = TJ = TMIN to TMAX -3 3
LM60C -3 3
TA = TJ = TMIN to TMAX -4 4
SENSOR OUTPUT
V0°C Output voltage offset at 0°C 424 mV
TC Temperature coefficient (sensor gain) 6.25
mV/°C


LM60B TA = TJ = TMIN to TMAX 6.06 6.44
LM60C TA = TJ = TMIN to TMAX 6 6.5
VONL Output Nonlinearity(5) LM60B TA = TJ = TMIN to TMAX -0.6 0.6 °C
LM60C TA = TJ = TMIN to TMAX -0.8 0.8
ZOUT Output impedance 800
TLTD Long-term stability and drift(6) TJ = TMAX = 125°C for 1000 hours ±0.2 °C
POWER SUPPLY
IDD Operating current LM60, 2.7V ≤ +VS ≤ 10V Legacy chip 82 110 μA
New chip 52 70
TA = TJ = TMIN to TMAX
Legacy chip
125
TA = TJ = TMIN to TMAX
New chip
90
PSR Line regulation(7) LM60, 2.7V ≤ +VS ≤ 3.3V TA = TJ = TMIN to TMAX -2.3 2.3 mV
LM60, 3V ≤ +VS ≤ 10V TA = TJ = TMIN to TMAX -0.3 0.3 mV/V
ΔIDD Change of quiescent current LM60, 2.7V ≤ +VS ≤ 10V Legacy chip ±5 μA
New chip ±6.5
IDD_TEMP
Temperature coefficient of quiescent current

0.2 μA/°C
Limits are specified to TI's AOQL (Average Outgoing Quality Level).
Typicals are at TJ = TA = 25°C and represent most likely parametric norm.
Accuracy is defined as the error between the output voltage and 6.25mV/°C times the case temperature of the device plus 424mV, at specified conditions of voltage, current, and temperature (expressed in °C).
LM60B (Legacy chip) operates down to –40°C without damage but the accuracy is only verified from –25°C to 125°C. However, LM60B (New chip) specs are verified from –40°C to 125°C.
Nonlinearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line, over the rated temperature rating of the device
For best long-term stability, any precision circuit provides the best results if the unit is aged at a warm temperature, temperature cycled for at least 46 hours before long-term life test begins for both temperatures. This is especially true when a small (surface-mount) part is wave soldered; allow time for stress relaxation to occur. The majority of the drift will occur in the first 1000 hours at elevated temperatures. The drift after 1000 hours will not continue at the first 1000 hour rate.
Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating effects can be computed by multiplying the internal dissipation by the thermal resistance